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Get 79-2020 State Primary Special Standard of the Unit of Specific Heat of Solids in the Temperature Range from 2 to 300 K.
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- Measurement Techniques, 2023, v. 66, n. 3, p. 143, doi. 10.1007/s11018-023-02202-z
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State Primary Special Standard of the Unit of Thermal Conductivity of Solids in the Temperature Range from 2 K to 300 K Get 141-2020.
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- Measurement Techniques, 2022, v. 65, n. 9, p. 621, doi. 10.1007/s11018-023-02130-y
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Enhancement of electron mobility and thermoelectric power factor of cobalt‐doped n‐type Bi<sub>2</sub>Te<sub>3</sub>.
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- International Journal of Energy Research, 2022, v. 46, n. 12, p. 17029, doi. 10.1002/er.8366
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Thermoelectric Figure of Merit and Quantum Mobility of Holes in Copper-Doped Antimony-Telluride Single Crystals.
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- Semiconductors, 2022, v. 56, n. 2, p. 78, doi. 10.1134/S1063782622010092
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Realization of a New Definition of Kelvin on State Primary Standard of Temperature Unit Get 35-2021 in the Temperature Range from 0.3 To 273.16 K.
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- Measurement Techniques, 2021, v. 64, n. 8, p. 613, doi. 10.1007/s11018-021-01980-8
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Rietveld Analysis of Elpidite Framework Flexibility Using in Situ Powder XRD Data of Thermally Treated Samples.
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- Minerals (2075-163X), 2020, v. 10, n. 7, p. 639, doi. 10.3390/min10070639
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Installation of Relative Acoustic Gas Thermometry in the Low Temperature Range from 4.2 to 80 K.
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- Measurement Techniques, 2020, v. 63, n. 1, p. 45, doi. 10.1007/s11018-020-01748-6
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Crystal Chemistry and Properties of Elpidite and Its Ag-Exchanged Forms.
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- Minerals (2075-163X), 2019, v. 9, n. 7, p. 420, doi. 10.3390/min9070420
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Shubnikov–de Haas Effect and Electrophysical Properties of the Topological Insulator Sb<sub>2 –</sub><sub>x</sub>Cu<sub>x</sub>Te<sub>3</sub>.
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- Journal of Experimental & Theoretical Physics, 2019, v. 128, n. 6, p. 926, doi. 10.1134/S1063776119050121
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Thermoelectric Properties of Sb<sub>2</sub>Te<sub>3</sub>-Based Nanocomposites with Graphite.
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- Semiconductors, 2019, v. 53, n. 5, p. 638, doi. 10.1134/S1063782619050129
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Magnetoresistance of ZnO:Co Thin Films at Low Temperatures.
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- Journal of Low Temperature Physics, 2016, v. 185, n. 5/6, p. 707, doi. 10.1007/s10909-016-1596-7
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Effect of thallium doping on the mobility of electrons in BiSe and holes in SbTe.
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- Semiconductors, 2016, v. 50, n. 7, p. 869, doi. 10.1134/S1063782616070113
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Analysis of the Shape of Acoustic Signal Frequency Responses While Determining Absolute Temperature.
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- Measurement Techniques, 2016, v. 59, n. 1, p. 62, doi. 10.1007/s11018-016-0917-1
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The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped SbTe and BiSe.
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- Semiconductors, 2015, v. 49, n. 6, p. 767, doi. 10.1134/S1063782615060135
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Modeling of Acoustic Resonance in Spherical Resonators for the Precision Determination of Thermodynamic Temperature.
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- Measurement Techniques, 2015, v. 58, n. 1, p. 50, doi. 10.1007/s11018-015-0662-x
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Magnetoresistance of thin films due to weak localization under the variation of the dimensionality induced by the magnetic field and temperature.
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- JETP Letters, 2015, v. 101, n. 3, p. 189, doi. 10.1134/S0021364015030121
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Conducting properties of InO:Sn thin films at low temperatures.
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- Applied Physics A: Materials Science & Processing, 2014, v. 114, n. 3, p. 957, doi. 10.1007/s00339-013-7799-8
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Anomalously low thermal conductivity and thermoelectric properties of new cationic clathrates in the Sn-In-As-I system.
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- Semiconductors, 2011, v. 45, n. 11, p. 1399, doi. 10.1134/S106378261111025X
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Thermoelectric properties of bismuth telluride nanocomposites with fullerene.
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- Semiconductors, 2011, v. 45, n. 9, p. 1194, doi. 10.1134/S1063782611090132
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Thermoelectric properties of BiTeI with addition of BiI, CuI, and overstoichiometric Bi.
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- Semiconductors, 2011, v. 45, n. 7, p. 845, doi. 10.1134/S1063782611070128
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Galvanomagnetic and thermoelectric properties of BiTeBr and BiTeI single crystals and their electronic structure.
