Works matching AU Kulagina, M. M.

Results: 75

Two-State Lasing in Injection Microdisks with InAs/InGaAs Quantum Dots.

Published in:

Technical Physics Letters, 2023, v. 49, p. S330, doi. 10.1134/S1063785023010236

By:

Makhov, I. S.;
Beckman, A. A.;
Kulagina, M. M.;
Guseva, Yu. A.;
Kryzhanovskaya, N. V.;
Nadtochiy, A. M.;
Maximov, M. V.;
Zhukov, A. E.

Publication type:

Article

Focused Ion Beam Milling of Ridge Waveguides of Edge-Emitting Semiconductor Lasers.

Published in:

Technical Physics Letters, 2023, v. 49, p. S288, doi. 10.1134/S1063785023010285

By:

Payusov, A. S.;
Mitrofanov, M. I.;
Kornyshov, G. O.;
Serin, A. A.;
Voznyuk, G. V.;
Kulagina, M. M.;
Evtikhiev, V. P.;
Gordeev, N. Yu.;
Maximov, M. V.;
Breuer, S.

Publication type:

Article

Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes.

Published in:

Technical Physics Letters, 2023, v. 49, p. S215, doi. 10.1134/S1063785023900819

By:

Maleev, N. A.;
Kuzmenkov, A. G.;
Kulagina, M. M.;
Vasyl'ev, A. P.;
Blokhin, S. A.;
Troshkov, S. I.;
Nashchekin, A. V.;
Bobrov, M. A.;
Blokhin, A. A.;
Voropaev, K. O.;
Bugrov, V. E.;
Ustinov, V. M.

Publication type:

Article

Investigation of the Noise Characteristics of Vertical-Cavity Surface-Emitting Laser with a Rhomboidal Oxide Current Aperture for Use in a Cs-Based Compact Atomic Magnetometer.

Published in:

Technical Physics Letters, 2023, v. 49, p. S184, doi. 10.1134/S1063785023900686

By:

Bobrov, M. A.;
Blokhin, S. A.;
Maleev, N. A.;
Kuzmenkov, A. G.;
Blokhin, A. A.;
Vasilyev, A. P.;
Kulagina, M. M.;
Pazgalev, A. S.;
Novikov, I. I.;
Karachinsky, L. Ya.;
Ustinov, V. M.

Publication type:

Article

An Investigation of the Sensitivity of a Microdisk Laser to a Change in the Refractive Index of the Environment.

Published in:

Technical Physics Letters, 2022, v. 48, n. 2, p. 74, doi. 10.1134/S1063785022030063

By:

Kryzhanovskaya, N. V.;
Melnichenko, I. A.;
Bukatin, A. S.;
Kornev, A. A.;
Filatov, N. A.;
Shcherbak, S. A.;
Lipovskii, A. A.;
Dragunova, A. S.;
Kulagina, M. M.;
Likhachev, A. I.;
Fetisova, M. V.;
Reduto, I. V.;
Maximov, M. V.;
Zhukov, A. E.

Publication type:

Article

Energy Consumption at High-Frequency Modulation of an Uncooled InGaAs/GaAs/AlGaAs Microdisk Laser.

Published in:

Technical Physics Letters, 2021, v. 47, n. 9, p. 685, doi. 10.1134/S1063785021070142

By:

Zhukov, A. E.;
Moiseev, E. I.;
Nadtochii, A. M.;
Dragunova, A. S.;
Kryzhanovskaya, N. V.;
Kulagina, M. M.;
Mintairov, S. A.;
Kalyuzhnyi, N. A.;
Zubov, F. I.;
Maksimov, M. V.

Publication type:

Article

Lasing of Injection Microdisks with InAs/InGaAs/GaAs Quantum Dots Transferred to Silicon.

Published in:

Technical Physics Letters, 2020, v. 46, n. 8, p. 783, doi. 10.1134/S1063785020080295

By:

Zhukov, A. E.;
Moiseev, E. I.;
Nadtochii, A. M.;
Dragunova, A. S.;
Kryzhanovskaya, N. V.;
Kulagina, M. M.;
Mozharov, A. M.;
Kadinskaya, S. A.;
Simchuk, O. I.;
Zubov, F. I.;
Maximov, M. V.

