Works matching AU Lebedev, A.

Results: 3318

Negative magnetoresistance in SiC heteropolytype junctions.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 793, doi. 10.1007/s10854-007-9417-z

By:

Lebedev, Alexander Alexandrovich;
Abramov, P. L.;
Agrinskaya, N. V.;
Kozub, V. I.;
Kuznetsov, A. N.;
Lebedev, S. P.;
Oganesyan, G. A.;
Sorokin, L. M.;
Chernyaev, A. V.;
Shamshur, D. V.

Publication type:

Article

SiC/graphene-Based Test Structures for the Kelvin Probe Microscopy Instrumental Function Determination.

Published in:

Technical Physics Letters, 2023, v. 49, n. 12, p. 238, doi. 10.1134/S1063785023900133

By:

Dunaevskiy, M. S.;
Gushchina, E. V.;
Malykh, D. A.;
Lebedev, S. P.;
Lebedev, A. A.

Publication type:

Article

Small-angle neutron scattering study of radiation-induced defects in synthetic quartz.

Published in:

Crystallography Reports, 2006, v. 51, p. S16, doi. 10.1134/S1063774506070042

By:

Lebedev, V. M.;
Lebedev, V. T.;
Orlov, S. P.;
Pevzner, B. Z.;
Tolstikhin, I. N.

Publication type:

Article

A CLINICAL CASE OF DIFFUSE TOXIC GOITER WITH ENDOCRINE OPHTHALMOPATHY AND MANIFESTATIONS IN THE DENTAL SYSTEM IN A 15-YEAR-OLD CHILD.

Published in:

Georgian Medical News, 2024, v. 350, n. 5, p. 110

By:

Boldyreva, Yu. V.;
Lebedev, I. A.;
Zakharchuk, E. V.;
Lebedev, S. N.;
Zubareva, A. S.

Publication type:

Article

PRO-INFLAMMATORY EFFECTS OF EXPERIMENTAL HYPERTHYROIDISM IN COLON OF MICE (IMMUNOHISTOCYTOCHEMICAL STUDY).

Published in:

Georgian Medical News, 2019, v. 292-293, n. 7-8, p. 81

By:

Bagaturiya, G.;
Kurbanov, R.;
Lebedev, A.;
Gadzhimagomedova, N.;
Lebedev, V.;
Golenishcheva, V.;
Glushakov, R.

Publication type:

Article

Channel routing based on ant colony adaptive behavior model.

Published in:

Journal of Computer & Systems Sciences International, 2015, v. 54, n. 2, p. 278, doi. 10.1134/S1064230715020094

By:

Kureichik, V.;
Lebedev, B.;
Lebedev, O.

Publication type:

Article

VLSI floorplanning based on the integration of adaptive search models.

Published in:

Journal of Computer & Systems Sciences International, 2013, v. 52, n. 1, p. 80, doi. 10.1134/S1064230712060056

By:

Kureichik, V.;
Lebedev, B.;
Lebedev, V.

Publication type:

Article

A simulated evolution-based solution of the cover problem.

Published in:

Journal of Computer & Systems Sciences International, 2009, v. 48, n. 1, p. 95, doi. 10.1134/S1064230709010092

By:

Kureichik, V.;
Lebedev, B.;
Lebedev, O.

Publication type:

Article

A simulated evolution-based solution of the placement problem.

Published in:

Journal of Computer & Systems Sciences International, 2007, v. 46, n. 4, p. 578, doi. 10.1134/S1064230707040089

By:

Kureichik, V.;
Lebedev, B.;
Lebedev, O.

Publication type:

Article

Raman Studies of Graphene Films Grown on 4H-SiC Subjected to Deposition of Ni.

Published in:

Semiconductors, 2020, v. 54, n. 12, p. 1674, doi. 10.1134/S1063782620120064

By:

Eliseyev, I. A.;
Davydov, V. Yu.;
Smirnov, A. N.;
Belov, S. V.;
Zubov, A. V.;
Lebedev, S. P.;
Lebedev, A. A.

Publication type:

Article

Comparative Study of Conventional and Quasi-Freestanding Epitaxial Graphenes Grown on 4H-SiC Substrate.

