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Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals.
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- Semiconductors, 2020, v. 54, n. 10, p. 1352, doi. 10.1134/S1063782620100334
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Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals.
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- Semiconductors, 2020, v. 54, n. 8, p. 975, doi. 10.1134/S1063782620080254
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Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates.
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- Semiconductors, 2019, v. 53, n. 10, p. 1318, doi. 10.1134/S1063782619100154
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On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates.
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- Semiconductors, 2018, v. 52, n. 12, p. 1547, doi. 10.1134/S1063782618120060
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Stimulated Emission in the 1.3-1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III-V Heterostructures on Silicon Substrates.
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- Semiconductors, 2018, v. 52, n. 11, p. 1495, doi. 10.1134/S1063782618110143
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Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures.
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- Semiconductors, 2010, v. 44, n. 3, p. 329, doi. 10.1134/S1063782610030103
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Optically active centers in Si/Si<sub>1 − x</sub>Ge<sub> x</sub>:Er heterostructures containing Er<sup>3+</sup> ions.
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- Semiconductors, 2009, v. 43, n. 7, p. 877, doi. 10.1134/S1063782609070094
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Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature.
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- Semiconductors, 2009, v. 43, n. 3, p. 313, doi. 10.1134/S1063782609030105
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Comparative analysis of photoluminescence and electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) island.
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- Semiconductors, 2008, v. 42, n. 3, p. 286, doi. 10.1134/S1063782608030081
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Influence of small miscuts on self-ordered growth of Ge nanoislands.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 4, p. 389
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Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate.
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- Technical Physics Letters, 2018, v. 44, n. 8, p. 735, doi. 10.1134/S1063785018080175
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HRTEM study of growth-correlated properties of (Si,Ge) islands.
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- Microscopy & Microanalysis, 2003, v. 9, p. 220, doi. 10.1017/S1431927603022141
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Exciton self-trapped on Si-Si dimers on the surface of silicon nanocrystal: Experimental evidence.
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- Physica Status Solidi (B), 2016, v. 253, n. 11, p. 2150, doi. 10.1002/pssb.201600525
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