Works matching AU Kukushkin, S.

Results: 150

Structural and elastoplastic properties of β-Ga2O3 films grown on hybrid SiC/Si substrates.

Published in:

Continuum Mechanics & Thermodynamics, 2018, v. 30, n. 5, p. 1059, doi. 10.1007/s00161-018-0662-6

By:

Osipov, A. V.;
Grashchenko, A. S.;
Kukushkin, S. A.;
Nikolaev, V. I.;
Osipova, E. V.;
Pechnikov, A. I.;
Soshnikov, I. P.

Publication type:

Article

Assessment of the Stress-Strain State of Pipelines Based on Measuring Magnetic Characteristics in Field Conditions.

Published in:

Russian Journal of Nondestructive Testing, 2024, v. 60, n. 12, p. 1396, doi. 10.1134/S1061830924700797

By:

Myznov, K. E.;
Vasilenko, O. N.;
Kostin, V. N.;
Tronza, V. S.;
Bondina, A. N.;
Kukushkin, S. S.;
Tryakina, N. Yu.;
Salomatin, A. S.

Publication type:

Article

Filtration of Measurement Data in Structural-Algorithmic Transformations.

Published in:

Measurement Techniques, 2018, v. 61, n. 3, p. 210, doi. 10.1007/s11018-018-1411-8

By:

Kuznetsov, V. I.;
Kukushkin, S. S.

Publication type:

Article

Methods for Detection and Correction of Errors in Data Based on Nontraditional Representation of Measurement Results by Image-Remainders.

Published in:

Measurement Techniques, 2017, v. 59, n. 12, p. 1239, doi. 10.1007/s11018-017-1122-6

By:

Kukushkin, S.;
Suprun, A.

Publication type:

Article

Analysis of the Influence of Interference Noise on the Results of Telemetry Measurements.

Published in:

Measurement Techniques, 2017, v. 59, n. 10, p. 1051, doi. 10.1007/s11018-017-1090-x

By:

Kukushkin, S.;
Kuznetsov, V.

Publication type:

Article

Ambiguity Resolution of Radio Measurements Using the Mathematics of the Constructive Theory of Finite Fields.

Published in:

Measurement Techniques, 2016, v. 59, n. 6, p. 671, doi. 10.1007/s11018-016-1028-8

By:

Kukushkin, S.

Publication type:

Article

Evaluating Measurements of Complex Dynamic Systems with Representation of Experimental Data by Image-Remainders.

Published in:

Measurement Techniques, 2016, v. 59, n. 2, p. 111, doi. 10.1007/s11018-016-0926-0

By:

Kukushkin, S.

Publication type:

Article

Theoretical principles for synthesizing an ultraoperator for the comprehensive processing of remote monitoring data.

Published in:

Measurement Techniques, 2009, v. 52, n. 7, p. 699, doi. 10.1007/s11018-009-9331-2

By:

S. Kukushkin;
A. Potyupkin;
V. Antipov

Publication type:

Article

New methods and technologies for processing video images in full-scale tests of complex technical systems.

Published in:

Measurement Techniques, 2009, v. 52, n. 4, p. 360, doi. 10.1007/s11018-009-9286-3

By:

S. Kukushkin;
N. Gulyi

Publication type:

Article

Methods of simplifying mathematical measurement models by means of nontraditional finite-field theory.

Published in:

Measurement Techniques, 2007, v. 50, n. 10, p. 1028, doi. 10.1007/s11018-007-0191-3

By:

S. Kukushkin;
O. Khromov

Publication type:

Article

Evaluating Mineral Phosphorus Fluxes in Eutrophic Waters of the Northwestern Black Sea.

Published in:

Water Resources, 2020, v. 47, n. 1, p. 137, doi. 10.1134/S009780782001011X

By:

Parkhomenko, A. V.;
Kukushkin, A. S.

Publication type:

Article

Peculiarities of Nucleation and Growth of InGaN Nanowires on SiC/Si Substrates by HVPE.

Published in:

Technical Physics Letters, 2024, v. 50, n. 2, p. 133, doi. 10.1134/S1063785023170145

By:

Kukushkin, S. A.;
Osipov, A. V.;
Redkov, A. V.;
Stozharov, V. M.;
Ubiyvovk, E. V.;
Sharofidinov, Sh. Sh.

Publication type:

Article

Thin-Film LED based on AlInGaN Layers Grown on Hybrid SiC/Si Substrates.

