Works by Kozub, V. I.

Results: 23

Negative magnetoresistance in SiC heteropolytype junctions.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 793, doi. 10.1007/s10854-007-9417-z

By:

Lebedev, Alexander Alexandrovich;
Abramov, P. L.;
Agrinskaya, N. V.;
Kozub, V. I.;
Kuznetsov, A. N.;
Lebedev, S. P.;
Oganesyan, G. A.;
Sorokin, L. M.;
Chernyaev, A. V.;
Shamshur, D. V.

Publication type:

Article

Suppression of Negative Magnetoresistance in Coulomb Gap Regime: Quantum Interference and Spin Effects in CdTe.

Published in:

Physica Status Solidi (B), 1998, v. 205, n. 1, p. 11, doi. 10.1002/(SICI)1521-3951(199801)205:1<11::AID-PSSB11>3.0.CO;2-1

By:

Agrinskaya, N. V.;
Kozub, V. I.

Publication type:

Article

Electron-phonon interaction in non-polar quantum dots induced by the amorphous polar environment.

Published in:

JETP Letters, 2010, v. 90, n. 10, p. 683, doi. 10.1134/S002136400922010X

By:

Poddubny, A. N.;
Goupalov, S. V.;
Kozub, V. I.;
Yassievich, I. N.

Publication type:

Article

Superconductor-insulator transition in (PbzSn1− z )0.84In0.16Te.

Published in:

JETP Letters, 2006, v. 84, n. 1, p. 35, doi. 10.1134/S002136400613008X

By:

Kozub, V. I.;
Parfen'ev, R. V.;
Shamshur, D. V.;
Shakura, D. V.;
Chernyaev, A. V.;
Nemov, S. A.

Publication type:

Article

Nonmonotonic Temperature Dependence of the Hall Resistance of a 2D Electron System in Silicon.

Published in:

JETP Letters, 2005, v. 81, n. 8, p. 409, doi. 10.1134/1.1951019

By:

Kuntsevich, A. Yu.;
Knyazev, D. A.;
Kozub, V. I.;
Pudalov, V. M.;
Brunthaler, G.;
Bauer, G.

Publication type:

Article

Electron Transport in Monodisperse Metal Nanostructures.

Published in:

JETP Letters, 2005, v. 81, n. 5, p. 226, doi. 10.1134/1.1921321

By:

Kozub, V. I.;
Kozhevin, V. M.;
Yavsin, D. A.;
Gurevich, S. A.

Publication type:

Article

Transition from Strong to Weak Localization in the Split-Off Impurity Band in Two-Dimensional p-GaAs/AlGaAs Structures.

Published in:

JETP Letters, 2004, v. 80, n. 1, p. 30, doi. 10.1134/1.1800210

By:

Agrinskaya, N. V.;
Kozub, V. I.;
Poloskin, D. V.;
Chernyaev, A. V.;
Shamshur, D. V.

Publication type:

Article

Manifestation of Coulomb Gap in Two-Dimensional p-GaAs–AlGaAs Structures with Filled Upper Hubbard Band.

Published in:

JETP Letters, 2002, v. 76, n. 6, p. 360, doi. 10.1134/1.1525037

By:

Agrinskaya, N. V.;
Kozub, V. I.;
Ustinov, V. M.;
Chernyaev, A. V.;
Shamshur, D. V.

Publication type:

Article

Low-Temperature Hopping Conduction over the Upper Hubbard Band in p-GaAs/AlGaAs Multilayered Structures.

Published in:

Journal of Experimental & Theoretical Physics, 2001, v. 93, n. 2, p. 424, doi. 10.1134/1.1402743

By:

Agrinskaya, N. V.;
Kozub, V. I.;
Ivanov, Yu. L.;
Ustinov, V. M.;
Chernyaev, A. V.;
Shamshur, D. V.

Publication type:

Article

Universal description of crossover between the Mott regime and the Coloumb-gap regime in hopping conductivity: application to compensated CdTe.