Publication type:

Article

A Micro Optocoupler Based on a Microdisk Laser and a Photodetector with an Active Region Based on Quantum Well-Dots.

Published in:

Technical Physics Letters, 2020, v. 46, n. 7, p. 629, doi. 10.1134/S1063785020070111

By:

Kryzhanovskaya, N. V.;
Moiseev, E. I.;
Nadtochiy, A. M.;
Kharchenko, A. A.;
Kulagina, M. M.;
Mintairov, S. A.;
Kalyuzhnyy, N. A.;
Maximov, M. V.;
Zhukov, A. E.

Publication type:

Article

The Effect of Self-Heating on the Modulation Characteristics of a Microdisk Laser.

Published in:

Technical Physics Letters, 2020, v. 46, n. 6, p. 515, doi. 10.1134/S1063785020060152

By:

Zhukov, A. E.;
Moiseev, E. I.;
Nadtochii, A. M.;
Kryzhanovskaya, N. V.;
Kulagina, M. M.;
Mintairov, S. A.;
Kalyuzhnyi, N. A.;
Zubov, F. I.;
Maximov, M. V.

Publication type:

Article

InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics.

Published in:

Technical Physics Letters, 2019, v. 45, n. 11, p. 1092, doi. 10.1134/S1063785019110075

By:

Maleev, N. A.;
Vasil'ev, A. P.;
Kuzmenkov, A. G.;
Bobrov, M. A.;
Kulagina, M. M.;
Troshkov, S. I.;
Maleev, S. N.;
Belyakov, V. A.;
Petryakova, E. V.;
Kudryashova, Yu. P.;
Fefelova, E. L.;
Makartsev, I. V.;
Blokhin, S. A.;
Ahmedov, F. A.;
Egorov, A. V.;
Fefelov, A. G.;
Ustinov, V. M.

Publication type:

Article

Heterobarrier Varactors with Nonuniformly Doped Modulation Layers.

Published in:

Technical Physics Letters, 2019, v. 45, n. 10, p. 1063, doi. 10.1134/S1063785019100250

By:

Maleev, N. A.;
Bobrov, M. A.;
Kuzmenkov, A. G.;
Vasil'ev, A. P.;
Kulagina, M. M.;
Guseva, Yu. A.;
Blokhin, S. A.;
Ustinov, V. M.

Publication type:

Article

Specific Features of the Current–Voltage Characteristic of Microdisk Lasers Based on InGaAs/GaAs Quantum Well-Dots.

Published in:

Technical Physics Letters, 2019, v. 45, n. 10, p. 994, doi. 10.1134/S1063785019100158

By:

Zubov, F. I.;
Moiseev, E. I.;
Kornyshov, G. O.;
Kryzhanovskaya, N. V.;
Shernyakov, Yu. M.;
Payusov, A. S.;
Kulagina, M. M.;
Kalyuzhnyi, N. A.;
Mintairov, S. A.;
Maximov, M. V.;
Zhukov, A. E.

Publication type:

Article

Energy Consumption for High-Frequency Switching of a Quantum-Dot Microdisk Laser.

Published in:

Technical Physics Letters, 2019, v. 45, n. 8, p. 847, doi. 10.1134/S1063785019080315

By:

Zhukov, A. E.;
Moiseev, E. I.;
Kryzhanovskaya, N. V.;
Zubov, F. I.;
Mozharov, A. M.;
Kalyuzhnyi, N. A.;
Mintairov, S. A.;
Kulagina, M. M.;
Blokhin, S. A.;
Maximov, M. V.

Publication type:

Article

Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage Current.

Published in:

Technical Physics Letters, 2018, v. 44, n. 10, p. 862, doi. 10.1134/S1063785018100103

By:

Maleev, N. A.;
Bobrov, M. A.;
Kuzmenkov, A. G.;
Vasil'ev, A. P.;
Kulagina, M. M.;
Maleev, S. N.;
Blokhin, S. A.;
Nevedomsky, V. N.;
Ustinov, V. M.

Publication type:

Article

Power Characteristics and Temperature Dependence of the Angular Beam Divergence of Lasers with a Near-Surface Active Region.