Published in:

Technical Physics Letters, 2023, v. 49, p. S338, doi. 10.1134/S106378502301025X

By:

Markov, L. K.;
Kukushkin, S. A.;
Pavluchenko, A. S.;
Smirnova, I. P.;
Sakharov, A. V.;
Nikolaev, A. E.;
Grashchenko, A. S.;
Osipov, A. V.;
Tsatsul'nikov, A. F.

Publication type:

Article

Thermal Conductivity of Hybrid SiC/Si Substrates for the Growth of LED Heterostructures.

Published in:

Technical Physics Letters, 2023, v. 49, p. S327, doi. 10.1134/S1063785023010200

By:

Kukushkin, S. A.;
Markov, L. K.;
Osipov, A. V.;
Svyatets, G. V.;
Chernyakov, A. E.;
Pavlov, S. I.

Publication type:

Article

Growth of SiC, AlN, and GaN Films on Silicon Parts of Arbitrary Geometry for Microelectromechanical Applications.

Published in:

Technical Physics Letters, 2023, v. 49, p. S319, doi. 10.1134/S1063785023010182

By:

Kondratenko, T. T.;
Grashchenko, A. S.;
Osipov, A. V.;
Redkov, A. V.;
Ubyivovk, E. V.;
Sharofidinov, Sh. Sh.;
Kukushkin, S. A.

Publication type:

Article

Phase Transformations in Gallium Oxide Layers.

Published in:

Technical Physics Letters, 2023, v. 49, p. S227, doi. 10.1134/S1063785023900856

By:

Osipov, A. V.;
Sharofidinov, Sh. Sh.;
Kremleva, A. V.;
Osipova, E. V.;
Smirnov, A. M.;
Kukushkin, S. A.

Publication type:

Article

MBE Growth and Optical Properties of GaN, InN, and A<sup>3</sup> B<sup>5</sup> Nanowires on SiC/Si(111) Hybrid Substrate.

Published in:

Advances in Condensed Matter Physics, 2018, p. 1, doi. 10.1155/2018/1040689

By:

Reznik, R. R.;
Kotlyar, K. P.;
Ilkiv, I. V.;
Khrebtov, A. I.;
Soshnikov, I. P.;
Kukushkin, S. A.;
Osipov, A. V.;
Nikitina, E. V.;
Cirlin, G. E.

Publication type:

Article

The Role of 'Momentum Removal' in Divertor Detachment.

Published in:

Contributions to Plasma Physics, 2016, v. 56, n. 6-8, p. 711, doi. 10.1002/ctpp.201610048

By:

Kukushkin, A. S.;
Pacher, H. D.

Publication type:

Article

Verification of the 2D Tokamak Edge Modelling Codes for Conditions of Detached Divertor Plasma.

Published in:

Contributions to Plasma Physics, 2010, v. 50, n. 3-5, p. 292, doi. 10.1002/ctpp.201010048

By:

Kotov, V.;
Reiter, D.;
Coster, D. P.;
Kukushkin, A. S.

Publication type:

Article

Radiation Absorption Effects in B2-EIRENE Divertor Modelling.

Published in:

Contributions to Plasma Physics, 2006, v. 46, n. 7-9, p. 635, doi. 10.1002/ctpp.200610056

By:

Kotov, V.;
Reiter, D.;
Kukushkin, A. S.;
Pacher, H. D.;
Börner, P.;
Wiesen, S.

Publication type:

Article

Critical Evaluation of the Determination of the SOL Transport Mechanism from a Statistical Examination of Experimental Data.

Published in:

Contributions to Plasma Physics, 2006, v. 46, n. 7-9, p. 545, doi. 10.1002/ctpp.200610042

By:

Kukushkin, A. S.;
Pacher, H. D.

Publication type:

Article

2D Modelling of the Edge Plasma in ITER.

Published in:

Contributions to Plasma Physics, 1998, v. 38, n. 1/2, p. 20, doi. 10.1002/ctpp.2150380103

By:

Kukushkin, A. S.;
Pacher, H. D.;
Coster, D.;
Janeschitz, G.;
Reiter, D.;
Schneider, R.

Publication type:

Article

Implementation of Non-local Transport Model into 2D Fluid Code.

Published in:

Contributions to Plasma Physics, 1994, v. 34, n. 2/3, p. 204, doi. 10.1002/ctpp.2150340218

By:

Kukushkin, A. S.;
Runov, A. M.

Publication type:

Article

Application of BGK Collision Operator for Kinetic Correction of Fluid Models.

