XANES Investigations on Electronic Structure and Magnetic Properties of GaFeO<sub>3</sub> Nanocrystals.
- Published in:
- Journal of Electronic Materials, 2022, v. 51, n. 8, p. 4133, doi. 10.1007/s11664-022-09722-4
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- Publication type:
- Article
Works by Lee, Byeong‐Hyeon
Results: 12
1
2
Structural, Surface, and Electronic Structure Properties of Ag<sup>−</sup> Ion-Implanted SrVO<sub>3</sub> Thin Films.
- Published in:
- Journal of Electronic Materials, 2022, v. 51, n. 5, p. 1900, doi. 10.1007/s11664-022-09454-5
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- Publication type:
- Article
3
Thin Film Logic Circuits with Amorphous SiInZnO Channel Layer Annealed at Different Atmospheres for Next‐Generation Integrated Circuits.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 12, p. 1, doi. 10.1002/pssa.201700732
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- Publication type:
- Article
4
Influence of Channel Layer Thickness on the Instability of Amorphous SiZnSnO Thin Film Transistors Under Negative Bias Temperature Stress.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 12, p. 1, doi. 10.1002/pssa.201700698
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- Publication type:
- Article
5
Investigation on energy bandgap states of amorphous SiZnSnO thin films.
- Published in:
- Scientific Reports, 2019, v. 9, n. 1, p. 1, doi. 10.1038/s41598-019-55807-2
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- Publication type:
- Article
6
Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor.
- Published in:
- Scientific Reports, 2019, v. 9, n. 1, p. 1, doi. 10.1038/s41598-018-37530-6
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- Publication type:
- Article
7
Phase‐Controlled Artificial SiZnSnO/P(VDF‐TrFE) Synaptic Devices with a High Dynamic Range for Neuromorphic Computing.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200810
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- Publication type:
- Article
8
Perovskite Lanthanum‐Doped Barium Stannate: A Refractory Near‐Zero‐Index Material for High‐Temperature Energy Harvesting Systems.
- Published in:
- Advanced Science, 2024, v. 11, n. 2, p. 1, doi. 10.1002/advs.202302410
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- Publication type:
- Article
9
Controlling of lattice strains for crack-free and strong ferroelectric barium titanate films by post-thermal treatment.
- Published in:
- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-09182-0
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- Publication type:
- Article
10
Characteristics and Electronic Band Alignment of a Transparent p -CuI/ n -SiZnSnO Heterojunction Diode with a High Rectification Ratio.
- Published in:
- Nanomaterials (2079-4991), 2021, v. 11, n. 5, p. 1237, doi. 10.3390/nano11051237
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- Publication type:
- Article
11
Recent Advancements in 2D Material-Based Memristor Technology Toward Neuromorphic Computing.
- Published in:
- Micromachines, 2024, v. 15, n. 12, p. 1451, doi. 10.3390/mi15121451
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- Publication type:
- Article
12
Video-Based Group-Values Affirmation Reduces Defensive Responses to Risk Messages.
- Published in:
- Science Communication, 2025, v. 47, n. 1, p. 109, doi. 10.1177/10755470241269862
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- Publication type:
- Article