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Highly Robust Atomic Layer Deposition‐Indium Gallium Zinc Oxide Thin‐Film Transistors with Hybrid Gate Insulator Fabricated via Two‐Step Atomic Layer Process for High‐Density Integrated All‐Oxide Vertical Complementary Metal‐Oxide‐Semiconductor Applications
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- Small Structures, 2024, v. 5, n. 2, p. 1, doi. 10.1002/sstr.202300375
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Development of Reflow Fill of CGeSbTe Films for Sub‐20 nm Cells in 3D Cross‐Point Memory.
- Published in:
- Advanced Materials Technologies, 2023, v. 8, n. 1, p. 1, doi. 10.1002/admt.202200887
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- Article