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Ultrafast creation and annihilation of space-charge domains in a semiconductor superlattice observed by use of Terahertz fields.
Published in:
European Physical Journal B: Condensed Matter, 2004, v. 39, n. 4, p. 483, doi. 10.1140/epjb/e2004-00221-y
By:
- Klappenberger, F.;
- Alekseev, K. N.;
- Renk, K. F.;
- Scheuerer, R.;
- Schomburg, E.;
- Allen, S. J.;
- Ramian, G. R.;
- Scott, J. S. S.;
- Kovsh, A.;
- Ustinov, V.;
- Zhukov, A.
Publication type:
Article
High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm.
Published in:
Technical Physics Letters, 2008, v. 34, n. 12, p. 1008, doi. 10.1134/S1063785008120055
By:
- Novikov, I. I.;
- Gordeev, N. Yu.;
- Maksimov, M. V.;
- Zhukov, A. E.;
- Shernyakov, Yu. M.;
- Ustinov, V. M.;
- Kryzhanovskaya, N. V.;
- Payusov, A. S.;
- Krestnikov, I. L.;
- Lifshits, D. A.;
- Mikhrin, S. S.;
- Kovsh, A. R.
Publication type:
Article
Polarization dependence of the stark shift in the absorption edge of InGaAs/GaAs quantum dot heterostructures.
Published in:
Technical Physics Letters, 2007, v. 33, n. 8, p. 686, doi. 10.1134/S1063785007080184
By:
- Portnoi, E. L.;
- Gadzhiev, I. M.;
- Gubenko, A. E.;
- Sobolev, M. M.;
- Kovsh, A. R.;
- Bakshaev, I. O.
Publication type:
Article
High-Power Single-Mode 1.3-μm Lasers Based on InAs/AlGaAs/GaAs Quantum Dot Heterostructures.
Published in:
Technical Physics Letters, 2004, v. 30, n. 1, p. 9, doi. 10.1134/1.1646701
By:
- Livshits, D.A.;
- Kovsh, A.R.;
- Zhukov, A.E.;
- Maleev, N.A.;
- Mikhrin, S.S.;
- Vasil'ev, A.P.;
- Nikitina, E.V.;
- Ustinov, V.M.;
- Ledentsov, N.N.;
- Lin, G.;
- Chi, J.
Publication type:
Article
Longwave Generation in Laser Structures Based on InGaAs(N) Quantum Wells on GaAs Substrates.
Published in:
Technical Physics Letters, 2003, v. 29, n. 5, p. 433, doi. 10.1134/1.1579817
By:
- Odnoblyudov, V. A.;
- Egorov, A. Yu.;
- Kovsh, A. R.;
- Mamutin, V. V.;
- Nikitina, E. V.;
- Shernyakov, Yu. M.;
- Maksimov, M. V.;
- Ustinov, V. M.
Publication type:
Article
Molecular Beam Epitaxy of (Al)GaAsN Using Ammonia as a Source of Nitrogen.
Published in:
Technical Physics Letters, 2002, v. 28, n. 6, p. 517, doi. 10.1134/1.1490977
By:
- Odnoblyudov, V. A.;
- Kovsh, A. R.;
- Zhukov, A. E.;
- Egorov, A. Yu.;
- Maleev, N. A.;
- Mikhrin, S. S.;
- Ustinov, V. M.
Publication type:
Article
Long-Wavelength Emission in InGaAsN/GaAs Heterostructures with Quantum Wells.
Published in:
Technical Physics Letters, 2000, v. 26, n. 5, p. 443, doi. 10.1134/1.1262873
By:
- Volovik, B. V.;
- Kovsh, A. R.;
- Passenberg, W.;
- Kuenzel, H.;
- Ledentsov, N. N.;
- Ustinov, V. M.
Publication type:
Article
Quantum-dot injection heterolaser with 3.3 W output power.
