Found: 16
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Studying the composition and structure of films obtained by thermal oxidation of copper.
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- Glass Physics & Chemistry, 2017, v. 43, n. 3, p. 272, doi. 10.1134/S1087659617030026
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- Article
Relaxation of the Energy of Optically Excited States in the Carbon Quantum Dots.
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- Eurasian Chemico-Technological Journal, 2018, v. 20, n. 3, p. 209, doi. 10.18321/ectj723
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- Article
Effect of Heat and Plasma Treatments on the Photoluminescence of Zinc-Oxide Films.
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- Semiconductors, 2018, v. 52, n. 2, p. 177, doi. 10.1134/S1063782618020021
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- Article
Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma.
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- Semiconductors, 2016, v. 50, n. 8, p. 1010, doi. 10.1134/S1063782616080029
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- Article
Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons.
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- Semiconductors, 2016, v. 50, n. 4, p. 453, doi. 10.1134/S106378261604014X
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- Article
Composite materials based on nanostructured zinc oxide.
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- Semiconductors, 2014, v. 48, n. 4, p. 471, doi. 10.1134/S1063782614040022
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- Article
Model of the formation of a polycrystalline n-ZnO/ p-CuO heterojunction.
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- Semiconductors, 2013, v. 47, n. 5, p. 655, doi. 10.1134/S1063782613050035
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- Article
Thin-film polycrystalline n-ZnO/ p-CuO heterojunction.
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- Semiconductors, 2009, v. 43, n. 6, p. 765, doi. 10.1134/S1063782609060153
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- Article
Energy distribution of nonequilibrium electrons and optical phonons in GaAs under band-to-band pumping by intense short pulses of light.
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- Semiconductors, 2009, v. 43, n. 3, p. 289, doi. 10.1134/S1063782609030051
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- Article
The role of screening of the electron-phonon interaction in relaxation of photoexcited electron-hole plasma in semiconductors.
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- Semiconductors, 2008, v. 42, n. 8, p. 922, doi. 10.1134/S1063782608080083
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- Article
Electrical properties of n-ZnO/ p-CuO heterostructures.
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- Semiconductors, 2007, v. 41, n. 3, p. 288, doi. 10.1134/S1063782607030098
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- Article
Modulation of the Characteristics of Intense Picosecond Stimulated Emission from GaAs.
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- Semiconductors, 2005, v. 39, n. 6, p. 650, doi. 10.1134/1.1944854
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- Article
A Local Specific Feature of Variation in the Spectrum of Picosecond Superluminescence upon Adding Excited Carriers to a Non-Fermi Electron–Hole Plasma in GaAs.
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- Semiconductors, 2003, v. 37, n. 5, p. 526, doi. 10.1134/1.1575355
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- Article
“LO-Phonon” Correlation between Picosecond Superluminescence Spectrum and Special Features of Absorption Spectrum in GaAs for Non-Fermi Distribution of Carriers Induced by Picosecond Light Pulse.
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- Semiconductors, 2002, v. 36, n. 2, p. 136, doi. 10.1134/1.1453425
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- Article
Diffuse spectra model of photoluminescence in carbon quantum dots.
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- Bulletin of Materials Science, 2020, v. 43, n. 1, p. 1, doi. 10.1007/s12034-020-02168-6
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- Article
The Influence of Ultraviolet Exposure and Humidity on the Photoluminescence Spectra of Zinc Oxide.
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- Technical Physics Letters, 2018, v. 44, n. 7, p. 591, doi. 10.1134/S1063785018070027
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- Article