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Features of Formation of In<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N Bulk Layers in the Immiscibility Gap of Solid Solutions (x ~ 0.6) by Molecular Beam Epitaxy with Plasma Nitrogen Activation.
- Published in:
- Semiconductors, 2024, v. 58, n. 3, p. 231, doi. 10.1134/S1063782624030072
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- Article
Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate.
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- Technical Physics Letters, 2018, v. 44, n. 8, p. 735, doi. 10.1134/S1063785018080175
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Laser Generation at Wavelengths 4.1–5.1 μm of Cd<sub>x</sub>Hg<sub>1–x</sub>Te/Cd<sub>y</sub>Hg<sub>1–y</sub>Te Quantum-Well Heterostructures with Microdisk Resonators.
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- Journal of Applied Spectroscopy, 2022, v. 89, n. 5, p. 844, doi. 10.1007/s10812-022-01435-0
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- Article
Stimulated Emission at a Wavelength of 2.86 μm from In(Sb, As)/In(Ga, Al)As/GaAs Metamorphic Quantum Wells under Optical Pumping.
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- JETP Letters, 2019, v. 110, n. 5, p. 313, doi. 10.1134/S0021364019170120
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Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature.
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- Semiconductors, 2009, v. 43, n. 3, p. 313, doi. 10.1134/S1063782609030105
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Comparative analysis of photoluminescence and electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) island.
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- Semiconductors, 2008, v. 42, n. 3, p. 286, doi. 10.1134/S1063782608030081
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- Article
Erbium ion electroluminescence in p <sup>++</sup>/ n <sup>+</sup>/ n-Si:Er/ n <sup>++</sup> silicon diode structures.
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- Semiconductors, 2007, v. 41, n. 11, p. 1312, doi. 10.1134/S1063782607110073
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- Article
Investigation of Stimulated Emission from HgTe/CdHgTe Quantum-Well Heterostructures in the 3–5 μm Atmospheric Transparency Window.
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- Semiconductors, 2020, v. 54, n. 10, p. 1365, doi. 10.1134/S106378262010019X
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- Article
Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons.
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- Semiconductors, 2020, v. 54, n. 9, p. 1069, doi. 10.1134/S1063782620090195
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- Article
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD.
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- Semiconductors, 2019, v. 53, n. 8, p. 1138, doi. 10.1134/S1063782619080037
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- Article
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates.
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- Semiconductors, 2018, v. 52, n. 12, p. 1547, doi. 10.1134/S1063782618120060
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Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics.
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- Semiconductors, 2018, v. 52, n. 11, p. 1442, doi. 10.1134/S1063782618110167
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- Article
Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate.
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- Semiconductors, 2018, v. 52, n. 5, p. 602, doi. 10.1134/S1063782618050299
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- Article