Published in:
Technical Physics Letters, 1999, v. 25, n. 6, p. 438, doi. 10.1134/1.1262530
By:
- Kovsh, A. R.;
- Livshits, D. A.;
- Zhukov, A. E.;
- Egorov, A. Yu.;
- Maksimov, M. V.;
- Ustinov, V. M.;
- Tarasov, I. S.;
- Ledentsov, N. N.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy.
Published in:
Technical Physics Letters, 1998, v. 24, n. 12, p. 942, doi. 10.1134/1.1262326
By:
- Egorov, A. Yu.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Mamutin, V. V.;
- Ivanov, S. V.;
- Zhmerik, V. N.;
- Tsatsul’nikov, A. F.;
- Bedarev, D. A.;
- Kop’ev, P. S.
Publication type:
Article
Spontaneous long-wavelength interlevel emission in quantum-dot laser structures.
Published in:
Technical Physics Letters, 1998, v. 24, n. 8, p. 590
By:
- Vorob’ev, L. E.;
- Firsov, D. A.;
- Shalygin, V. A.;
- Tulupenko, V. N.;
- Shernyakov, Yu. M.;
- Egorov, A. Yu.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Kop’ev, P. S.;
- Kochnev, I. V.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Ustinov, V. M.;
- Alferov, Zh. I.
Publication type:
Article
Lasing in submonolayer InAs/AlGaAs structures without external optical confinement.
Published in:
Technical Physics Letters, 1998, v. 24, n. 7, p. 567, doi. 10.1134/1.1262198
By:
- Volovik, B. V.;
- Tsatsul’nikov, A. F.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Sakharov, A. V.;
- Egorov, A. Yu.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Kozin, I. É.;
- Belousov, M. V.;
- Bimberg, D.
Publication type:
Article
Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region.
Published in:
Technical Physics Letters, 1998, v. 24, n. 5, p. 351, doi. 10.1134/1.1262118
By:
- Shernyakov, Yu. M.;
- Egorov, A. Yu.;
- Volovik, B. V.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Lunev, A. V.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Sakharov, A. V.;
- Ustinov, V. M.;
- Zhao, Zhen;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm.
Published in:
Technical Physics Letters, 1998, v. 24, n. 1, p. 22, doi. 10.1134/1.1261977
By:
- Ustinov, V. M.;
- Kovsh, A. R.;
- Zhukov, A. E.;
- Egorov, A. Yu.;
- Ledentsov, N. N.;
- Lunev, A. V.;
- Shernyakov, Yu. M.;
- Maksimov, M. V.;
- Tsatsul’nikov, A. F.;
- Volovik, B. V.;
- Kop’ev, P. S.;
- Alferov, Zh. I.
Publication type:
Article
Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W.
Published in:
Technical Physics Letters, 1997, v. 23, n. 2, p. 149, doi. 10.1134/1.1261567
By:
- Shernyakov, Yu. M.;
- Egorov, A. Yu.;
- Zhukov, A. E.;
- Zaıtsev, S. V.;
- Kovsh, A. R.;
- Krestnikov, I. L.;
- Lunev, A. V.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Sakharov, A. V.;
- Ustinov, V. M.;
- Chen, Chao;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Submonolayer Quantum Dots for High Speed Surface Emitting Lasers.
Published in:
Nanoscale Research Letters, 2007, v. 2, n. 9, p. 417, doi. 10.1007/s11671-007-9078-0
By:
- Ledentsov, N.;
- Bimberg, D.;
- Hopfer, F.;
- Mutig, A.;
- Shchukin, V.;
- Savel’ev, A.;
- Fiol, G.;
- Stock, E.;
- Eisele, H.;
- Dähne, M.;
- Gerthsen, D.;
- Fischer, U.;
- Litvinov, D.;
- Rosenauer, A.;
- Mikhrin, S.;
- Kovsh, A.;
- Zakharov, N.;
- Werner, P.
Publication type:
Article
Recognition of Facial Expressions Based on Information From the Areas of Highest Increase in Luminance Contrast.
