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Phase transitions and the nucleation of catalytic nanostructures under the action of chemical, physical, and mechanical factors.
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- Kinetics & Catalysis, 2008, v. 49, n. 1, p. 79, doi. 10.1134/S0023158408010102
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- Article
Epitaxial Silicon Carbide on Silicon. Method of Coordinated Substitution of Atoms (A Review).
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- Russian Journal of General Chemistry, 2022, v. 92, n. 4, p. 584, doi. 10.1134/S1070363222040028
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- Article
Natural and Anthropogenic Factors of Soils Chemical Composition on Shikotan Island (Kuril Islands).
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- Eurasian Soil Science, 2022, v. 55, n. 12, p. 1891, doi. 10.1134/S1064229322700077
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- Article
Soil Pollution with Polycyclic Aromatic Hydrocarbons and Petroleum Hydrocarbons in the North of Western Siberia: Spatial Pattern and Ecological Risk Assessment.
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- Eurasian Soil Science, 2022, v. 55, n. 11, p. 1647, doi. 10.1134/S1064229322110102
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- Article
Background Contents of Heavy Metals in Soils and Bottom Sediments in the North of Western Siberia.
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- Eurasian Soil Science, 2019, v. 52, n. 4, p. 380, doi. 10.1134/S106422931902011X
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- Article
A Model of Financial Pyramid with Quasi-Rational Participants.
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- Computational Mathematics & Mathematical Physics, 2023, v. 63, n. 3, p. 360, doi. 10.1134/S0965542523030089
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- Article
Methods of simplifying mathematical measurement models by means of nontraditional finite-field theory.
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- Measurement Techniques, 2007, v. 50, n. 10, p. 1028, doi. 10.1007/s11018-007-0191-3
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- Article
Top-Down Formation of Biocompatible SiC Nanotubes.
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- Semiconductors, 2024, v. 58, n. 3, p. 209, doi. 10.1134/S1063782624030035
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- Article
Studies of Structural and Mechanical Properties of AlGaN Thin Films on Nano-SiC/Si Hybrid Substrates.
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- Semiconductors, 2024, v. 58, n. 2, p. 130, doi. 10.1134/S1063782624020064
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- Article
Terahertz Emission from Silicon Carbide Nanostructures.
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- Semiconductors, 2023, v. 57, n. 8, p. 347, doi. 10.1134/S106378262309004X
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- Article
Registration of Terahertz Irradiation with Silicon Carbide Nanostructures.
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- Semiconductors, 2023, v. 57, n. 4, p. 203, doi. 10.1134/S1063782623070035
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- Article
Phase Transitions in Silicon-Carbide Epitaxial Layers Grown on a Silicon Substrate by the Method of the Coordinated Substitution of Atoms.
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- Semiconductors, 2022, v. 56, n. 6, p. 321, doi. 10.1134/S1063782622070016
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- Article
On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon.
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- Semiconductors, 2022, v. 56, n. 4, p. 253, doi. 10.1134/S1063782622040030
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- Article
Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces.
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- Semiconductors, 2021, v. 55, n. 2, p. 137, doi. 10.1134/S106378262102007X
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- Article
Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates.
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- Semiconductors, 2020, v. 54, n. 5, p. 596, doi. 10.1134/S1063782620050115
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- Article
Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures.
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- Semiconductors, 2020, v. 54, n. 4, p. 417, doi. 10.1134/S1063782620040168
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- Article
Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates.
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- Semiconductors, 2019, v. 53, n. 14, p. 1935, doi. 10.1134/S1063782619140239
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- Article
On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires.
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- Semiconductors, 2019, v. 53, n. 3, p. 350, doi. 10.1134/S1063782619030102
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- Article
Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers.
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- Semiconductors, 2019, v. 53, n. 2, p. 180, doi. 10.1134/S1063782619020143
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- Article
Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution.
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- Semiconductors, 2018, v. 52, n. 6, p. 802, doi. 10.1134/S1063782618060118
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- Article
MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates.
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- Semiconductors, 2018, v. 52, n. 5, p. 651, doi. 10.1134/S1063782618050251
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- Article
Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources.
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- Semiconductors, 2018, v. 52, n. 4, p. 462, doi. 10.1134/S1063782618040103
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- Article
MBE growth of ultrathin III-V nanowires on a highly mismatched SiC/Si(111) substrate.
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- Semiconductors, 2017, v. 51, n. 11, p. 1472, doi. 10.1134/S1063782617110252
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- Article
Photoelectric characteristics of silicon carbide-silicon structures grown by the atomic substitution method in a silicon crystal lattice.
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- Semiconductors, 2017, v. 51, n. 5, p. 621, doi. 10.1134/S1063782617050086
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- Article
Separation of III-N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types.
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- Semiconductors, 2017, v. 51, n. 3, p. 396, doi. 10.1134/S1063782617030149
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- Article
The C 1 s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface.
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- Semiconductors, 2016, v. 50, n. 10, p. 1327, doi. 10.1134/S1063782616100080
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- Article
Induced surface states of the ultrathin Ba/3 C-SiC(111) interface.
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- Semiconductors, 2016, v. 50, n. 4, p. 457, doi. 10.1134/S1063782616040072
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- Article
Anisotropy of the solid-state epitaxy of silicon carbide in silicon.