Published in:

Contributions to Plasma Physics, 1994, v. 34, n. 2/3, p. 216, doi. 10.1002/ctpp.2150340220

By:

Igitkhanov, Yu. L.;
Kukushkin, A. S.;
Runov, A. M.;
Chodura, R.

Publication type:

Article

Feasibility of 'Gas Target' Mode of Divertor Operation in Iter.

Published in:

Contributions to Plasma Physics, 1994, v. 34, n. 2/3, p. 282, doi. 10.1002/ctpp.2150340230

By:

Kukushkin, A. S.

Publication type:

Article

Effect of Boundary Conditions on the Performance of Divertor Plasma.

Published in:

Contributions to Plasma Physics, 1992, v. 32, n. 3/4, p. 314, doi. 10.1002/ctpp.2150320322

By:

Igitkhanov, Yu. L.;
Kukushkin, A. S.;
Pozharov, V. A.

Publication type:

Article

Evaluation of Environmental Transformation in Areas of Hydrocarbon Deposits in the North of Western Siberia.

Published in:

Contemporary Problems of Ecology, 2018, v. 11, n. 1, p. 99, doi. 10.1134/S1995425518010109

By:

Opekunova, M. G.;
Opekunov, A. Yu.;
Kukushkin, S. Yu.;
Arestova, I. Yu.

Publication type:

Article

Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 137, doi. 10.1134/S106378262102007X

By:

Bagraev, N. T.;
Kukushkin, S. A.;
Osipov, A. V.;
Romanov, V. V.;
Klyachkin, L. E.;
Malyarenko, A. M.;
Khromov, V. S.

Publication type:

Article

Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates.

Published in:

Semiconductors, 2020, v. 54, n. 5, p. 596, doi. 10.1134/S1063782620050115

By:

Seredin, P. V.;
Goloshchapov, D. L.;
Zolotukhin, D. S.;
Lenshin, A. S.;
Khudyakov, Yu. Yu.;
Mizerov, A. M.;
Timoshnev, S. N.;
Arsentyev, I. N.;
Beltyukov, A. N.;
Leiste, Harald;
Kukushkin, S. A.

Publication type:

Article

Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 417, doi. 10.1134/S1063782620040168

By:

Seredin, P. V.;
Goloshchapov, D. L.;
Zolotukhin, D. S.;
Lenshin, A. S.;
Mizerov, A. M.;
Timoshnev, S. N.;
Nikitina, E. V.;
Arsentiev, I. N.;
Kukushkin, S. A.

Publication type:

Article

Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1935, doi. 10.1134/S1063782619140239

By:

Timoshnev, S. N.;
Mizerov, A. M.;
Lapushkin, M. N.;
Kukushkin, S. A.;
Bouravleuv, A. D.

Publication type:

Article

On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires.

Published in:

Semiconductors, 2019, v. 53, n. 3, p. 350, doi. 10.1134/S1063782619030102

By:

Koryakin, A. A.;
Kukushkin, S. A.;
Sibirev, N. V.

Publication type:

Article

Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers.

Published in:

Semiconductors, 2019, v. 53, n. 2, p. 180, doi. 10.1134/S1063782619020143

By:

Kukushkin, S. A.;
Mizerov, A. M.;
Grashchenko, A. S.;
Osipov, A. V.;
Nikitina, E. V.;
Timoshnev, S. N.;
Bouravlev, A. D.;
Sobolev, M. S.

Publication type:

Article

Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 802, doi. 10.1134/S1063782618060118

By:

Kalinkin, I. P.;
Kukushkin, S. A.;
Osipov, A. V.

Publication type:

Article

MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 651, doi. 10.1134/S1063782618050251

By:

Reznik, R. R.;
Kotlyar, K. P.;
Soshnikov, I. P.;
Kukushkin, S. A.;
Osipov, A. V.;
Cirlin, G. E.

Publication type:

Article

Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources.

Published in:

Semiconductors, 2018, v. 52, n. 4, p. 462, doi. 10.1134/S1063782618040103

By:

Cirlin, G. E.;
Reznik, R. R.;
Shtrom, I. V.;
Khrebtov, A. I.;
Samsonenko, Yu. B.;
Kukushkin, S. A.;
Kasama, T.;
Akopian, N.;
Leonardo, L.

Publication type:

Article

MBE growth of ultrathin III-V nanowires on a highly mismatched SiC/Si(111) substrate.

Published in:

Semiconductors, 2017, v. 51, n. 11, p. 1472, doi. 10.1134/S1063782617110252

By:

Reznik, R.;
Kotlyar, K.;
Shtrom, I.;
Soshnikov, I.;
Kukushkin, S.;
Osipov, A.;
Cirlin, G.