Published in:
International Journal of Cognitive Research in Science, Engineering & Education (IJCRSEE), 2022, v. 10, n. 3, p. 37, doi. 10.23947/2334-8496-2022-10-3-37-51
By:
- Babenko, Vitali;
- Alekseeva, Daria;
- Yavna, Denis;
- Denisova, Ekaterina;
- Kovsh, Ekaterina;
- Ermakov, Pavel
Publication type:
Article
Relationship Between Facial Areas With the Greatest Increase in Non-local Contrast and Gaze Fixations in Recognizing Emotional Expressions.
Published in:
International Journal of Cognitive Research in Science, Engineering & Education (IJCRSEE), 2021, v. 9, n. 3, p. 359, doi. 10.23947/2334-8496-2021-9-3-359-368
By:
- Babenko, Vitali;
- Yavna, Denis;
- Vorobyeva, Elena;
- Denisova, Ekaterina;
- Ermakov, Pavel;
- Kovsh, Ekaterina
Publication type:
Article
A REVIEW OF NEUROPHYSIOLOGICAL AND GENETIC CORRELATES OF EMOTIONAL INTELLIGENCE.
Published in:
International Journal of Cognitive Research in Science, Engineering & Education (IJCRSEE), 2019, v. 7, n. 1, p. 137, doi. 10.5937/ijcrsee1901137K
By:
- Vladimir, Kosonogov;
- Elena, Vorobyeva;
- Ekaterina, Kovsh;
- Pavel, Ermakov
Publication type:
Article
Device characteristics of long-wavelength lasers based on self-organized quantum dots.
Published in:
Semiconductors, 2012, v. 46, n. 10, p. 1225, doi. 10.1134/S1063782612100223
By:
- Zhukov, A.;
- Maksimov, M.;
- Kovsh, A.
Publication type:
Article
Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1308, doi. 10.1134/S106378261010012X
By:
- Shatalina, E. S.;
- Blokhin, S. A.;
- Nadtochy, A. M.;
- Payusov, A. S.;
- Savelyev, A. V.;
- Maximov, M. V.;
- Zhukov, A. E.;
- Ledentsov, N. N.;
- Kovsh, A. R.;
- Mikhrin, S. S.;
- Ustinov, V. M.
Publication type:
Article
A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1357, doi. 10.1134/S1063782610100192
By:
- Gordeev, N. Yu.;
- Novikov, I. I.;
- Kuznetsov, A. M.;
- Shernyakov, Yu. M.;
- Maximov, M. V.;
- Zhukov, A. E.;
- Chunareva, A. V.;
- Payusov, A. S.;
- Livshits, D. A.;
- Kovsh, A. R.
Publication type:
Article
Event-Related Potentials during Verbal Recognition of Naturalistic Neutral-to-Emotional Dynamic Facial Expressions.
Published in:
Applied Sciences (2076-3417), 2022, v. 12, n. 15, p. 7782, doi. 10.3390/app12157782
By:
- Kosonogov, Vladimir;
- Kovsh, Ekaterina;
- Vorobyeva, Elena
Publication type:
Article
AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 514, doi. 10.1134/S1063782609040204
By:
- Blokhin, S. A.;
- Sakharov, A. V.;
- Nadtochy, A. M.;
- Pauysov, A. S.;
- Maximov, M. V.;
- Ledentsov, N. N.;
- Kovsh, A.R.;
- Mikhrin, S. S.;
- Lantratov, V. M.;
- Mintairov, S. A.;
- Kaluzhniy, N. A.;
- Shvarts, M. Z.
Publication type:
Article
The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots.
Published in:
Semiconductors, 2007, v. 41, n. 10, p. 1224, doi. 10.1134/S1063782607100181
By:
- Kuzmenkov, A. G.;
- Blokhin, S. A.;
- Maleev, N. A.;
- Sakharov, A. V.;
- Tikhomirov, V. G.;
- Maksimov, M. V.;
- Ustinov, V. M.;
- Kovsh, A. R.;
- Mikhrin, S. S.;
- Ledentsov, N. N.;
- Yang, H. P. D.;
- Lin, G.;
- Hsiao, R. S.;
- Chi, J. Y.
