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Switching between generation of two quantum states in quantum-well laser diodes.
Published in:
Technical Physics Letters, 2008, v. 34, n. 8, p. 708, doi. 10.1134/S1063785008080257
By:
- Sokolovskiĭ, G. S.;
- Vinokurov, D. A.;
- Deryagin, A. G.;
- Dudelev, V. V.;
- Kuchinskiĭ, V. I.;
- Losev, S. N.;
- Lyutetskii, A. V.;
- Pikhtin, N. A.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Tarasov, I. S.
Publication type:
Article
High-power external-cavity AlGaAs/GaAs/InGaAs quantum-dimensional heterolasers (λ = 1.06 μm).
Published in:
Technical Physics Letters, 2008, v. 34, n. 3, p. 187, doi. 10.1134/S1063785008030036
By:
- Vinokurov, D. A.;
- Deryagin, A. G.;
- Dyudelev, V. V.;
- Kuchinskiĭ, V. I.;
- Lyutetskiĭ, A. V.;
- Pikhtin, N. A.;
- Sokolovskiĭ, G. S.;
- Stankevich, A. L.;
- Tarasov, I. S.
Publication type:
Article
Self-assembling of zinc and tellurium impurities in zinc-blende MgS.
Published in:
Technical Physics Letters, 2006, v. 32, n. 9, p. 818, doi. 10.1134/S1063785006090240
By:
- Elyukhina, O. V.;
- Sokolovskiĭ, G. S.;
- Kuchinskiĭ, V. I.;
- Elyukhin, V. A.
Publication type:
Article
VCSELs based on arrays of sub-monolayer InGaAs quantum dots.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 615, doi. 10.1134/S1063782606050186
By:
- Blokhin, S. A.;
- Maleev, N. A.;
- Kuz'menkov, A. G.;
- Shernyakov, Yu. M.;
- Novikov, I. I.;
- Gordeev, N. Yu.;
- Dyudelev, V. V.;
- Sokolovskiĭ, G. S.;
- Kuchinskiĭ, V. I.;
- Kulagina, M. M.;
- Maximov, M. V.;
- Ustinov, V. M.;
- Kovsh, A. R.;
- Mikhrin, S. S.;
- Ledentsov, N. N.
Publication type:
Article

Found: 4

Switching between generation of two quantum states in quantum-well laser diodes.

High-power external-cavity AlGaAs/GaAs/InGaAs quantum-dimensional heterolasers (λ = 1.06 μm).

Self-assembling of zinc and tellurium impurities in zinc-blende MgS.

VCSELs based on arrays of sub-monolayer InGaAs quantum dots.