Published in:

Semiconductors, 2020, v. 54, n. 12, p. 1657, doi. 10.1134/S1063782620120179

By:

Lebedev, S. P.;
Eliseyev, I. A.;
Panteleev, V. N.;
Dementev, P. A.;
Shnitov, V. V.;
Rabchinskii, M. K.;
Smirnov, D. A.;
Zubov, A. V.;
Lebedev, A. A.

Publication type:

Article

Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1904, doi. 10.1134/S1063782619140057

By:

Eliseyev, I. A.;
Davydov, V. Yu.;
Smirnov, A. N.;
Nestoklon, M. O.;
Dementev, P. A.;
Lebedev, S. P.;
Lebedev, A. A.;
Zubov, A. V.;
Mathew, S.;
Pezoldt, J.;
Bokai, K. A.;
Usachov, D. Yu.

Publication type:

Article

High Quality Graphene Grown by Sublimation on 4H-SiC (0001).

Published in:

Semiconductors, 2018, v. 52, n. 14, p. 1882, doi. 10.1134/S1063782618140154

By:

Lebedev, A. A.;
Davydov, V. Yu.;
Usachov, D. Yu.;
Lebedev, S. P.;
Smirnov, A. N.;
Eliseyev, I. A.;
Dunaevskiy, M. S.;
Gushchina, E. V.;
Bokai, K. A.;
Pezoldt, J.

Publication type:

Article

Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1616, doi. 10.1134/S1063782618120023

By:

Agrinskaya, N. V.;
Lebedev, A. A.;
Lebedev, S. P.;
Shakhov, M. A.;
Lahderanta, E.

Publication type:

Article

Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1611, doi. 10.1134/S1063782618120047

By:

Alekseev, P. A.;
Dunaevskiy, M. S.;
Mikhailov, A. O.;
Lebedev, S. P.;
Lebedev, A. A.;
Ilkiv, I. V.;
Khrebtov, A. I.;
Bouravleuv, A. D.;
Cirlin, G. E.

Publication type:

Article

MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1428, doi. 10.1134/S1063782618110210

By:

Reznik, R. R.;
Kotlyar, K. P.;
Ilkiv, I. V.;
Soshnikov, I. P.;
Lebedev, S. P.;
Lebedev, A. A.;
Kirilenko, D. A.;
Alexeev, P. A.;
Cirlin, G. E.

Publication type:

Article

Effects of irradiation with 8-MeV protons on n-3 C-SiC heteroepitaxial layers.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1044, doi. 10.1134/S1063782617080218

By:

Lebedev, A.;
Ber, B.;
Oganesyan, G.;
Belov, S.;
Lebedev, S.;
Nikitina, I.;
Seredova, N.;
Shakhov, L.;
Kozlovski, V.

Publication type:

Article

Study of the crystal and electronic structure of graphene films grown on 6 H-SiC (0001).

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1072, doi. 10.1134/S1063782617080073

By:

Davydov, V.;
Usachov, D.;
Lebedev, S.;
Smirnov, A.;
Levitskii, V.;
Eliseyev, I.;
Alekseev, P.;
Dunaevskiy, M.;
Vilkov, O.;
Rybkin, A.;
Lebedev, A.

Publication type:

Article

Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6 H-SiC (000 $$\bar 1$$) in vacuum.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 951, doi. 10.1134/S1063782616070083

By:

Kotousova, I.;
Lebedev, S.;
Lebedev, A.

Publication type:

Article

On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum.

Published in:

Semiconductors, 2014, v. 48, n. 3, p. 350, doi. 10.1134/S106378261403018X

By:

Mynbaeva, M.;
Lebedev, S.;
Lavrent'ev, A.;
Mynbaev, K.;
Golovatenko, A.;
Lebedev, A.;
Nikolaev, V.

Publication type:

Article

Investigation of the transition layer in 3 C-SiC/6 H-SiC heterostructures.

Published in:

Semiconductors, 2013, v. 47, n. 11, p. 1539, doi. 10.1134/S1063782613110134

By:

Lebedev, A.;
Zamorianskaya, M.;
Davydov, S.;
Kirilenko, D.;
Lebedev, S.;
Sorokin, L.;
Shustov, D.;
Scheglov, M.

Publication type:

Article

Comparative study of 3<i>C</i>-SiC layers sublimation-grown on a 6<i>H</i>-SiC substrate.