Publication type:
Article
Injection lasers with a broad emission spectrum on the basis of self-assembled quantum dots.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 606, doi. 10.1134/S1063782607050223
By:
- Zhukov, A. E.;
- Kovsh, A. R.;
- Nikitina, E. V.;
- Ustinov, V. M.;
- Alferov, Zh. I.
Publication type:
Article
Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs.
Published in:
Semiconductors, 2006, v. 40, n. 10, p. 1232, doi. 10.1134/S1063782606100198
By:
- Blokhin, S.;
- Sakharov, A.;
- Maleev, N.;
- Kuz'menkov, A.;
- Novikov, I.;
- Gordeev, N.;
- Shernyakov, Yu.;
- Maximov, M.;
- Ustinov, V.;
- Kovsh, A.;
- Mikhrin, S.;
- Ledentsov, N.;
- Lee, G.;
- Chi, J.
Publication type:
Article
VCSELs based on arrays of sub-monolayer InGaAs quantum dots.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 615, doi. 10.1134/S1063782606050186
By:
- Blokhin, S. A.;
- Maleev, N. A.;
- Kuz'menkov, A. G.;
- Shernyakov, Yu. M.;
- Novikov, I. I.;
- Gordeev, N. Yu.;
- Dyudelev, V. V.;
- Sokolovskiĭ, G. S.;
- Kuchinskiĭ, V. I.;
- Kulagina, M. M.;
- Maximov, M. V.;
- Ustinov, V. M.;
- Kovsh, A. R.;
- Mikhrin, S. S.;
- Ledentsov, N. N.
Publication type:
Article
Continuous-wave Lasing of Single-Mode Metamorphic Quantum Dot Lasers for the 1.5-μm Spectral Region.
Published in:
Semiconductors, 2005, v. 39, n. 12, p. 1415, doi. 10.1134/1.2140316
By:
- Karachinsky, L. Ya.;
- Kettler, T.;
- Gordeev, N. Yu.;
- Novikov, I. I.;
- Maximov, M. V.;
- Shernyakov, Yu. M.;
- Kryzhanovskaya, N. V.;
- Zhukov, A. E.;
- Semenova, E. S.;
- Vasil'ev, A. P.;
- Ustinov, V. M.;
- Ledentsov, N. N.;
- Kovsh, A. R.;
- Shchukin, V. A.;
- Mikhrin, S. S.;
- Lochmann, A.;
- Schulz, O.;
- Reissmann, L.;
- Bimberg, D.
Publication type:
Article
The Optical Properties of Heterostructures with Quantum-Confined InGaAsN Layers on a GaAs Substrate and Emitting at 1.3–1.55μm.
Published in:
Semiconductors, 2005, v. 39, n. 6, p. 703, doi. 10.1134/1.1944862
By:
- Kryzhanovskaya, N. V.;
- Egorov, A. Yu.;
- Mamutin, V. V.;
- Polyakov, N. K.;
- Tsatsul’nikov, A. F.;
- Kovsh, A. R.;
- Ledentsov, N. N.;
- Ustinov, V. M.;
- Bimberg, D.
Publication type:
Article
Effect of p-Doping of the Active Region on the Temperature Stability of InAs/GaAs QD Lasers.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 477, doi. 10.1134/1.1900266
By:
- Novikov, I. I.;
- Gordeev, N. Yu.;
- Karachinski&icaron;, L. Ya.;
- Maksimov, M. V.;
- Shernyakov, Yu. M.;
- Kovsh, A. R.;
- Krestnikov, I. L.;
- Kozhukhov, A. V.;
- Mikhrin, S. S.;
- Ledentsov, N. N.
Publication type:
Article
Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 727, doi. 10.1134/1.1766380
By:
- Karachinsky, L.Ya.;
- Gordeev, N.Yu.;
- Novikov, I.I.;
- Maximov, M.V.;
- Kovsh, A.R.;
- Wang, J.S.;
- Hsiao, R.S.;
- Chi, J.Y.;
- Ustinov, V.M.;
- Ledentsov, N.N.