Published in:

Journal of Experimental & Theoretical Physics, 1999, v. 89, n. 6, p. 1125, doi. 10.1134/1.559062

By:

Agrinskaya, N. V.;
Kozub, V. I.

Publication type:

Article

Orbital and spin effects in the low-temperature behavior of the magnetoresistance of doped CdTe crystals.

Published in:

Journal of Experimental & Theoretical Physics, 1997, v. 84, n. 4, p. 814, doi. 10.1134/1.558216

By:

Agrinskaya, N. V.;
Kozub, V. I.;
Rentzsch, R.;
Lea, M. J.;
Fozooni, P.

Publication type:

Article

Galvanomagnetic properties of 3C-SiC epilayers grown on hexagonal SiC substrates.

Published in:

Technical Physics Letters, 2007, v. 33, n. 12, p. 1035, doi. 10.1134/S1063785007120152

By:

Lebedev, A. A.;
Abramov, P. L.;
Agrinskaya, N. V.;
Kozub, V. I.;
Kuznetsov, A. N.;
Lebedev, S. P.;
Oganesyan, G. A.;
Sorokin, L. M.;
Chernyaev, A. V.;
Shamshur, D. V.

Publication type:

Article

Coulomb Drag in Mesoscopic Hopping Insulators.

Published in:

Journal of Low Temperature Physics, 2020, v. 198, n. 3/4, p. 209, doi. 10.1007/s10909-019-02292-6

By:

Kozub, V. I.;
Galperin, Y. M.

Publication type:

Article

Thermoelectric effects in superconducting nanostructures.

Published in:

European Physical Journal B: Condensed Matter, 2006, v. 51, n. 2, p. 285, doi. 10.1140/epjb/e2006-00218-6

By:

Gurevich, V. L.;
Kozub, V. I.;
Shelankov, A. L.

Publication type:

Article

Spin Glass Model for GaAs/AlGaAs Quantum Wells Doped by Nonmagnetic Impurities near the Metal-Insulator Transition.

Published in:

Journal of Experimental & Theoretical Physics, 2023, v. 137, n. 5, p. 688, doi. 10.1134/S1063776123110018

By:

Agrinskaya, N. V.;
Kozub, V. I.

Publication type:

Article

Spin Glass and Isotropic Negative Magnetoresistance in GaAs–AlGaAs Quantum Wells with a Virtual Anderson Transition.

Published in:

Journal of Experimental & Theoretical Physics, 2021, v. 132, n. 5, p. 810, doi. 10.1134/S1063776121050071

By:

Shumilin, A. V.;
Kozub, V. I.;
Agrinskaya, N. V.;
Mikhailin, N. Yu.;
Shamshur, D. V.

Publication type:

Article

Low-Temperature Magnetic Properties of Superconducting Indium Nanocomposites in Opal Matrix.

Published in:

Journal of Experimental & Theoretical Physics, 2019, v. 128, n. 5, p. 761, doi. 10.1134/S1063776119040034

By:

Mikhailin, N. Yu.;
Galperin, Y. M.;
Kozub, V. I.;
Kumzerov, Yu. A.;
Volkov, M. P.;
Romanov, S. G.;
Fokin, A. V.;
Shamshur, D. V.

Publication type:

Article

Exponential Increase in the Resistivity upon Cooling and Superconductivity in Indium-Doped Pb0.45Sn0.55Te.

Published in:

Journal of Experimental & Theoretical Physics, 2017, v. 125, n. 6, p. 1137, doi. 10.1134/S1063776117120123

By:

Andrianov, G. O.;
Galperin, Yu. M.;
Kozub, V. I.;
Mikhailin, N. Yu.;
Parfen’ev, R. V.;
Shamshur, D. V.;
Chernyaev, A. V.

Publication type:

Article

Dynamic Spin Phenomena in Complex Structures Based on Ferromagnetic Metals and Semiconductors (Scientific Summary).