Published in:

Technical Physics Letters, 2018, v. 44, n. 8, p. 675, doi. 10.1134/S1063785018080151

By:

Zhukov, A. E.;
Gordeev, N. Yu.;
Shernyakov, Yu. M.;
Payusov, A. S.;
Serin, A. A.;
Kulagina, M. M.;
Mintairov, S. A.;
Kalyuzhnyi, N. A.;
Maksimov, M. V.

Publication type:

Article

Single-Photon Source for the Red Spectral Range Based on a Nanoantenna with InAs/AlGaAs Quantum Dots.

Published in:

Radiophysics & Quantum Electronics, 2024, v. 67, n. 1, p. 72, doi. 10.1007/s11141-025-10354-x

By:

Veretennikov, A. I.;
Rakhlin, M. V.;
Galimov, A. I.;
Kazanov, D. R.;
Klimko, G. V.;
Sedova, I. V.;
Kulagina, M. M.;
Zadiranov, Yu. M.;
Guseva, Yu. A.;
Toropov, A. A.

Publication type:

Article

Formation of Structure and Properties of Aluminum-Matrix Precipitation-Hardened Structural Materials Fabricated by Liquid-Phase Method.

Published in:

Metal Science & Heat Treatment, 2020, v. 61, n. 11/12, p. 745, doi. 10.1007/s11041-020-00494-4

By:

Sorokina, S. A.;
Kulagina, M. P.

Publication type:

Article

Single-Photon Emission in the Telecom C-Band in a Micropillar Cavity with an InAs/InGaAs Quantum Dot.

Published in:

JETP Letters, 2025, v. 121, n. 3, p. 170, doi. 10.1134/S0021364024605116

By:

Veretennikov, A. I.;
Rakhlin, M. V.;
Serov, Yu. M.;
Galimov, A. I.;
Veyshtort, G. P.;
Sorokin, S. V.;
Klimko, G. V.;
Sedova, I. V.;
Maleev, N. A.;
Bobrov, M. A.;
Vasiliev, A. P.;
Kuzmenkov, A. G.;
Kulagina, M. M.;
Zadiranov, Yu. M.;
Troshkov, S. I.;
Salii, Yu. A.;
Berezina, D. S.;
Nikitina, E. V.;
Toropov, A. A.

Publication type:

Article

Highly Efficient Semiconductor Emitter of Single Photons in the Red Spectral Range.

Published in:

JETP Letters, 2019, v. 109, n. 3, p. 145, doi. 10.1134/S0021364019030135

By:

Rakhlin, M. V.;
Belyaev, K. G.;
Klimko, G. V.;
Sedova, I. V.;
Kulagina, M. M.;
Zadiranov, Yu. M.;
Troshkov, S. I.;
Guseva, Yu. A.;
Terent'ev, Ya. V.;
Ivanov, S. V.;
Toropov, A. A.

Publication type:

Article

Single-Photon Emitter at 80 K Based on a Dielectric Nanoantenna with a CdSe/ZnSe Quantum Dot.

Published in:

JETP Letters, 2018, v. 108, n. 3, p. 201, doi. 10.1134/S0021364018150109

By:

Rakhlin, M. V.;
Belyaev, K. G.;
Sorokin, S. V.;
Sedova, I. V.;
Kirilenko, D. A.;
Mozharov, A. M.;
Mukhin, I. S.;
Kulagina, M. M.;
Zadiranov, Yu. M.;
Ivanov, S. V.;
Toropov, A. A.

Publication type:

Article

Temperature characteristics of tilted wave lasers.

Published in:

Optical Engineering, 2016, v. 55, n. 11, p. 116102-1, doi. 10.1117/1.OE.55.11.116102

By:

Maximov, Mikhail V.;
Gordeev, Nikita Yu.;
Shernyakov, Yuri M.;
Payusov, Alexey S.;
Kalyuzhnyy, Nikolay A.;
Mintairov, Sergey A.;
Kulagina, Marina M.;
Zhukov, Alexey E.;
Shchukin, Vitaly A.;
Ledentsov, Nikolai N.

Publication type:

Article

Determination of the Temperature and Thermal Resistance of a Half-Disk Laser Diode by Measuring Pulsed Current-Voltage Characteristics.