Publication type:
Article
High-Power 1.5 μm InAs–InGaAs Quantum Dot Lasers on GaAs Substrates.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 732, doi. 10.1134/1.1766381
By:
- Maksimov, M.V.;
- Shernyakov, Yu.M.;
- Kryzhanovskaya, N.V.;
- Gladyshev, A.G.;
- Musikhin, Yu.G.;
- Ledentsov, N.N.;
- Zhukov, A.E.;
- Vasil'ev, A.P.;
- Kovsh, A.R.;
- Mikhrin, S.S.;
- Semenova, E.S.;
- Maleev, N.A.;
- Nikitina, E.V.;
- Ustinov, V.M.;
- Alferov, Zh.I.
Publication type:
Article
Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates.
Published in:
Semiconductors, 2003, v. 37, n. 12, p. 1411, doi. 10.1134/1.1634663
By:
- Zhukov, A. E.;
- Vasil'yev, A. P.;
- Kovsh, A. R.;
- Mikhrin, S. S.;
- Semenova, E. S.;
- Egorov, A. Yu.;
- Odnoblyudov, V. A.;
- Maleev, N. A.;
- Nikitina, E. V.;
- Kryjanovskaya, N. V.;
- Gladyshev, A. G.;
- Shernyakov, Yu. M.;
- Maximov, M. V.;
- Ledentsov, N. N.;
- Ustinov, V. M.;
- Alferov, Zh. I.
Publication type:
Article
Optical Properties of MBE-Grown Ultrathin GaAsN Insertions in GaAs Matrix.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1326, doi. 10.1134/1.1626218
By:
- Kryzhanovskayal, N. V.;
- Gladyshev, A. G.;
- Kovsh, A. R.;
- Soshnikov, I. P.;
- Tsatsul'nikov, A. F.;
- Kirmse, H.;
- Neumann, W.;
- Chi, J. Y.;
- Wang, J. S.;
- Wei, L.;
- Ledentsov, N. N.;
- Ustinov, V. M.
Publication type:
Article
Design and Technology of Vertical-Cavity Surface-Emitting Lasers with Nonconducting Epitaxial Mirrors.
Published in:
Semiconductors, 2003, v. 37, n. 10, p. 1234, doi. 10.1134/1.1619524
By:
- Maleev, N.A.;
- Kovsh, A.P.;
- Zhukov, A.E.;
- Vasil'ev, A.P.;
- Mikhrin, S.S.;
- Kuz'menkov, A.G.;
- Bedarev, D.A.;
- Zadiranov, Yu. M.;
- Kulagina, M.M.;
- Shernyakov, Yu. M.;
- Shulenkov, A.S.;
- Bykovskii, V.A.;
- Solov'ev, Yu. M.;
- Moller, C.;
- Ledentsov, N.N.;
- Ustinov, V.M.
Publication type:
Article
Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29μm.
Published in:
Semiconductors, 2003, v. 37, n. 10, p. 1239, doi. 10.1134/1.1619525
By:
- Novikov, I.I.;
- Maksimov, M.V.;
- Shernyakov, Yu. M.;
- Gordeev, N. Yu.;
- Kovsh, A.R.;
- Zhukov, A.E.;
- Mikhrin, S.S.;
- Maleev, N.A.;
- Vasil'ev, A.P.;
- Ustinov, V.M.;
- Alferov, Zh. I.;
- Ledentsov, N.N.;
- Bimberg, D.
Publication type:
Article
Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates.
Published in:
Semiconductors, 2003, v. 37, n. 9, p. 1104, doi. 10.1134/1.1610128
By:
- Semenova, E.S.;
- Zhukov, A.E.;
- Vasil'ev, A.P.;
- Mikhrin, S.S.;
- Kovsh, A.R.;
- Ustinov, V.M.;
- Musikhin, Yu.G.;
- Blokhin, S.A.;
- Gladyshev, A.G.;
- Ledentsov, N.N.
Publication type:
Article
Metamorphic Lasers for 1.3-μm Spectral Range Grown on GaAs Substrates by MBE.