Publication type:

Article

Photoelectric characteristics of silicon carbide-silicon structures grown by the atomic substitution method in a silicon crystal lattice.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 621, doi. 10.1134/S1063782617050086

By:

Grashchenko, A.;
Feoktistov, N.;
Osipov, A.;
Kalinina, E.;
Kukushkin, S.

Publication type:

Article

Separation of III-N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 396, doi. 10.1134/S1063782617030149

By:

Kukushkin, S.;
Osipov, A.;
Red'kov, A.

Publication type:

Article

The C 1 s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface.

Published in:

Semiconductors, 2016, v. 50, n. 10, p. 1327, doi. 10.1134/S1063782616100080

By:

Benemanskaya, G.;
Dementev, P.;
Kukushkin, S.;
Lapushkin, M.;
Osipov, A.;
Senkovskiy, B.

Publication type:

Article

Induced surface states of the ultrathin Ba/3 C-SiC(111) interface.

Published in:

Semiconductors, 2016, v. 50, n. 4, p. 457, doi. 10.1134/S1063782616040072

By:

Benemanskaya, G.;
Dementev, P.;
Kukushkin, S.;
Lapushkin, M.;
Senkovskiy, B.;
Timoshnev, S.

Publication type:

Article

Anisotropy of the solid-state epitaxy of silicon carbide in silicon.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1551, doi. 10.1134/S1063782613120129

By:

Kukushkin, S. A.;
Osipov, A. V.

Publication type:

Article

Photoluminescence spectra of n-ZnO/ p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 766, doi. 10.1134/S1063782608070038

By:

Mezdrogina, M. M.;
Krivolapchuk, V. V.;
Feoktistov, N. A.;
Danilovskiĭ, É. Yu.;
Kuzmin, R. V.;
Razumov, S. V.;
Kukushkin, S. A.;
Osipov, A. V.

Publication type:

Article

The Nucleation of Coherent Semiconductor Islands during the Stranski–Krastanov Growth Induced by Elastic Strains.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1097, doi. 10.1134/1.1513851

By:

Kukushkin, S. A.;
Osipov, A. V.;
Schmitt, F.;
Hess, P.

Publication type:

Article

Phase transitions and the nucleation of catalytic nanostructures under the action of chemical, physical, and mechanical factors.

Published in:

Kinetics & Catalysis, 2008, v. 49, n. 1, p. 79, doi. 10.1134/S0023158408010102

By:

Kukushkin, S. A.;
Osipov, A. V.

Publication type:

Article

Formation of pores in the optical fiber exposed to intense pulsed UV radiation.

Published in:

Technical Physics, 2006, v. 51, n. 8, p. 1035, doi. 10.1134/S1063784206080135

By:

Kukushkin, S.;
Osipov, A.;
Shlyagin, M.

Publication type:

Article

Influence of Selective Heating on the Kinetics of the Late Stage of First-Order Phase Transitions.

Published in:

Technical Physics, 2001, v. 46, n. 3, p. 311, doi. 10.1134/1.1356482

By:

Ambrok, A. G.;
Kalashnikov, E. V.;
Kukushkin, S. A.

Publication type:

Article

Mineralogical–Geochemical Characteristics of the Snow Cover in Areas with Mining and Ore-Processing Facilities.

Published in:

Geochemistry International, 2021, v. 59, n. 7, p. 711, doi. 10.1134/S0016702921060070

By:

Opekunov, A. Yu.;
Opekunova, M. G.;
Kukushkin, S. Yu.;
Yanson, S. Yu.;
Arestova, I. Yu.;
Sheinerman, N. A.;
Spasskii, V. V.;
Papyan, E. E.;
Elsukova, E. Yu.

Publication type:

Article

Nanoscale Single-Crystal Silicon Carbide on Silicon and Unique Properties of This Material.

Published in:

Inorganic Materials, 2021, v. 57, n. 13, p. 1319, doi. 10.1134/S0020168521130021

By:

Kukushkin, S. A.;
Osipov, A. V.

Publication type:

Article

Seroprevalence of Lawsonia intracellularis, Mycoplasma hyopneumoniae and PCV2 in commercial pig farms in Russia.

Published in:

Veterinary Record Case Reports, 2013, v. 1, n. 1, p. 1, doi. 10.1136/vetreccr.100874rep

By:

Kukushkin, S.;
Okovytaya, T.

Publication type:

Article