Published in:

Semiconductors, 2024, v. 58, n. 2, p. 191, doi. 10.1134/S1063782624020179

By:

Zubov, F. I.;
Shernyakov, Yu. M.;
Beckman, A. A.;
Moiseev, E. I.;
Salii, Yu. A.;
Kulagina, M. M.;
Kalyuzhnyy, N. A.;
Mintairov, S. A.;
Nikolaev, A. V.;
Sherstnev, E. V.;
Maximov, M. V.

Publication type:

Article

Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers.

Published in:

Semiconductors, 2023, v. 57, n. 13, p. 604, doi. 10.1134/S1063782623030120

By:

Maximov, M. V.;
Shernyakov, Yu. M.;
Kornyshov, G. O.;
Simchuk, O. I.;
Gordeev, N. Yu.;
Beckman, A. A.;
Payusov, A. S.;
Mintairov, S. A.;
Kalyuzhnyy, N. A.;
Kulagina, M. M.;
Zhukov, A. E.

Publication type:

Article

Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots.

Published in:

Semiconductors, 2023, v. 57, n. 13, p. 594, doi. 10.1134/S1063782623050093

By:

Kryzhanovskaya, N. V.;
Blokhin, S. A.;
Makhov, I. S.;
Moiseev, E. I.;
Nadtochiy, A. M.;
Fominykh, N. A.;
Mintairov, S. A.;
Kaluyzhnyy, N. A.;
Guseva, Yu. A.;
Kulagina, M. M.;
Zubov, F. I.;
Kolodeznyi, E. S.;
Maximov, M. V.;
Zhukov, A. E.

Publication type:

Article

Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 333, doi. 10.1134/S1063782621030167

By:

Shernyakov, Yu. M.;
Gordeev, N. Yu.;
Payusov, A. S.;
Serin, A. A.;
Kornyshov, G. O.;
Nadtochiy, A. M.;
Kulagina, M. M.;
Mintairov, S. A.;
Kalyuzhnyy, N. A.;
Maximov, M. V.;
Zhukov, A. E.

Publication type:

Article

Lateral Mode Tuning in Coupled Ridge Waveguides Using Focused Ion Beam.

Published in:

Semiconductors, 2020, v. 54, n. 14, p. 1811, doi. 10.1134/S1063782620140237

By:

Payusov, A. S.;
Serin, A. A.;
Kornyshov, G. O.;
Kulagina, M. M.;
Mitrofanov, M. I.;
Voznyuk, G. V.;
Evtikhiev, V. P.;
Maximov, M. V.;
Gordeev, N. Yu.

Publication type:

Article

Ultimate Lasing Temperature of Microdisk Lasers.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 677, doi. 10.1134/S1063782620060172

By:

Zhukov, A. E.;
Kryzhanovskaya, N. V.;
Moiseev, E. I.;
Kulagina, M. M.;
Mintairov, S. A.;
Kalyuzhnyy, N. A.;
Nadtochiy, A. M.;
Maximov, M. V.

Publication type:

Article

Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots.

Published in:

Semiconductors, 2020, v. 54, n. 2, p. 263, doi. 10.1134/S1063782620020177

By:

Moiseev, E. I.;
Maximov, M. V.;
Kryzhanovskaya, N. V.;
Simchuk, O. I.;
Kulagina, M. M.;
Kadinskaya, S. A.;
Guina, M.;
Zhukov, A. E.

Publication type:

Article

Record Low Threshold Current Density in Quantum Dot Microdisk Laser.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1888, doi. 10.1134/S106378261914015X

By:

Moiseev, E. I.;
Kryzhanovskaya, N. V.;
Zubov, F. I.;
Mikhailovskii, M. S.;
Abramov, A. N.;
Maximov, M. V.;
Kulagina, M. M.;
Guseva, Yu. A.;
Livshits, D. A.;
Zhukov, A. E.

Publication type:

Article

InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm).

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1699, doi. 10.1134/S1063782619160218

By:

Nadtochiy, A. M.;
Shernyakov, Yu. M.;
Kulagina, M. M.;
Payusov, A. S.;
Gordeev, N. Yu.;
Maximov, M. V.;
Zhukov, A. E.;
Denneulin, T.;
Cherkashin, N.;
Shchukin, V. A.;
Ledentsov, N. N.

