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Determination of the Temperature and Thermal Resistance of a Half-Disk Laser Diode by Measuring Pulsed Current-Voltage Characteristics.
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- Semiconductors, 2024, v. 58, n. 2, p. 191, doi. 10.1134/S1063782624020179
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- Article
Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage Current.
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- Technical Physics Letters, 2018, v. 44, n. 10, p. 862, doi. 10.1134/S1063785018100103
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Power Characteristics and Temperature Dependence of the Angular Beam Divergence of Lasers with a Near-Surface Active Region.
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- Technical Physics Letters, 2018, v. 44, n. 8, p. 675, doi. 10.1134/S1063785018080151
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- Article
A Design and New Functionality of Antiwaveguiding Vertical-Cavity Surface-Emitting Lasers for a Wavelength of 850 nm.
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- Technical Physics Letters, 2018, v. 44, n. 1, p. 36, doi. 10.1134/S1063785018010078
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- Article
The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers.
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- Technical Physics Letters, 2018, v. 44, n. 1, p. 28, doi. 10.1134/S1063785018010042
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- Article
Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium.
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- Technical Physics Letters, 2017, v. 43, n. 9, p. 849, doi. 10.1134/S106378501709022X
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- Article
A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range.
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- Technical Physics Letters, 2016, v. 42, n. 10, p. 1049, doi. 10.1134/S1063785016100199
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- Article
The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy.
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- Technical Physics Letters, 2015, v. 41, n. 10, p. 1006, doi. 10.1134/S1063785015100247
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- Article
The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots.
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- Technical Physics Letters, 2015, v. 41, n. 7, p. 654, doi. 10.1134/S106378501507010X
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- Article
Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate.
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- Technical Physics Letters, 2013, v. 39, n. 9, p. 830, doi. 10.1134/S1063785013090216
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- Article
Double-cross epitaxial overgrowth of nonpolar gallium nitride layers.
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- Technical Physics Letters, 2012, v. 38, n. 3, p. 265, doi. 10.1134/S1063785012030285
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- Article
Submicron surface relief fabrication technology for epitaxial GaAs structures with thin AlGaAs stop layers.
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- Technical Physics Letters, 2011, v. 37, n. 12, p. 1145, doi. 10.1134/S1063785011120200
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- Article
Formation of Structure and Properties of Aluminum-Matrix Precipitation-Hardened Structural Materials Fabricated by Liquid-Phase Method.
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- Metal Science & Heat Treatment, 2020, v. 61, n. 11/12, p. 745, doi. 10.1007/s11041-020-00494-4
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- Article
Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 17, p. 1354, doi. 10.1049/el.2015.2325
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- Article
Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures.
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- Technical Physics, 2017, v. 62, n. 7, p. 1082, doi. 10.1134/S1063784217070106
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- Article
The Formation of Developed Morphology on the Indium Phosphide Surface by Ion Argon Beam Sputtering.
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- Technical Physics, 2001, v. 46, n. 7, p. 892, doi. 10.1134/1.1387553
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- Article
Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers.
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- Photonics, 2023, v. 10, n. 10, p. 1090, doi. 10.3390/photonics10101090
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- Article
InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods.
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- Materials (1996-1944), 2020, v. 13, n. 10, p. 2315, doi. 10.3390/ma13102315
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- Article
Highly Efficient Semiconductor Emitter of Single Photons in the Red Spectral Range.
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- JETP Letters, 2019, v. 109, n. 3, p. 145, doi. 10.1134/S0021364019030135
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- Article
Single-Photon Emitter at 80 K Based on a Dielectric Nanoantenna with a CdSe/ZnSe Quantum Dot.
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- JETP Letters, 2018, v. 108, n. 3, p. 201, doi. 10.1134/S0021364018150109
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- Article
Novel Derivatives of Adamantyl-substituted Quinolin-6-amines and Synthesis of Imidazo[4,5-f]quinolines Therefrom.
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- Russian Journal of Organic Chemistry, 2019, v. 55, n. 8, p. 1234, doi. 10.1134/S1070428019080256
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- Article
Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters.
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- Semiconductors, 2017, v. 51, n. 5, p. 667, doi. 10.1134/S1063782617050116
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- Article
Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture.
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- Semiconductors, 2016, v. 50, n. 10, p. 1390, doi. 10.1134/S1063782616100092
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- Article
Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency.
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- Semiconductors, 2016, v. 50, n. 10, p. 1408, doi. 10.1134/S1063782616100250
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- Article
Microdisk Injection Lasers for the 1.27-μm Spectral Range.
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- Semiconductors, 2016, v. 50, n. 3, p. 390, doi. 10.1134/S1063782616030131
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- Article
Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells.
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- Semiconductors, 2015, v. 49, n. 11, p. 1425, doi. 10.1134/S1063782615110081
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- Article
Thermal resistance of ultra-small-diameter disk microlasers.