Published in:

Semiconductors, 2013, v. 47, n. 9, p. 1267, doi. 10.1134/S1063782613090236

By:

Shustov, D. B.;
Lebedev, A. A.;
Lebedev, S. P.;
Nelson, D. K.;
Sitnikova, A. A.;
Zamoryanskaya, M. V.

Publication type:

Article

Structure and transport properties of nanocarbon films prepared by sublimation on a 6 H-SiC surface.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 301, doi. 10.1134/S1063782613020024

By:

Agrinskaya, N.;
Berezovets, V.;
Kozub, V.;
Kotousova, I.;
Lebedev, A.;
Lebedev, S.;
Sitnikova, A.

Publication type:

Article

Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 623, doi. 10.1134/S1063782611050186

By:

Lebedev, A.;
Agrinskaya, N.;
Lebedev, S.;
Mynbaeva, M.;
Petrov, V.;
Smirnov, A.;
Strel'chuk, A.;
Titkov, A.;
Shamshur, D.

Publication type:

Article

Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1389, doi. 10.1134/S106378261010026X

By:

Lebedev, A. A.;
Strel'chuk, A. M.;
Shamshur, D. V.;
Oganesyan, G. A.;
Lebedev, S. P.;
Mynbaeva, M. G.;
Sadokhin, A. V.

Publication type:

Article

Study of the 3 C-SiC layers grown on the 15 R-SiC substrates.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 756, doi. 10.1134/S106378260906013X

By:

Lebedev, A. A.;
Abramov, P. L.;
Bogdanova, E. V.;
Zubrilov, A. S.;
Lebedev, S. P.;
Nelson, D. K.;
Seredova, N. V.;
Smirnov, A. N.;
Tregubova, A. S.

Publication type:

Article

Metal-insulator transition in n-3 C-SiC epitaxial films.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 318, doi. 10.1134/S1063782609030117

By:

Lebedev, A. A.;
Abramov, P. L.;
Agrinskaya, N. V.;
Kozub, V. I.;
Kuznetsov, A. N.;
Lebedev, S. P.;
Oganesyan, G. A.;
Tregubova, A. S.;
Chernyaev, A. V.;
Shamshur, D. V.;
Skvortsova, M. O.

Publication type:

Article

A study of thick 3 C-SiC epitaxial layers grown on 6 H-SiC substrates by sublimation epitaxy in vacuum.

Published in:

Semiconductors, 2007, v. 41, n. 3, p. 263, doi. 10.1134/S1063782607030037

By:

Lebedev, A. A.;
Zelenin, V. V.;
Abramov, P. L.;
Bogdanova, E. V.;
Lebedev, S. P.;
Nel'son, D. K.;
Razbirin, B. S.;
Shcheglov, M. P.;
Tregubova, A. S.;
Suvajarvi, M.;
Yakimova, R.

Publication type:

Article

The Temperature Distribution Simulation in the Graphene Sublimation Growth Zone on SiC Substrate.

Published in:

Technical Physics, 2023, v. 68, n. 12, p. 648, doi. 10.1134/S1063784223080169

By:

Lebedev, S. P.;
Priobrazhenskii, S. Iu.;
Plotnikov, A. V.;
Mynbaeva, M. G.;
Lebedev, A. A.

Publication type:

Article

Investigation of the Hydrogen Etching Effect of the SiC Surface on the Formation of Graphene Films.

Published in:

Technical Physics, 2019, v. 64, n. 12, p. 1843, doi. 10.1134/S1063784219120144

By:

Lebedev, S. P.;
Barash, I. S.;
Eliseyev, I. A.;
Dementev, P. A.;
Lebedev, A. A.;
Bulat, P. V.

Publication type:

Article

Supersensitive graphene-based gas sensor.

Published in:

Technical Physics, 2016, v. 61, n. 3, p. 453, doi. 10.1134/S1063784216030130

By:

Lebedev, A.;
Lebedev, S.;
Novikov, S.;
Davydov, V.;
Smirnov, A.;
Litvin, D.;
Makarov, Yu.;
Levitskii, V.

Publication type:

Article

Feasibility study of the grinding process of grain materials.

