Study of p-ZnO Fabricated by Thermally Oxidized Zn 3 N 2.
- Published in:
- Integrated Ferroelectrics, 2013, v. 143, n. 1, p. 58, doi. 10.1080/10584587.2013.795846
- By:
- Publication type:
- Article
Works by Lan, Wen-How
Results: 11
1
2
Hot Carrier Stress Sensing Bulk Current for 28 nm Stacked High-k nMOSFETs.
- Published in:
- Electronics (2079-9292), 2020, v. 9, n. 12, p. 2095, doi. 10.3390/electronics9122095
- By:
- Publication type:
- Article
3
Q -Factor Performance of 28 nm-Node High-K Gate Dielectric under DPN Treatment at Different Annealing Temperatures.
- Published in:
- Electronics (2079-9292), 2020, v. 9, n. 12, p. 2086, doi. 10.3390/electronics9122086
- By:
- Publication type:
- Article
4
Thickness Study of Ga 2 O 3 Barrier Layer in p-Si/n-MgZnO:Er/Ga 2 O 3 /ZnO:In Diode.
- Published in:
- Crystals (2073-4352), 2023, v. 13, n. 2, p. 275, doi. 10.3390/cryst13020275
- By:
- Publication type:
- Article
5
Low-Frequency Vibration Sensor with Dual-Fiber Fabry–Perot Interferometer Using a Low-Coherence LED.
- Published in:
- Crystals (2073-4352), 2022, v. 12, n. 8, p. 1079, doi. 10.3390/cryst12081079
- By:
- Publication type:
- Article
6
High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs.
- Published in:
- Crystals (2073-4352), 2021, v. 11, n. 3, p. 262, doi. 10.3390/cryst11030262
- By:
- Publication type:
- Article
7
On the Nitrogen Doping in Erbium and Nitrogen Codoped Magnesium Zinc Oxide Diode by Spray Pyrolysis.
- Published in:
- Crystals (2073-4352), 2020, v. 10, n. 1, p. 34, doi. 10.3390/cryst10010034
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- Publication type:
- Article
8
Study of N-doping in (Bi2MoO6, MoO3)/SnOx:N photocatalys in the degradation of RhB using visible light.
- Published in:
- Modern Physics Letters B, 2021, v. 35, n. 29, p. 1, doi. 10.1142/S0217984921410074
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- Publication type:
- Article
9
Thickness Study of Er-Doped Magnesium Zinc Oxide Diode by Spray Pyrolysis.
- Published in:
- Crystals (2073-4352), 2018, v. 8, n. 12, p. 454, doi. 10.3390/cryst8120454
- By:
- Publication type:
- Article
10
Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments.
- Published in:
- Journal of Electronic Materials, 2020, v. 49, n. 11, p. 6764, doi. 10.1007/s11664-020-08182-y
- By:
- Publication type:
- Article
11
Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments.
- Published in:
- Micromachines, 2022, v. 13, n. 11, p. 1861, doi. 10.3390/mi13111861
- By:
- Publication type:
- Article