Found: 14
Select item for more details and to access through your institution.
High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions.
- Published in:
- Acta Physica Polonica: A, 2016, v. 129, n. 1A, p. A-126, doi. 10.12693/APhysPolA.129.A-126
- By:
- Publication type:
- Article
Near IR Refractive Index for GaInN Heavily Doped.
- Published in:
- Acta Physica Polonica: A, 2009, v. 116, n. 5, p. 936
- By:
- Publication type:
- Article
Infrared Reflectivity and Transport Investigations of GaN Single Crystals and Homoepitaxial Layers.
- Published in:
- Physica Status Solidi (B), 1999, v. 216, n. 1, p. 91, doi. 10.1002/(SICI)1521-3951(199911)216:1<91::AID-PSSB91>3.0.CO;2-E
- By:
- Publication type:
- Article
Electrical Properties of GaN Bulk Single Crystals Doped with Mg.
- Published in:
- Physica Status Solidi (B), 1999, v. 216, n. 1, p. 567, doi. 10.1002/(SICI)1521-3951(199911)216:1<567::AID-PSSB567>3.0.CO;2-0
- By:
- Publication type:
- Article
Electrical Properties of InGaP:Si and AlGaAs:Sn Epitaxial Layers.
- Published in:
- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 565, doi. 10.1002/(SICI)1521-3951(199901)211:1<565::AID-PSSB565>3.0.CO;2-G
- By:
- Publication type:
- Article
Study of Quantum and Classical Scattering Times in Pseudomorphic AlGaAs/InGaAs/GaAs by Means of Pressure.
- Published in:
- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 283, doi. 10.1002/pssb.2221980136
- By:
- Publication type:
- Article
Photoionization of the Si-DX Center in AIGaAs: The Effects of Pressure and Local Configuration.
- Published in:
- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 205, doi. 10.1002/pssb.2221980128
- By:
- Publication type:
- Article
High nitrogen pressure solution growth of bulk GaN in 'feed-seed' configuration.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 7, p. 1507, doi. 10.1002/pssa.201000981
- By:
- Publication type:
- Article
Investigation of Electron Mobility in a Two-Dimensional Electron Gas. GaAs-Al<sub> x</sub>Ga<sub>1− x</sub>As Heterostructures, Application of the Hydrostatic Pressure Method.
- Published in:
- Physica Status Solidi (B), 1990, v. 157, n. 2, p. 593, doi. 10.1002/pssb.2221570210
- By:
- Publication type:
- Article
On the deep impurity level in n-InSb.
- Published in:
- Physica Status Solidi (B), 1982, v. 114, n. 2, p. K153, doi. 10.1002/pssb.2221140269
- By:
- Publication type:
- Article
The Electron Mobility and Thermoelectric Power in InSb at Atmospheric and Hydrostatic Pressures.
- Published in:
- Physica Status Solidi (B), 1981, v. 106, n. 2, p. 551, doi. 10.1002/pssb.2221060217
- By:
- Publication type:
- Article
Scattering on Short-Range Potentials in Semiconductors with a Narrow Enerpy Gap.
- Published in:
- Physica Status Solidi (B), 1976, v. 74, n. 2, p. K89, doi. 10.1002/pssb.2220740242
- By:
- Publication type:
- Article
Scattering on short-range potentials in InSb.
- Published in:
- Physica Status Solidi (B), 1971, v. 48, n. 2, p. 525, doi. 10.1002/pssb.2220480209
- By:
- Publication type:
- Article
Influence of pressure on the mobility in heavily doped n-type indium antimonide.
- Published in:
- Physica Status Solidi (B), 1971, v. 48, n. 2, p. 519, doi. 10.1002/pssb.2220480208
- By:
- Publication type:
- Article