Published in:

Agronomy Research, 2020, v. 18, n. 3, p. 2117, doi. 10.15159/AR.20.191

By:

Lebedev, A.;
Iskenderov, R.;
Zhevora, Y.;
Lebedev, P.;
Marin, N.;
Pavlyuk, R.;
Zaharin, A.

Publication type:

Article

Electron diffraction study of the transformation 6√3 reconstruction on 4H–SiC(0001) into quasi-free-standing epitaxial graphene.

Published in:

Bulletin of Materials Science, 2024, v. 47, n. 4, p. 1, doi. 10.1007/s12034-024-03343-9

By:

Kotousova, I S;
Lebedev, S P;
Antipov, V V;
Lebedev, A A

Publication type:

Article

Terahertz Near-Field Response in Graphene Ribbons.

Published in:

Technical Physics Letters, 2020, v. 46, n. 8, p. 756, doi. 10.1134/S1063785020080027

By:

Alekseev, P. A.;
Borodin, B. R.;
Mustafin, I. A.;
Zubov, A. V.;
Lebedev, S. P.;
Lebedev, A. A.;
Trukhin, V. N.

Publication type:

Article

Studying the Sensitivity of Graphene for Biosensor Applications.

Published in:

Technical Physics Letters, 2020, v. 46, n. 5, p. 462, doi. 10.1134/S1063785020050296

By:

Usikov, A. S.;
Lebedev, S. P.;
Roenkov, A. D.;
Barash, I. S.;
Novikov, S. V.;
Puzyk, M. V.;
Zubov, A. V.;
Makarov, Yu. N.;
Lebedev, A. A.

Publication type:

Article

A Study of the Influence Exerted by Structural Defects on Photoluminescence Spectra in n-3C-SiC.

Published in:

Technical Physics Letters, 2019, v. 45, n. 6, p. 557, doi. 10.1134/S1063785019060117

By:

Lebedev, A. A.;
Nikitina, I. P.;
Seredova, N. V.;
Poletaev, N. K.;
Lebedev, S. P.;
Kozlovski, V. V.;
Zubov, A. V.

Publication type:

Article

Local Anodic Oxidation of Graphene Layers on SiC.

Published in:

Technical Physics Letters, 2018, v. 44, n. 5, p. 381, doi. 10.1134/S1063785018050024

By:

Alekseev, P. A.;
Borodin, B. R.;
Dunaevskii, M. S.;
Smirnov, A. N.;
Davydov, V. Yu.;
Lebedev, S. P.;
Lebedev, A. A.

Publication type:

Article

Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium.

Published in:

Technical Physics Letters, 2017, v. 43, n. 9, p. 849, doi. 10.1134/S106378501709022X

By:

Lebedev, S.;
Eliseyev, I.;
Davydov, V.;
Smirnov, A.;
Levitskii, V.;
Mynbaeva, M.;
Kulagina, M.;
Hähnlein, B.;
Pezoldt, J.;
Lebedev, A.

Publication type:

Article

Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes.

Published in:

Technical Physics Letters, 2016, v. 42, n. 12, p. 1153, doi. 10.1134/S1063785016120051

By:

Davydov, S.;
Lebedev, A.;
Lebedev, S.;
Sitnikova, A.;
Sorokin, L.

Publication type:

Article

Annealing of radiation-compensated silicon carbide.

Published in:

Technical Physics Letters, 2012, v. 38, n. 10, p. 910, doi. 10.1134/S1063785012100069

By:

Lebedev, A.;
Bogdanova, E.;
Grigor'eva, M.;
Lebedev, S.;
Kozlovski, V.

Publication type:

Article

Studying edge luminescence of n-3C-SiC epilayers grown on 6H-SiC substrates.

Published in:

Technical Physics Letters, 2010, v. 36, n. 6, p. 504, doi. 10.1134/S1063785010060052

By:

Lebedev, A. A.;
Abramov, P. L.;
Bogdanova, E. V.;
Lebedev, S. P.;
Nel’son, D. K.;
Razbirin, B. S.;
Tregubova, A. S.

Publication type:

Article

Use of sublimation epitaxy for obtaining volume 3C-SiC crystals.

Published in:

Technical Physics Letters, 2010, v. 36, n. 6, p. 574, doi. 10.1134/S1063785010060258

By:

Lebedev, A. A.;
Abramov, P. L.;
Zubrilov, A. S.;
Bogdanova, E. V.;
Lebedev, S. P.;
Seredova, N. V;
Tregubova, A. S.

