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Study of 1500 V AlGaN/GaN High-Electron-Mobility Transistors Grown on Engineered Substrates.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 11, p. 2143, doi. 10.3390/electronics13112143
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- Article
Innovative Stacked Yellow and Blue Mini-LED Chip for White Lamp Applications.
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- Micromachines, 2024, v. 15, n. 6, p. 796, doi. 10.3390/mi15060796
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- Article
A Colloidal-Quantum-Dot Integrated U-Shape Micro-Light-Emitting-Diode and Its Photonic Characteristics.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 11, p. 938, doi. 10.3390/nano14110938
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- Article
52‐4: Micro LED Display Light Extraction Efficiency Improvement by Secondary Optics on Substrate.
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- SID Symposium Digest of Technical Papers, 2024, v. 55, n. 1, p. 717, doi. 10.1002/sdtp.17626
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- Article
Advancing LED technology: the FDCSP element's breakthrough in mini and micro-LED packaging and backlight module enhancement.
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- Discover Nano, 2024, v. 19, n. 1, p. 1, doi. 10.1186/s11671-024-04033-5
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- Article
High-Efficiency and Large-Angle Homo-Metagratings for the Near-Infrared Region.
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- Photonics, 2024, v. 11, n. 5, p. 392, doi. 10.3390/photonics11050392
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- Publication type:
- Article
InGaN blue resonant cavity micro-LED with RGY quantum dot layer for broad gamut, efficient displays.
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- Discover Nano, 2024, v. 19, n. 1, p. 1, doi. 10.1186/s11671-024-04018-4
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- Article
Tailoring Electronic Properties of Colloidal Quantum Dots for Efficient Optoelectronics.
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- Advanced Photonics Research, 2024, v. 5, n. 4, p. 1, doi. 10.1002/adpr.202300216
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- Publication type:
- Article
Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure.
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- Micromachines, 2024, v. 15, n. 4, p. 517, doi. 10.3390/mi15040517
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- Article
Microdisplays: Mini‐LED, Micro‐OLED, and Micro‐LED.
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- Advanced Optical Materials, 2024, v. 12, n. 7, p. 1, doi. 10.1002/adom.202300112
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- Publication type:
- Article
Recent Advances in Light Detection and Ranging: Optical Modulation Solutions and Novel Nanotechnologies.
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- Advanced Quantum Technologies, 2024, v. 7, n. 2, p. 1, doi. 10.1002/qute.202300157
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- Article
Design and Simulation of InGaN-Based Red Vertical-Cavity Surface-Emitting Lasers.
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- Micromachines, 2024, v. 15, n. 1, p. 87, doi. 10.3390/mi15010087
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- Article
Correction to: Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity.
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- 2023
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- Publication type:
- Correction Notice
Design of Electrocatalytic Janus WSeS/WSe<sub>2</sub> Heterostructure Nanowall Electrodes with High Selectivity and Faradaic Efficiency for Nitrogen Reduction.
- Published in:
- Advanced Energy Materials, 2023, v. 13, n. 46, p. 1, doi. 10.1002/aenm.202301979
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- Article
Design of Electrocatalytic Janus WSeS/WSe<sub>2</sub> Heterostructure Nanowall Electrodes with High Selectivity and Faradaic Efficiency for Nitrogen Reduction (Adv. Energy Mater. 46/2023).
- Published in:
- Advanced Energy Materials, 2023, v. 13, n. 46, p. 1, doi. 10.1002/aenm.202301979
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- Article
Metasurface-driven polarization-division multiplexing of PCSEL for optical communications.
- Published in:
- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03935-0
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- Publication type:
- Article
Dynamical characteristics of AC-driven hybrid WSe<sub>2</sub> monolayer/AlGaInP quantum wells light-emitting device.
- Published in:
- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03920-7
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- Publication type:
- Article
Optimized Design with Artificial Intelligence Quantum Dot White Mini LED Backlight Module Development.
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- Crystals (2073-4352), 2023, v. 13, n. 10, p. 1411, doi. 10.3390/cryst13101411
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- Article
Vertical GaN MOSFET Power Devices.
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- Micromachines, 2023, v. 14, n. 10, p. 1937, doi. 10.3390/mi14101937
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- Article
Enhanced Modulation Bandwidth by Integrating 2D Semiconductor and Quantum Dots for Visible Light Communication.
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- Advanced Photonics Research, 2023, v. 4, n. 9, p. 1, doi. 10.1002/adpr.202300166
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- Publication type:
- Article
Bright and Efficient Light‐Emitting Devices Based on 2D Transition Metal Dichalcogenides.
- Published in:
- Advanced Materials, 2023, v. 35, n. 31, p. 1, doi. 10.1002/adma.202208054
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- Publication type:
- Article
Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications.
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- Micromachines, 2023, v. 14, n. 8, p. 1582, doi. 10.3390/mi14081582
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- Publication type:
- Article
Brightened Bicomponent Perovskite Nanocomposite Based on Förster Resonance Energy Transfer for Micro‐LED Displays.
- Published in:
- Advanced Materials, 2023, v. 35, n. 30, p. 1, doi. 10.1002/adma.202300834
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- Publication type:
- Article
Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications.
- Published in:
- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03871-z
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- Publication type:
- Article
Ameliorating Uniformity and Color Conversion Efficiency in Quantum Dot-Based Micro-LED Displays through Blue–UV Hybrid Structures.
- Published in:
- Nanomaterials (2079-4991), 2023, v. 13, n. 14, p. 2099, doi. 10.3390/nano13142099
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- Publication type:
- Article
Compact structured light generation based on meta-hologram PCSEL integration.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03866-w
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- Article
77‐1: Invited Paper: The Colloidal Quantum Dot Based Color Conversion Layer for Micro LED Arrays.
