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The Topological Hall Effect in CoGd Films Controlled by Hydrogen Migration under Gate Voltage.
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- Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300752
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Reversible and irreversible domain wall dynamics in [011]<sub>C</sub> oriented relaxor ferroelectric single crystals.
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- Journal of the American Ceramic Society, 2020, v. 103, n. 5, p. 3257, doi. 10.1111/jace.16910
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- Article