Found: 10
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A quantum light-emitting diode for the standard telecom window around 1,550 nm.
- Published in:
- Nature Communications, 2018, v. 9, n. 1, p. 1, doi. 10.1038/s41467-018-03251-7
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- Article
SCANNING E-BEAM LONGITUDINALLY PUMPED RT OPERABLE LASER BASED ON MOVPE-GROWN GaInP/AlGaInP MQW STRUCTURE.
- Published in:
- International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 193, doi. 10.1142/S0219581X04001985
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- Article
High temperature AlInP X-ray spectrometers.
- Published in:
- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-48394-9
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- Article
InGaP electron spectrometer for high temperature environments.
- Published in:
- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-47531-8
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- Article
Structural analysis of strained quantum dots using nuclear magnetic resonance.
- Published in:
- Nature Nanotechnology, 2012, v. 7, n. 10, p. 646, doi. 10.1038/nnano.2012.142
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- Article
Element-sensitive measurement of the hole-nuclear spin interaction in quantum dots.
- Published in:
- Nature Physics, 2013, v. 9, n. 2, p. 74, doi. 10.1038/nphys2514
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- Article
Twinning in GaAs nanowires on patterned GaAs(111)B.
- Published in:
- Crystal Research & Technology, 2015, v. 50, n. 1, p. 62, doi. 10.1002/crat.201400166
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- Article
Quantum teleportation using highly coherent emission from telecom C-band quantum dots.
- Published in:
- NPJ Quantum Information, 2020, v. 6, n. 1, p. 1, doi. 10.1038/s41534-020-0249-5
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- Article
Zinc telluride epilayers and CdZnTe/ZnTe quantum wells grown by molecular-beam epitaxy on GaAs(100) substrates using solid-phase crystallization of an amorphous ZnTe seed layer.
- Published in:
- Semiconductors, 1999, v. 33, n. 7, p. 744, doi. 10.1134/1.1187774
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- Article
Study of ZnCdSe/ZnSe quantum wells grown by molecular-beam epitaxy on ZnSe substrates.
- Published in:
- Semiconductors, 1997, v. 31, n. 6, p. 545
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- Article