Found: 19
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Photoluminescence and composition of amorphous As<sub>2</sub>Se<sub>3</sub> films modified with Er( thd)<sub>3</sub> complex compound.
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- Semiconductors, 2007, v. 41, n. 8, p. 914, doi. 10.1134/S106378260708009X
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- Article
The Effect of Erbium and Oxygen on the Photoluminescence Intensity of Erbium and the Composition of a-SiO<sub>x</sub>:(H, Er, O) Films Deposited by DC Magnetron Sputtering.
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- Semiconductors, 2005, v. 39, n. 8, p. 944, doi. 10.1134/1.2010690
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Photoluminescence at 1.5 μm from Single-Crystal Silicon Layers Subjected to Mechanical Treatment.
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- Semiconductors, 2003, v. 37, n. 12, p. 1380, doi. 10.1134/1.1634657
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- Article
Synthesis and Physical Properties of Si(Ge)–Se–Te Glasses.
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- Semiconductors, 2003, v. 37, n. 7, p. 795, doi. 10.1134/1.1592852
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Optical and Electrical Properties of Polyamide Acid and Metal–Polymer Complex Based on Terbium.
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- Semiconductors, 2003, v. 37, n. 7, p. 816, doi. 10.1134/1.1592856
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- Article
A Study of the Effect of Oxygen on the Intensity of Erbium Photoluminescence in Amorphous SiO[sub x]:(H, Er) Films Formed by DC Magnetron Sputtering.
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- Semiconductors, 2003, v. 37, n. 7, p. 825, doi. 10.1134/1.1592859
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- Article
The Formation of β-FeSi[sub 2] Precipitates in Microcrystalline Si.
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- Semiconductors, 2002, v. 36, n. 11, p. 1235, doi. 10.1134/1.1521222
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A Pulsed Synthesis of β-FeSi[sub 2] Layers on Silicon Implanted with Fe[sup +] Ions.
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- Semiconductors, 2001, v. 35, n. 11, p. 1263, doi. 10.1134/1.1418069
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- Article
The Influence of Erbium on Electrical and Photoelectric Properties of Amorphous Silicon Produced by Radio-Frequency Silane Decomposition.
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- Semiconductors, 2000, v. 34, n. 7, p. 829, doi. 10.1134/1.1188083
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- Article
Modifications of the Structure and Electrical Parameters of the Films of Amorphous Hydrogenated Silicon Implanted with Si[sup +] Ions.
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- Semiconductors, 2000, v. 34, n. 1, p. 87, doi. 10.1134/1.1187951
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- Article
The Influence of Local Surroundings of Er Atoms on the Kinetics of Decay of Er Photoluminescence in Amorphous Hydrogenated Silicon.
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- Semiconductors, 2000, v. 34, n. 1, p. 92, doi. 10.1134/1.1187952
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- Article
Influence of the substrate temperature and annealing on the 1.54-μm erbium photoluminescence of a-Si:H films obtained using a glow discharge.
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- Semiconductors, 1999, v. 33, n. 2, p. 177, doi. 10.1134/1.1187888
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- Article
Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 μm) in erbium-doped a-Si:H films.
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- Semiconductors, 1998, v. 32, n. 11, p. 1234, doi. 10.1134/1.1187597
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- Article
Luminescence of erbium in amorphous hydrogenated silicon obtained by the glow-discharge method.
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- Semiconductors, 1998, v. 32, n. 8, p. 884, doi. 10.1134/1.1187477
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- Article
Defects and short- and medium-range order in the structural network of hydrogenated amorphous silicon
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- Semiconductors, 1998, v. 32, n. 7, p. 779, doi. 10.1134/1.1187504
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- Article
Staebler-Wronski effect as a function of the Fermi level position and structure of nondoped, amorphous, hydrated silicon
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- Semiconductors, 1998, v. 32, n. 4, p. 434, doi. 10.1134/1.1187410
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Characteristic structural features of amorphous hydrated silicon films deposited by direct-currect decomposition of silane in a magnetic field.
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- Semiconductors, 1997, v. 31, n. 7, p. 691, doi. 10.1134/1.1187067
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- Article
On the relaxational characteristics and stability of a Si:H films grown at high temperatures.
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- Semiconductors, 1997, v. 31, n. 5, p. 452, doi. 10.1134/1.1187193
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- Article
Structural transformations in thin Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> films.
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- Inorganic Materials, 2009, v. 45, n. 4, p. 361, doi. 10.1134/S0020168509040050
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- Article