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54 Gbit/s OOK transmission using singlemode VCSEL up to 2.2 km MMF.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 8, p. 633, doi. 10.1049/el.2015.4264
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- Article
A Design and New Functionality of Antiwaveguiding Vertical-Cavity Surface-Emitting Lasers for a Wavelength of 850 nm.
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- Technical Physics Letters, 2018, v. 44, n. 1, p. 36, doi. 10.1134/S1063785018010078
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- Article
Serial data transmission at 224 Gbit/s applying directly modulated 850 and 910 nm VCSELs.
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- Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 19, p. 735, doi. 10.1049/ell2.12236
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- Article
25.78 Gbit/s data transmission over 2 km multi-mode-fibre with 850 and 910 nm single-mode VCSELs and a commercial quad small form-factor pluggable transceiver.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 12, p. 774, doi. 10.1049/el.2018.0720
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- Article
25.78 Gbit/s data transmission over 2 km multi‐mode‐fibre with 850 and 910 nm single‐mode VCSELs and a commercial quad small form‐factor pluggable transceiver.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 12, p. 774, doi. 10.1049/el.2018.0720
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- Article
INVESTIGATIONS OF InGaN/GaN AND InGaN/InGaN QDS GROWN IN A WIDE PRESSURE MOCVD REACTOR.
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- International Journal of Nanoscience, 2007, v. 6, n. 5, p. 327, doi. 10.1142/S0219581X07004882
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- Article
VARIABLE-ANGLE OPTICAL REFLECTIVITY AND ANGLE-RESOLVED PHOTOLUMINESCENCE STUDIES OF 2D ACTIVE PHOTONIC CRYSTAL BASED ON QUANTUM DOTS.
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- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 197, doi. 10.1142/S0219581X07004572
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- Article
HIGH TEMPERATURE STABILITY OF OPTICAL PROPERTIES OF InAs QUANTUM DOTS REALIZED BY CONTROLLING OF QUANTUM DOTS ELECTRONIC SPECTRUM.
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- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 283, doi. 10.1142/S0219581X07004742
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- Article
54 Gbit/s OOK transmission using single‐mode VCSEL up to 2.2 km MMF.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 7, p. 633, doi. 10.1049/el.2015.4264
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- Publication type:
- Article
Temperature characteristics of tilted wave lasers.
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- Optical Engineering, 2016, v. 55, n. 11, p. 116102-1, doi. 10.1117/1.OE.55.11.116102
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- Article
Novel concepts for injection lasers.
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- Optical Engineering, 2002, v. 41, n. 12, p. 3193, doi. 10.1117/1.1518677
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- Article
Applications of Quantum Dots in Semiconductor Lasers.
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- International Journal of High Speed Electronics & Systems, 2002, v. 12, n. 1, p. 177, doi. 10.1142/S0129156402001150
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- Article
Whispering Gallery Modes and Spontaneous Emission in Compact VCSEL Structures.
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- Semiconductors, 2019, v. 53, n. 14, p. 1880, doi. 10.1134/S1063782619140185
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- Article
Spontaneous Emission in the Anti-Waveguiding VCSEL.
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- Semiconductors, 2019, v. 53, n. 14, p. 1876, doi. 10.1134/S1063782619140173
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- Article
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm).
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- Semiconductors, 2019, v. 53, n. 12, p. 1699, doi. 10.1134/S1063782619160218
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- Article
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells.
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- Semiconductors, 2018, v. 52, n. 1, p. 93, doi. 10.1134/S1063782618010062
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- Publication type:
- Article
Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission.
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- Semiconductors, 2014, v. 48, n. 1, p. 77, doi. 10.1134/S1063782614010072
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- Article
Efficient electro-optic semiconductor medium based on type-II heterostructures.
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- Semiconductors, 2013, v. 47, n. 11, p. 1528, doi. 10.1134/S1063782613110201
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- Article
Optical anisotropy of InGaAs quantum dots.
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- Semiconductors, 2013, v. 47, n. 1, p. 85, doi. 10.1134/S1063782613010077
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- Article
Effect of AlGaAs-(AlGa)O pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots.
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- Semiconductors, 2011, v. 45, n. 7, p. 962, doi. 10.1134/S1063782611070116
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- Article
Matrices of 960-nm vertical-cavity surface-emitting lasers.
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- Semiconductors, 2011, v. 45, n. 6, p. 818, doi. 10.1134/S1063782611060133
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- Article
Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions.
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- Semiconductors, 2011, v. 45, n. 5, p. 679, doi. 10.1134/S1063782611050216
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- Article
A temperature-stable semiconductor laser based on coupled waveguides.
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- Semiconductors, 2011, v. 45, n. 4, p. 550, doi. 10.1134/S1063782611040208
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- Article
Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots.
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- Semiconductors, 2010, v. 44, n. 10, p. 1308, doi. 10.1134/S106378261010012X
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- Article
Structural and optical properties of InAlN/GaN distributed Bragg reflectors.