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- Semiconductors, 2015, v. 49, n. 5, p. 674, doi. 10.1134/S1063782615050279
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- Article
Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region.
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- Semiconductors, 2013, v. 47, n. 10, p. 1387, doi. 10.1134/S1063782613100187
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- Article
Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR.
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- Semiconductors, 2013, v. 47, n. 7, p. 993, doi. 10.1134/S1063782613070166
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- Article
High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots.
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- Semiconductors, 2012, v. 46, n. 8, p. 1040, doi. 10.1134/S106378261208012X
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- Article
Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures.
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- Semiconductors, 2011, v. 45, n. 10, p. 1352, doi. 10.1134/S1063782611100216
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- Article
Matrices of 960-nm vertical-cavity surface-emitting lasers.
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- Semiconductors, 2011, v. 45, n. 6, p. 818, doi. 10.1134/S1063782611060133
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- Article
Raising the quantum efficiency of AlGaInN flip-chip LEDs by Reactive ion etching of the outer side of SiC substrates.
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- Semiconductors, 2010, v. 44, n. 5, p. 657, doi. 10.1134/S1063782610050192
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- Article
Highly efficient photovoltaic cells based on In<sub>0.53</sub>Ga<sub>0.47</sub> as alloys with isovalent doping.
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- Semiconductors, 2010, v. 44, n. 2, p. 228, doi. 10.1134/S1063782610020168
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Reflecting p-contact based on thin ITO films for AlGaInN flip-chip LEDs.
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- Semiconductors, 2009, v. 43, n. 11, p. 1521, doi. 10.1134/S1063782609110219
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- Article
Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots.
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- Semiconductors, 2008, v. 42, n. 10, p. 1228, doi. 10.1134/S1063782608100151
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- Article
VCSELs based on arrays of sub-monolayer InGaAs quantum dots.
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- Semiconductors, 2006, v. 40, n. 5, p. 615, doi. 10.1134/S1063782606050186
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- Article
Thermophotovoltaic cells based on In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP heterostructures.
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- Semiconductors, 2006, v. 40, n. 3, p. 346, doi. 10.1134/S1063782606030171
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- Article
Stresses in Selectively Oxidized GaAs/(AlGa)<sub>x</sub>O<sub>y</sub> Structures.
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- Semiconductors, 2005, v. 39, n. 7, p. 748, doi. 10.1134/1.1992627
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- Article
High-Power Flip–Chip Blue Light-Emitting Diodes Based on AlGaInN.
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- Semiconductors, 2005, v. 39, n. 7, p. 851, doi. 10.1134/1.1992647
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- Article
Design and Fabrication Technology for Arrays for Vertical-Cavity Surface-Emitting Lasers.
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- Semiconductors, 2005, v. 39, n. 4, p. 462, doi. 10.1134/1.1900263
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- Article
Low-Threshold 1.3-μm Injection Lasers Based on Single InGaAsN Quantum Wells.
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- Semiconductors, 2004, v. 38, n. 5, p. 607, doi. 10.1134/1.1755901
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- Article
High Efficiency (η[sub D] > 80%) Long Wavelength (λ > 1.25 μm) Quantum Dot Diode Lasers on GaAs Substrates.
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- Semiconductors, 2002, v. 36, n. 11, p. 1315, doi. 10.1134/1.1521237
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- Article
Two-State Lasing in Injection Microdisks with InAs/InGaAs Quantum Dots.
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- Technical Physics Letters, 2023, v. 49, p. S330, doi. 10.1134/S1063785023010236
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- Article
Focused Ion Beam Milling of Ridge Waveguides of Edge-Emitting Semiconductor Lasers.
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- Technical Physics Letters, 2023, v. 49, p. S288, doi. 10.1134/S1063785023010285
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- Article
Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes.
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- Technical Physics Letters, 2023, v. 49, p. S215, doi. 10.1134/S1063785023900819
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- Article
Investigation of the Noise Characteristics of Vertical-Cavity Surface-Emitting Laser with a Rhomboidal Oxide Current Aperture for Use in a Cs-Based Compact Atomic Magnetometer.
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- Technical Physics Letters, 2023, v. 49, p. S184, doi. 10.1134/S1063785023900686
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- Article
An Investigation of the Sensitivity of a Microdisk Laser to a Change in the Refractive Index of the Environment.
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- Technical Physics Letters, 2022, v. 48, n. 2, p. 74, doi. 10.1134/S1063785022030063
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- Article
Energy Consumption at High-Frequency Modulation of an Uncooled InGaAs/GaAs/AlGaAs Microdisk Laser.
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- Technical Physics Letters, 2021, v. 47, n. 9, p. 685, doi. 10.1134/S1063785021070142
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- Article
Lasing of Injection Microdisks with InAs/InGaAs/GaAs Quantum Dots Transferred to Silicon.
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- Technical Physics Letters, 2020, v. 46, n. 8, p. 783, doi. 10.1134/S1063785020080295
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- Article