Publication type:

Article

Using atomic-step-structured 6H-SiC(0001) surfaces for the calibration of nanotranslations in scanning probe microscopy.

Published in:

Technical Physics Letters, 2009, v. 35, n. 1, p. 47, doi. 10.1134/S1063785009010143

By:

Dunaevskii, M. S;
Makarenko, I. V.;
Petrov, V. N.;
Lebedev, A. A.;
Lebedev, S. P.;
Titkov, A. N.

Publication type:

Article

Galvanomagnetic properties of 3C-SiC epilayers grown on hexagonal SiC substrates.

Published in:

Technical Physics Letters, 2007, v. 33, n. 12, p. 1035, doi. 10.1134/S1063785007120152

By:

Lebedev, A. A.;
Abramov, P. L.;
Agrinskaya, N. V.;
Kozub, V. I.;
Kuznetsov, A. N.;
Lebedev, S. P.;
Oganesyan, G. A.;
Sorokin, L. M.;
Chernyaev, A. V.;
Shamshur, D. V.

Publication type:

Article

Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates.

Published in:

Technical Physics Letters, 2007, v. 33, n. 6, p. 524, doi. 10.1134/S1063785007060235

By:

Lebedev, A. A.;
Zelenin, V. V.;
Abramov, P. L.;
Lebedev, S. P.;
Smirnov, A. N.;
Sorokin, L. M.;
Shcheglov, M. P.;
Yakimova, R.

Publication type:

Article

Investigation of superconducting crystals by neutron scattering and nuclear microanalysis.

Published in:

Technical Physics Letters, 1998, v. 24, n. 2, p. 144, doi. 10.1134/1.1262028

By:

Evmenenko, G. A.;
Lebedev, V. M.;
Lebedev, V. T.;
Sibilev, A. I.;
Churin, S. A.

Publication type:

Article

DETERMINING CONDITIONS FOR PROVIDING MAXIMUM TRACTION EFFICIENCY OF TRACTOR AS PART OF A SOIL TILLAGE UNIT.

Published in:

Eastern-European Journal of Enterprise Technologies, 2024, v. 127, n. 1, p. 6, doi. 10.15587/1729-4061.2024.297902

By:

Lebedev, Anatoliy;
Shuliak, Mykhailo;
Lebedev, Sergei;
Khalin, Stanislav;
Haidai, Tetiana;
Kholodov, Anton;
Pirogov, Viacheslav;
Shaposhnyk, Vitalii

Publication type:

Article

Investigation of the Morphology and Electrical Properties of Graphene Used in the Development of Biosensors for Detection of Influenza Viruses.

Published in:

Biosensors (2079-6374), 2022, v. 12, n. 1, p. 8, doi. 10.3390/bios12010008

By:

Shmidt, Natalia M.;
Usikov, Alexander S.;
Shabunina, Evgeniia I.;
Nashchekin, Alexey V.;
Gushchina, Ekaterina V.;
Eliseev, Ilya A.;
Petrov, Vasily N.;
Puzyk, Mikhail V.;
Avdeev, Oleg V.;
Klotchenko, Sergey A.;
Lebedev, Sergey P.;
Tanklevskaya, Elena M.;
Makarov, Yuri N.;
Lebedev, Alexander A.;
Vasin, Andrey V.

Publication type:

Article

Spatial landscape differentiation of the coastal geostructure of the Shkota Island, Sea of Japan.

Published in:

Journal of Water & Land Development, 2020, v. 46, n. 1, p. 60, doi. 10.24425/jwld.2020.134198

By:

GANZEI, Kirill;
ZHARIKOV, Vasilii;
PSHENICHNIKOVA, Nina;
LEBEDEV, Andrei;
KISELYOVA, Alena;
LEBEDEV, Ilia

Publication type:

Article

On the Calculation of the Main Characteristics of the Pulsation Crystallizer.

Published in:

Chemical & Petroleum Engineering, 2020, v. 56, n. 3/4, p. 188, doi. 10.1007/s10556-020-00758-z

By:

Gudanov, I. S.;
Lebedev, A. E.;
Lebedev, D. V.;
Kapranova, A. B.

Publication type:

Article