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- Semiconductors, 2010, v. 44, n. 7, p. 949, doi. 10.1134/S1063782610070201
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- Article
Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K).
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- Semiconductors, 2009, v. 43, n. 5, p. 680, doi. 10.1134/S1063782609050261
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- Article
AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs.
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- Semiconductors, 2009, v. 43, n. 4, p. 514, doi. 10.1134/S1063782609040204
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- Article
Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots.
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- Semiconductors, 2008, v. 42, n. 10, p. 1228, doi. 10.1134/S1063782608100151
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- Article
Energy characteristics of excitons in structures based on InGaN alloys.
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- Semiconductors, 2008, v. 42, n. 6, p. 720, doi. 10.1134/S1063782608060146
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- Article
Photoluminescence of localized excitons in InGan quantum dots.
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- Semiconductors, 2008, v. 42, n. 2, p. 188, doi. 10.1134/S1063782608020115
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- Article
The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots.
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- Semiconductors, 2007, v. 41, n. 10, p. 1224, doi. 10.1134/S1063782607100181
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- Article
Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots.
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- Semiconductors, 2007, v. 41, n. 5, p. 575, doi. 10.1134/S1063782607050193
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- Article
Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs.
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- Semiconductors, 2006, v. 40, n. 10, p. 1232, doi. 10.1134/S1063782606100198
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- Article
Room-temperature 1.3-μm lasing in a microdisk with quantum dots.
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- Semiconductors, 2006, v. 40, n. 9, p. 1101, doi. 10.1134/S106378260609020X
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- Article
The study of lateral carrier transport in structures with InGaN quantum dots in the active region.
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- Semiconductors, 2006, v. 40, n. 5, p. 574, doi. 10.1134/S1063782606050113
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- Article
VCSELs based on arrays of sub-monolayer InGaAs quantum dots.
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- Semiconductors, 2006, v. 40, n. 5, p. 615, doi. 10.1134/S1063782606050186
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- Article
Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation.
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- Semiconductors, 2006, v. 40, n. 4, p. 476, doi. 10.1134/S1063782606040191
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- Article
Continuous-wave Lasing of Single-Mode Metamorphic Quantum Dot Lasers for the 1.5-μm Spectral Region.
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- Semiconductors, 2005, v. 39, n. 12, p. 1415, doi. 10.1134/1.2140316
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- Article
Studies of the Electron Spectrum in Structures with InGaN Quantum Dots Using Photocurrent Spectroscopy.
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- Semiconductors, 2005, v. 39, n. 11, p. 1304, doi. 10.1134/1.2128455
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- Article
Nonequilibrium Room-Temperature Carrier Distribution in InAs Quantum Dots Overgrown with Thin AlAs/InAlAs Layers.
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- Semiconductors, 2005, v. 39, n. 10, p. 1188, doi. 10.1134/1.2085268
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- Article
Stresses in Selectively Oxidized GaAs/(AlGa)<sub>x</sub>O<sub>y</sub> Structures.
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- Semiconductors, 2005, v. 39, n. 7, p. 748, doi. 10.1134/1.1992627
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- Article
The Optical Properties of Heterostructures with Quantum-Confined InGaAsN Layers on a GaAs Substrate and Emitting at 1.3–1.55μm.
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- Semiconductors, 2005, v. 39, n. 6, p. 703, doi. 10.1134/1.1944862
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- Article
Effect of p-Doping of the Active Region on the Temperature Stability of InAs/GaAs QD Lasers.
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- Semiconductors, 2005, v. 39, n. 4, p. 477, doi. 10.1134/1.1900266
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- Article
A Study of Carrier Statistics in InGaN/GaN LED Structures.
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- Semiconductors, 2005, v. 39, n. 4, p. 467, doi. 10.1134/1.1900264
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- Article
Kinetics and Inhomogeneous Carrier Injection in InGaN Nanolayers.
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- Semiconductors, 2005, v. 39, n. 2, p. 249, doi. 10.1134/1.1864208
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- Article
Special Features of Structural Interaction in (AlGaIn)N/GaN Heterostructures Used as Dislocation Filters.
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- Semiconductors, 2005, v. 39, n. 1, p. 100, doi. 10.1134/1.1852655
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- Article
MOCVD-Grown AlGaN/GaN Heterostructures with High Electron Mobility.
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- Semiconductors, 2004, v. 38, n. 11, p. 1323, doi. 10.1134/1.1823068
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- Article
Effect of Nonradiative Recombination Centers on Photoluminescence Efficiency in Quantum Dot Structures.
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- Semiconductors, 2004, v. 38, n. 10, p. 1207, doi. 10.1134/1.1808830
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- Article
Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy.
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- Semiconductors, 2004, v. 38, n. 3, p. 340, doi. 10.1134/1.1682340
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- Article
Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates.
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- Semiconductors, 2003, v. 37, n. 12, p. 1411, doi. 10.1134/1.1634663
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- Article