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- Semiconductors, 2013, v. 47, n. 12, p. 1551, doi. 10.1134/S1063782613120129
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- Article
Photoluminescence spectra of n-ZnO/ p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures.
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- Semiconductors, 2008, v. 42, n. 7, p. 766, doi. 10.1134/S1063782608070038
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- Article
A NEW METHOD FOR SYNTHESIS OF EPITAXIAL FILMS OF SILICON CARBIDE ON SAPPHIRE SUBSTRATES (α-Al<sub>2</sub>O<sub>3</sub>).
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- Reviews on Advanced Materials Science, 2018, v. 57, n. 1, p. 82, doi. 10.1515/rams-2018-0050
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- Article
GROWTH OF EPITAXIAL SiC LAYER ON Si (100) SURFACE OF n- AND p- TYPE OF CONDUCTIVITY BY THE ATOMS SUBSTITUTION METHOD.
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- Reviews on Advanced Materials Science, 2017, v. 52, n. 1/2, p. 29
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- Article
SEMIPOLAR GALLIUM NITRIDE ON SILICON: TECHNOLOGY AND PROPERTIES.
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- Reviews on Advanced Materials Science, 2014, v. 38, n. 1, p. 75
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- Article
Formation of pores in the optical fiber exposed to intense pulsed UV radiation.
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- Technical Physics, 2006, v. 51, n. 8, p. 1035, doi. 10.1134/S1063784206080135
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- Article
Influence of Selective Heating on the Kinetics of the Late Stage of First-Order Phase Transitions.
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- Technical Physics, 2001, v. 46, n. 3, p. 311, doi. 10.1134/1.1356482
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- Article
Inclusion of a nonzero volume fraction of the new phase in the kinetics of crystallization of melts.
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- Technical Physics, 1999, v. 44, n. 7, p. 786, doi. 10.1134/1.1259348
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- Article
Mechanisms and kinetics of the initial stages of growth of films grown by chemical vapor deposition.
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- Technical Physics, 1998, v. 43, n. 7, p. 846
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- Article
Formation and evolution of the phase composition and associated properties during the growth of thin films.
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- Technical Physics, 1997, v. 42, n. 10, p. 1212, doi. 10.1134/1.1258824
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- Article
Self-excited oscillatory regimes in the growth of thin films from a multicomponent vapor: dynamics and control.
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- Technical Physics, 1997, v. 42, n. 9, p. 1027, doi. 10.1134/1.1258739
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- Article
Recent Progress in Some Issues of Divertor Physics under Detachment Conditions.
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- Plasma Physics Reports, 2023, v. 49, n. 6, p. 657, doi. 10.1134/S1063780X23600494
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- Article
Possibilities of Spectral Diagnostics of Impurities and Hydrogen in the Divertor Plasma of the TRT.
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- Plasma Physics Reports, 2022, v. 48, n. 8, p. 905, doi. 10.1134/S1063780X22600621
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- Article
Fluxes in DEMO-FNS Fuel Cycle Systems with Allowance for Injection of D and T Pellets.
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- Plasma Physics Reports, 2022, v. 48, n. 3, p. 205, doi. 10.1134/S1063780X22030011
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- Article
Performance of the Conventional Divertor in TRT.
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- Plasma Physics Reports, 2021, v. 47, n. 12, p. 1238, doi. 10.1134/S1063780X21110209
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- Article
Tokamak with Reactor Technologies (TRT): Concept, Missions, Key Distinctive Features and Expected Characteristics.
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- Plasma Physics Reports, 2021, v. 47, n. 11, p. 1092, doi. 10.1134/S1063780X21110192
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- Article
Influence of Cross-Field Transport in a Divertor on Seeded Impurity Radiation and Divertor Plasma Detachment.
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- Plasma Physics Reports, 2020, v. 46, n. 6, p. 587, doi. 10.1134/S1063780X20060070
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- Article
Spontaneous Break of up–down Symmetry in a Symmetric Double-Null Divertor Configuration.
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- Plasma Physics Reports, 2019, v. 45, n. 7, p. 637, doi. 10.1134/S1063780X19070067
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- Article
SOLPS4.3 Modeling of Lithium Transport and Noncoronal Radiation in the T-15 Tokamak with Lithium Emitter−Collector Scheme in Use.
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- Plasma Physics Reports, 2018, v. 44, n. 7, p. 641, doi. 10.1134/S1063780X18070048
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- Article
Effects of Large-scale Atmospheric Oscillations on Hydrometeorological Conditions in the Danube River Basin in Winter.
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- Russian Meteorology & Hydrology, 2020, v. 45, n. 9, p. 630, doi. 10.3103/S1068373920090046
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- Article
Spatiotemporal Variability of Suspended Particulate Matter in the Surface Layer of the Open Part of the Black Sea.
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- Oceanology (00014370), 2021, v. 61, n. 2, p. 272, doi. 10.1134/S0001437021010124
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- Article
Variability of Particulate Organic Phosphorus in the Northwestern Part of the Black Sea.
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- Oceanology (00014370), 2018, v. 58, n. 3, p. 354, doi. 10.1134/S0001437018030098
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- Article
Sediment Flux of Particulate Organic Phosphorus in the Open Black Sea.
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- Oceanology (00014370), 2018, v. 58, n. 2, p. 240, doi. 10.1134/S0001437018020145
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- Article