Publication type:

Article

Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1099, doi. 10.1134/S1063782619080220

By:

Zhukov, A. E.;
Moiseev, E. I.;
Kryzhanovskaya, N. V.;
Blokhin, S. A.;
Kulagina, M. M.;
Guseva, Yu. A.;
Mintairov, S. A.;
Kalyuzhnyy, N. A.;
Mozharov, A. M.;
Zubov, F. I.;
Maximov, M. V.

Publication type:

Article

Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance.

Published in:

Semiconductors, 2019, v. 53, n. 2, p. 200, doi. 10.1134/S1063782619020106

By:

Gordeev, N. Yu.;
Payusov, A. S.;
Mukhin, I. S.;
Serin, A. A.;
Kulagina, M. M.;
Guseva, Yu. A.;
Shernyakov, Yu. M.;
Zadiranov, Yu. M.;
Maximov, M. V.

Publication type:

Article

Diode Lasers with Near-Surface Active Region.

Published in:

Semiconductors, 2018, v. 52, n. 14, p. 1901, doi. 10.1134/S1063782618140233

By:

Payusov, A. S.;
Gordeev, N. Yu.;
Serin, A. A.;
Kulagina, M. M.;
Kalyuzhnyy, N. A.;
Mintairov, S. A.;
Maximov, M. V.;
Zhukov, A. E.

Publication type:

Article

Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks.

Published in:

Semiconductors, 2018, v. 52, n. 14, p. 1894, doi. 10.1134/S1063782618140166

By:

Lebedev, D. V.;
Vlasov, A. S.;
Kulagina, M. M.;
Troshkov, S. I.;
Guseva, Yu. A.;
Pelucchi, E.;
Gocalinska, A.;
Juska, G.;
Romanova, A. Yu.;
Buriak, P. A.;
Smirnov, V. I.;
Shelaev, A. V.;
Bykov, V. A.;
Mintairov, A. M.

Publication type:

Article

Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1462, doi. 10.1134/S1063782618110283

By:

Zhukov, A. E.;
Gordeev, N. Yu.;
Shernyakov, Yu. M.;
Payusov, A. S.;
Serin, A. A.;
Kulagina, M. M.;
Mintairov, S. A.;
Kalyuzhnyy, N. A.;
Maximov, M. V.

Publication type:

Article

Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors.

Published in:

Semiconductors, 2017, v. 51, n. 11, p. 1431, doi. 10.1134/S1063782617110185

By:

Maleev, N.;
Belyakov, V.;
Vasil'ev, A.;
Bobrov, M.;
Blokhin, S.;
Kulagina, M.;
Kuzmenkov, A.;
Nevedomskii, V.;
Guseva, Yu.;
Maleev, S.;
Ladenkov, I.;
Fefelova, E.;
Fefelov, A.;
Ustinov, V.

Publication type:

Article

Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 667, doi. 10.1134/S1063782617050116

By:

Karlina, L.;
Vlasov, A.;
Ber, B.;
Kazantsev, D.;
Timoshina, N.;
Kulagina, M.;
Smirnov, A.

Publication type:

Article

Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture.

Published in:

Semiconductors, 2016, v. 50, n. 10, p. 1390, doi. 10.1134/S1063782616100092

By:

Bobrov, M.;
Maleev, N.;
Blokhin, S.;
Kuzmenkov, A.;
Vasil'ev, A.;
Blokhin, A.;
Guseva, Yu.;
Kulagina, M.;
Zadiranov, Yu.;
Troshkov, S.;
Lysak, V.;
Ustinov, V.

Publication type:

Article

Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency.

Published in:

Semiconductors, 2016, v. 50, n. 10, p. 1408, doi. 10.1134/S1063782616100250

By:

Zubov, F.;
Kryzhanovskaya, N.;
Moiseev, E.;
Polubavkina, Yu.;
Simchuk, O.;
Kulagina, M.;
Zadiranov, Yu.;
Troshkov, S.;
Lipovskii, A.;
Maximov, M.;
Zhukov, A.

Publication type:

Article

Microdisk Injection Lasers for the 1.27-μm Spectral Range.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 390, doi. 10.1134/S1063782616030131

By:

Kryzhanovskaya, N.;
Maximov, M.;
Blokhin, S.;
Bobrov, M.;
Kulagina, M.;
Troshkov, S.;
Zadiranov, Yu.;
Lipovskii, A.;
Moiseev, E.;
Kudashova, Yu.;
Livshits, D.;
Ustinov, V.;
Zhukov, A.

