Found: 23
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Advanced Design of a III‐Nitride Light‐Emitting Diode via Machine Learning.
- Published in:
- Laser & Photonics Reviews, 2023, v. 17, n. 12, p. 1, doi. 10.1002/lpor.202300113
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- Article
Advanced Design of a III‐Nitride Light‐Emitting Diode via Machine Learning (Laser Photonics Rev. 17(12)/2023).
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- Laser & Photonics Reviews, 2023, v. 17, n. 12, p. 1, doi. 10.1002/lpor.202370059
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- Article
Micro-Nanoarchitectonics of Ga 2 O 3 /GaN Core-Shell Rod Arrays for High-Performance Broadband Ultraviolet Photodetection.
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- Crystals (2073-4352), 2023, v. 13, n. 2, p. 366, doi. 10.3390/cryst13020366
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- Article
Effect of Growth Pressure on Properties of β-Ga<sub>2</sub>O<sub>3</sub> Thin Films Grown by Molecular Beam Epitax.
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- Journal of Synthetic Crystals, 2022, v. 51, n. 7, p. 1152
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- Article
Role of Strain-Induced Microscale Compositional Pulling on Optical Properties of High Al Content AlGaN Quantum Wells for Deep-Ultraviolet LED.
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- Nanoscale Research Letters, 2022, v. 17, n. 1, p. 1, doi. 10.1186/s11671-022-03652-0
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- Article
Electrode‐Dependent Electrical Properties of Detection‐Band Tunable Ultraviolet Photodetectors Based on Ga<sub>2</sub>O<sub>3</sub>/GaN Heterostructures.
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- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 15, p. 1, doi. 10.1002/pssa.202100166
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- Article
Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes.
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- Light: Science & Applications, 2021, v. 10, n. 1, p. 1, doi. 10.1038/s41377-021-00563-0
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- Article
Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density.
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- Nanoscale Research Letters, 2021, v. 16, n. 1, p. 1, doi. 10.1186/s11671-021-03557-4
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- Article
Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling.
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- 2020
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- Publication type:
- Letter
Fabrication of High‐Voltage Flip Chip Deep Ultraviolet Light‐Emitting Diodes Using an Inclined Sidewalls Structure.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 16, p. N.PAG, doi. 10.1002/pssa.201900059
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- Article
Defect Self‐Compensation for High‐Mobility Bilayer InGaZnO/In<sub>2</sub>O<sub>3</sub> Thin‐Film Transistor.
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- Advanced Electronic Materials, 2019, v. 5, n. 6, p. N.PAG, doi. 10.1002/aelm.201900125
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- Article
Semipolar (112¯2) GaN Films Improved by in situ SiN<sub>x</sub> Pretreatment of m‐Sapphire Substrate Surface.
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- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 7, p. N.PAG, doi. 10.1002/pssa.201900001
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- Article
Study on Optical Properties and Internal Quantum Efficiency Measurement of GaN-based Green LEDs.
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- Applied Sciences (2076-3417), 2019, v. 9, n. 3, p. 383, doi. 10.3390/app9030383
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- Article
Integration of High-k Oxide on MoS<sub>2</sub> by Using Ozone Pretreatment for High-Performance MoS<sub>2</sub> Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation.
- Published in:
- Small, 2015, v. 11, n. 44, p. 5932, doi. 10.1002/smll.201501260
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- Article
Floating Gate Memory-based Monolayer MoS<sub>2</sub> Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics.
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- Small, 2015, v. 11, n. 2, p. 208, doi. 10.1002/smll.201401872
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- Publication type:
- Article
High Mg effective incorporation in Al-rich AlGaN by periodic repetition of ultimate V/III ratio conditions.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-40
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- Article
The InN epitaxy via controlling In bilayer.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-5
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- Article
Interface Engineering for High-Performance Top-Gated MoS<sub>2</sub> Field-Effect Transistors.
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- Advanced Materials, 2014, v. 26, n. 36, p. 6255, doi. 10.1002/adma.201402008
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- Article
High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability.
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- Scientific Reports, 2014, p. 1, doi. 10.1038/srep05166
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- Publication type:
- Article
Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons.
- Published in:
- Scientific Reports, 2014, p. 1, doi. 10.1038/srep04380
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- Publication type:
- Article
Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons.
- Published in:
- Scientific Reports, 2014, p. 1, doi. 10.1038/srep04380
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- Publication type:
- Article
Impact of annealing on morphology and thermal stability of Bi<sub>2</sub>O<sub>3</sub> nanotube-based microarchitectures.
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- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 11, p. 2157, doi. 10.1002/pssa.201228246
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- Article
ZnO nanosheet-based hierarchical microarchitectures for enhanced conversion efficiency in dye-sensitized solar cells.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 10, p. 1905, doi. 10.1007/s10854-012-0682-0
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- Publication type:
- Article