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- SID Symposium Digest of Technical Papers, 2023, v. 54, n. 1, p. 1087, doi. 10.1002/sdtp.16760
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- Publication type:
- Article
P‐65: Strategic Realization of the Highest Possible Pixel Density for Quantum Dot Color Converter with Optimized Performance.
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- SID Symposium Digest of Technical Papers, 2023, v. 54, n. 1, p. 1725, doi. 10.1002/sdtp.16934
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- Publication type:
- Article
Structural and optical analyses for InGaN-based red micro-LED.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03853-1
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- Publication type:
- Article
Optoelectronic Simulations of InGaN-Based Green Micro-Resonant Cavity Light-Emitting Diodes with Staggered Multiple Quantum Wells.
- Published in:
- Crystals (2073-4352), 2023, v. 13, n. 4, p. 572, doi. 10.3390/cryst13040572
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- Publication type:
- Article
A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap.
- Published in:
- Micromachines, 2023, v. 14, n. 4, p. 764, doi. 10.3390/mi14040764
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- Publication type:
- Article
Effect of radiative and nonradiative energy transfer processes of light-emitting diodes combined with quantum dots for visible light communication.
- Published in:
- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03812-w
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- Publication type:
- Article
Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer.
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- Micromachines, 2023, v. 14, n. 3, p. 519, doi. 10.3390/mi14030519
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- Publication type:
- Article
Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs.
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- Micromachines, 2023, v. 14, n. 3, p. 576, doi. 10.3390/mi14030576
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- Publication type:
- Article
Highly Luminescent Earth‐Benign Organometallic Manganese Halide Crystals with Ultrahigh Thermal Stability of Emission from 4 to 623 K.
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- Small, 2023, v. 19, n. 8, p. 1, doi. 10.1002/smll.202205981
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- Publication type:
- Article
Highly Luminescent Earth‐Benign Organometallic Manganese Halide Crystals with Ultrahigh Thermal Stability of Emission from 4 to 623 K (Small 8/2023).
- Published in:
- Small, 2023, v. 19, n. 8, p. 1, doi. 10.1002/smll.202370045
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- Publication type:
- Article
Modified Distributed Bragg Reflectors for Color Stability in InGaN Red Micro-LEDs.
- Published in:
- Nanomaterials (2079-4991), 2023, v. 13, n. 4, p. 661, doi. 10.3390/nano13040661
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- Publication type:
- Article
Recent Advances in Micro-LEDs Having Yellow–Green to Red Emission Wavelengths for Visible Light Communications.
- Published in:
- Micromachines, 2023, v. 14, n. 2, p. 478, doi. 10.3390/mi14020478
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- Publication type:
- Article
Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages.
- Published in:
- Micromachines, 2022, v. 13, n. 12, p. 2140, doi. 10.3390/mi13122140
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- Publication type:
- Article
High-Reliability Perovskite Quantum Dots Using Atomic Layer Deposition Passivation for Novel Photonic Applications.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 23, p. 4140, doi. 10.3390/nano12234140
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- Publication type:
- Article
Investigation of InGaN-Based Green Micro-Photonic-Crystal- Light-Emitting-Diodes with Bottom, Nanoporous, Distributed Bragg Reflectors.
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- Photonics, 2022, v. 9, n. 12, p. 939, doi. 10.3390/photonics9120939
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- Publication type:
- Article
4.2: Invited Paper: CsPbBr3 perovskite quantum‐dot paper exhibiting highest 3‐dB bandwidthand realizing flexible white‐light system for visible‐light communication.
- Published in:
- SID Symposium Digest of Technical Papers, 2022, v. 53, p. 59, doi. 10.1002/sdtp.15844
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- Publication type:
- Article
A Simple Method to Build High Power PCSEL Array with Isolation Pattern Design.
- Published in:
- Crystals (2073-4352), 2022, v. 12, n. 10, p. 1432, doi. 10.3390/cryst12101432
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- Publication type:
- Article
Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies.
- Published in:
- Micromachines, 2022, v. 13, n. 10, p. 1752, doi. 10.3390/mi13101752
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- Publication type:
- Article
Design of High-Power Red VCSEL on a Removable Substrate.
- Published in:
- Photonics, 2022, v. 9, n. 10, p. N.PAG, doi. 10.3390/photonics9100763
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- Publication type:
- Article
Performance Analyses of Photonic-Crystal Surface-Emitting Laser: Toward High-Speed Optical Communication.
- Published in:
- Nanoscale Research Letters, 2022, v. 17, n. 1, p. 1, doi. 10.1186/s11671-022-03728-x
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- Publication type:
- Article
Reliability Enhancement of 14 nm HPC ASIC Using Al 2 O 3 Thin Film Coated with Room-Temperature Atomic Layer Deposition.
- Published in:
- Coatings (2079-6412), 2022, v. 12, n. 9, p. N.PAG, doi. 10.3390/coatings12091308
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- Publication type:
- Article
Modulating Light Emission Performance of PCSEL via GaN HEMT Driving Circuit.
- Published in:
- Crystals (2073-4352), 2022, v. 12, n. 9, p. N.PAG, doi. 10.3390/cryst12091242
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- Publication type:
- Article
Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor.
- Published in:
- Micromachines, 2022, v. 13, n. 9, p. 1554, doi. 10.3390/mi13091554
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- Publication type:
- Article
Design of High Peak Power Pulsed Laser Diode Driver.
- Published in:
- Photonics, 2022, v. 9, n. 9, p. N.PAG, doi. 10.3390/photonics9090652
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- Publication type:
- Article