Publication type:

Article

Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1425, doi. 10.1134/S1063782615110081

By:

Firsov, D.;
Vorobjev, L.;
Vinnichenko, M.;
Balagula, R.;
Kulagina, M.;
Vasil'iev, A.

Publication type:

Article

Thermal resistance of ultra-small-diameter disk microlasers.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 674, doi. 10.1134/S1063782615050279

By:

Zhukov, A.;
Kryzhanovskaya, N.;
Maximov, M.;
Lipovskii, A.;
Savelyev, A.;
Shostak, I.;
Moiseev, E.;
Kudashova, Yu.;
Kulagina, M.;
Troshkov, S.

Publication type:

Article

Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region.

Published in:

Semiconductors, 2013, v. 47, n. 10, p. 1387, doi. 10.1134/S1063782613100187

By:

Kryzhanovskaya, N.;
Zhukov, A.;
Nadtochy, A.;
Maximov, M.;
Moiseev, E.;
Kulagina, M.;
Savelev, A.;
Arakcheeva, E.;
Lipovskii, A.;
Zubov, F.;
Kapsalis, A.;
Mesaritakis, C.;
Syvridis, D.;
Mintairov, A.;
Livshits, D.

Publication type:

Article

Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 993, doi. 10.1134/S1063782613070166

By:

Maleev, N.;
Kuz'menkov, A.;
Kulagina, M.;
Zadiranov, Yu.;
Vasil'ev, A.;
Blokhin, S.;
Shulenkov, A.;
Troshkov, S.;
Gladyshev, A.;
Nadtochiy, A.;
Pavlov, M.;
Bobrov, M.;
Nazaruk, D.;
Ustinov, V.

Publication type:

Article

High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1040, doi. 10.1134/S106378261208012X

By:

Kryzhanovskaya, N.;
Zhukov, A.;
Nadtochy, A.;
Slovinsky, I.;
Maximov, M.;
Kulagina, M.;
Savelev, A.;
Arakcheeva, E.;
Zadiranov, Yu.;
Troshkov, S.;
Lipovskii, A.

Publication type:

Article

Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1352, doi. 10.1134/S1063782611100216

By:

Tikhomirov, V.;
Maleev, N.;
Kuzmenkov, A.;
Solov'ev, Yu.;
Gladyshev, A.;
Kulagina, M.;
Zemlyakov, V.;
Dudinov, K.;
Yankevich, V.;
Bobyl, A.;
Ustinov, V.

Publication type:

Article

Matrices of 960-nm vertical-cavity surface-emitting lasers.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 818, doi. 10.1134/S1063782611060133

By:

Maleev, N.;
Kuzmenkov, A.;
Shulenkov, A.;
Blokhin, S.;
Kulagina, M.;
Zadiranov, Yu.;
Tikhomirov, V.;
Gladyshev, A.;
Nadtochiy, A.;
Nikitina, E.;
Lott, J.;
Svede-Shvets, V.;
Ledentsov, N.;
Ustinov, V.

Publication type:

Article

Raising the quantum efficiency of AlGaInN flip-chip LEDs by Reactive ion etching of the outer side of SiC substrates.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 657, doi. 10.1134/S1063782610050192

By:

Smirnova, I. P.;
Markov, L. K.;
Arakcheeva, E. M.;
Pavluchenko, A. S.;
Zakgeim, D. A.;
Kulagina, M. M.

Publication type:

Article

Highly efficient photovoltaic cells based on In<sub>0.53</sub>Ga<sub>0.47</sub> as alloys with isovalent doping.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 228, doi. 10.1134/S1063782610020168

By:

Karlina, L. B.;
Vlasov, A. S.;
Kulagina, M. M.;
Rakova, E. P.;
Timoshina, N. Kh.;
Andreev, V. M.

Publication type:

Article

Reflecting p-contact based on thin ITO films for AlGaInN flip-chip LEDs.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1521, doi. 10.1134/S1063782609110219

By:

Markov, L. K.;
Smirnova, I. P.;
Pavlyuchenko, A. S.;
Arakcheeva, E. M.;
Kulagina, M. M.

Publication type:

Article