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- Semiconductors, 2010, v. 44, n. 12, p. 1548, doi. 10.1134/S1063782610120031
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Electrical conductivity of ZnCoO ferromagnetic films at low temperatures.
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- Journal of Experimental & Theoretical Physics, 2010, v. 111, n. 2, p. 225, doi. 10.1134/S106377611008011X
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Anomalous enhancement of the thermoelectric power in gallium-doped p-(Bi<sub>1 − x</sub>Sb<sub> x</sub>)<sub>2</sub>Te<sub>3</sub> single crystals.
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- Journal of Experimental & Theoretical Physics, 2010, v. 110, n. 4, p. 618, doi. 10.1134/S1063776110040096
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The conductivity and magnetic properties of zinc oxide thin films doped with cobalt.
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- Semiconductors, 2010, v. 44, n. 2, p. 155, doi. 10.1134/S1063782610020053
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Superconductivity, Electron Paramagnetic Resonance, and Raman Scattering Studies of Heterofullerides with Cs and Mg.
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- Advances in Condensed Matter Physics, 2008, p. 1, doi. 10.1155/2008/941372
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Thermoelectric properties and ferromagnetism of diluted magnetic semiconductors Sb<sub>2 − x </sub>Cr<sub> x </sub>Te<sub>3</sub>.
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- Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 21, doi. 10.1134/S1063776107070060
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Superconductivity and spectroscopy of heterofullerides Rb<sub>2</sub>MC<sub>60</sub>, K<sub>2</sub>MC<sub>60</sub>, and KM<sub>2</sub>C<sub>60</sub> (M = Mg, Be).
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- Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 250, doi. 10.1134/S1063776107070552
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Electronic properties of single-crystal diamonds heavily doped with boron.
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- Journal of Experimental & Theoretical Physics, 2007, v. 104, n. 4, p. 586, doi. 10.1134/S1063776107040097
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Low-temperature electrical conductivity of heavily boron-doped diamond single crystals.
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- Physica Status Solidi (B), 2007, v. 244, n. 1, p. 413, doi. 10.1002/pssb.200672526
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Persistent IR photoconductivity in InAs/GaAs structures with QD layers.
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- Semiconductors, 2006, v. 40, n. 2, p. 210, doi. 10.1134/S1063782606020187
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Superhard Superconducting Materials Based on Diamond and Cubic Boron Nitride.
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- JETP Letters, 2005, v. 81, n. 6, p. 260, doi. 10.1134/1.1931011
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A rapid method for low-temperature synthesis of the Na analogue of the microporous titanosilicate GTS-1.
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- Journal of Materials Science, 2004, v. 39, n. 13, p. 4343, doi. 10.1023/B:JMSC.0000033422.72782.99
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Improved powder diffraction patterns for synthetic paranatisite and natisite.
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- Powder Diffraction, 2002, v. 17, n. 3, p. 234, doi. 10.1154/1.1483323
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Conductance Anisotropy of δ-Si Doped GaAs Layers Grown by Molecular Beam Epitaxy on (111)A GaAs Substrates and Misoriented in the [211] Direction.
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- Doklady Physics, 2002, v. 47, n. 6, p. 419, doi. 10.1134/1.1493376
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Microwave Photoconductivity in Nanocrystalline Porous Titanium Oxide Subjected to Pulsed Laser Excitation.
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- Semiconductors, 2002, v. 36, n. 3, p. 319, doi. 10.1134/1.1461410
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Electrical Transport and Persistent Photoconductivity in Quantum Dot Layers in InAs/GaAs Structures.
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- Journal of Experimental & Theoretical Physics, 2001, v. 93, n. 4, p. 815, doi. 10.1134/1.1420451
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Influence of Silver on the Galvanomagnetic Properties and Energy Spectrum of Mixed (Bi[sub 1 – ][sub x]Sb[sub x])[sub 2]Te[sub 3] Crystals.
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- Journal of Experimental & Theoretical Physics, 2000, v. 90, n. 6, p. 1081, doi. 10.1134/1.559198
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Negative persistent photoconductivity in GaAs(δ-Sn) structures.
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- Journal of Experimental & Theoretical Physics, 1999, v. 89, n. 6, p. 1154, doi. 10.1134/1.559065
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Transport and optical properties of tin δ-doped GaAs structures.
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- Semiconductors, 1999, v. 33, n. 7, p. 771, doi. 10.1134/1.1187779
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Photoluminescence and transport properties of multilayer InAs/GaAs structures with quantum dots.
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- Semiconductors, 1999, v. 33, n. 3, p. 318
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Quenching of photoconductivity by a strong electric field in tin δ-doped GaAs structures.
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- JETP Letters, 1996, v. 63, n. 5, p. 336, doi. 10.1134/1.567027
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