Published in:

JETP Letters, 2019, v. 110, n. 7, p. 495, doi. 10.1134/S0021364019190044

By:

Agrinskaya, N. V.;
Kozub, V. I.;
Shumilin, A. V.

Publication type:

Article

Mixed conduction in doped semiconductor structures related to quasi-metallic conduction in the impurity band.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 472, doi. 10.1134/S1063782610040111

By:

Agrinskaya, N. V.;
Kozub, V. I.;
Poloskin, D. S.

Publication type:

Article

Metal-insulator transition in n-3 C-SiC epitaxial films.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 318, doi. 10.1134/S1063782609030117

By:

Lebedev, A. A.;
Abramov, P. L.;
Agrinskaya, N. V.;
Kozub, V. I.;
Kuznetsov, A. N.;
Lebedev, S. P.;
Oganesyan, G. A.;
Tregubova, A. S.;
Chernyaev, A. V.;
Shamshur, D. V.;
Skvortsova, M. O.

Publication type:

Article

Evidence for [variant_greek_epsilon][sub 2]-conductivity in the magnetoresistance of multivalley semiconductors.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 135, doi. 10.1134/1.1187659

By:

Agrinskaya, N. V.;
Kozub, V. I.;
Polyanskaya, T. A.;
Saidov, A. S.

Publication type:

Article

Experimental manifestations of correlated hopping in the temperature dependences of the conductivity of doped CdTe

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 631, doi. 10.1134/1.1187453

By:

Agrinskaya, N. V.;
Kozub, V. I.

Publication type:

Article

Works by Kozub, V. I.

Negative magnetoresistance in SiC heteropolytype junctions.

Suppression of Negative Magnetoresistance in Coulomb Gap Regime: Quantum Interference and Spin Effects in CdTe.

Electron-phonon interaction in non-polar quantum dots induced by the amorphous polar environment.

Superconductor-insulator transition in (Pb<sub>z</sub>Sn<sub>1− z </sub>)<sub>0.84</sub>In<sub>0.16</sub>Te.

Nonmonotonic Temperature Dependence of the Hall Resistance of a 2D Electron System in Silicon.

Electron Transport in Monodisperse Metal Nanostructures.

Transition from Strong to Weak Localization in the Split-Off Impurity Band in Two-Dimensional p-GaAs/AlGaAs Structures.

Manifestation of Coulomb Gap in Two-Dimensional p-GaAs–AlGaAs Structures with Filled Upper Hubbard Band.

Low-Temperature Hopping Conduction over the Upper Hubbard Band in p-GaAs/AlGaAs Multilayered Structures.

Universal description of crossover between the Mott regime and the Coloumb-gap regime in hopping conductivity: application to compensated CdTe.

Orbital and spin effects in the low-temperature behavior of the magnetoresistance of doped CdTe crystals.

Galvanomagnetic properties of 3C-SiC epilayers grown on hexagonal SiC substrates.

Coulomb Drag in Mesoscopic Hopping Insulators.

Thermoelectric effects in superconducting nanostructures.

Spin Glass Model for GaAs/AlGaAs Quantum Wells Doped by Nonmagnetic Impurities near the Metal-Insulator Transition.

Spin Glass and Isotropic Negative Magnetoresistance in GaAs–AlGaAs Quantum Wells with a Virtual Anderson Transition.

Low-Temperature Magnetic Properties of Superconducting Indium Nanocomposites in Opal Matrix.

Exponential Increase in the Resistivity upon Cooling and Superconductivity in Indium-Doped Pb<sub>0.45</sub>Sn<sub>0.55</sub>Te.

Dynamic Spin Phenomena in Complex Structures Based on Ferromagnetic Metals and Semiconductors (Scientific Summary).

Mixed conduction in doped semiconductor structures related to quasi-metallic conduction in the impurity band.

Metal-insulator transition in n-3 C-SiC epitaxial films.

Evidence for [variant_greek_epsilon][sub 2]-conductivity in the magnetoresistance of multivalley semiconductors.

Experimental manifestations of correlated hopping in the temperature dependences of the conductivity of doped CdTe