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Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO.
- Published in:
- Journal of Electronic Materials, 2014, v. 43, n. 5, p. 1384, doi. 10.1007/s11664-014-3083-8
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- Article
Machine Learning-Guided Prediction of Antigen-Reactive In Silico Clonotypes Based on Changes in Clonal Abundance through Bio-Panning.
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- Biomolecules (2218-273X), 2020, v. 10, n. 3, p. 421, doi. 10.3390/biom10030421
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- Article
A Study on Establishing Infrastructure for Research Cooperation in the Tropical Pacific.
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- Ocean & Polar Research, 2013, v. 35, n. 4, p. 351, doi. 10.4217/OPR.2013.35.4.351
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- Article
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta<sub>2</sub>O<sub>5?x</sub>/TaO<sub>2?x</sub> bilayer structures.
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- Nature Materials, 2011, v. 10, n. 8, p. 625, doi. 10.1038/nmat3070
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- Article
Self-Limited Switching in Ta<sub>2</sub>O<sub>5</sub>/TaO <sub>x</sub> Memristors Exhibiting Uniform Multilevel Changes in Resistance.
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- Advanced Functional Materials, 2015, v. 25, n. 10, p. 1527, doi. 10.1002/adfm.201403621
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- Article