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Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe<sub>2</sub>/MoS<sub>2</sub> Heterostructure for Ambipolar Field-Effect Transistors.
- Published in:
- Advanced Materials, 2016, v. 28, n. 43, p. 9519, doi. 10.1002/adma.201601949
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- Article