Published in:
Semiconductors, 2003, v. 37, n. 9, p. 1119, doi. 10.1134/1.1610131
By:
- Zhukov, A.E.;
- Kovsh, A.R.;
- Mikhrin, S.S.;
- Semenova, E.S.;
- Maleev, N.A.;
- Vasil'ev, A.P.;
- Nikitina, E.V.;
- Kryzhanovskaya, N.V.;
- Gladyshev, A.G.;
- Shernyakov, Yu.M.;
- Musikhin, Yu.G.;
- Maksimov, M.V.;
- Ledentsov, N.N.;
- Ustinov, V.M.;
- Alferov, Zh.I.
Publication type:
Article
High Efficiency (η[sub D] > 80%) Long Wavelength (λ > 1.25 μm) Quantum Dot Diode Lasers on GaAs Substrates.
Published in:
Semiconductors, 2002, v. 36, n. 11, p. 1315, doi. 10.1134/1.1521237
By:
- Mikhrin, S. S.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Maleev, N. A.;
- Vasil’ev, A. P.;
- Semenova, E. S.;
- Ustinov, V. M.;
- Kulagina, M. M.;
- Nikitina, E. V.;
- Soshnikov, I. P.;
- Shernyakov, Yu. M.;
- Livshits, D. A.;
- Kryjanovskaya, N. V.;
- Sizov, D. S.;
- Maksimov, M. V.;
- Tsatsul’nikov, A. F.;
- Ledentsov, N. N.;
- Bimberg, D.;
- Alferov, Zh. I.
Publication type:
Article
Effect of Carrier Localization on the Optical Properties of MBE-Grown GaAsN/GaAs Heterostructures.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 997, doi. 10.1134/1.1507281
By:
- Volovik, B. V.;
- Kryzhanovskaya, N. V.;
- Sizov, D. S.;
- Kovsh, A. R.;
- Tsatsul’nikov, A. F.;
- Chi, J. Y.;
- Wang, J. S.;
- Wei, L.;
- Ustinov, V. M.
Publication type:
Article
Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound.
Published in:
Semiconductors, 2002, v. 36, n. 8, p. 899, doi. 10.1134/1.1500468
By:
- Zhukov, A.E.;
- Kovsh, A.R.;
- Semenova, E.S.;
- Ustinov, V.M.;
- Wei, L.;
- Wang, J.-S.;
- Chi, J.Y.
Publication type:
Article
Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As–GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy.
Published in:
Semiconductors, 2001, v. 35, n. 8, p. 932, doi. 10.1134/1.1393030
By:
- Faleev, N. N.;
- Musikhin, Yu. G.;
- Suvorova, A. A.;
- Egorov, A. Yu.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Tabuchi, M.;
- Takeda, Y.
Publication type:
Article
Comparative Analysis of Long-Wavelength (1.3μm) VCSELs on GaAs Substrates.
Published in:
Semiconductors, 2001, v. 35, n. 7, p. 847, doi. 10.1134/1.1385723
By:
- Maleev, N. A.;
- Egorov, A. Yu.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Vasil’ev, A. P.;
- Ustinov, V. M.;
- Ledentsov, N. N.;
- Alferov, Zh. I.
Publication type:
Article
1.3μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them.
Published in:
Semiconductors, 2001, v. 35, n. 7, p. 854, doi. 10.1134/1.1385724
By:
- Sakharov, A. V.;
- Krestnikov, I. L.;
- Maleev, N. A.;
- Kovsh, A. R.;
- Zhukov, A. E.;
- Tsatsul’nikov, A. F.;
- Ustinov, V. M.;
- Ledentsov, N. N.;
- Bimberg, D.;
- Lott, J. A.;
- Alferov, Zh. I.
Publication type:
Article
Thermodynamic Analysis of the Growth of GaAsN Ternary Compounds by Molecular Beam Epitaxy.
Published in:
Semiconductors, 2001, v. 35, n. 5, p. 533, doi. 10.1134/1.1371617
By:
- Odnoblyudov, V. A.;
- Kovsh, A. R.;
- Zhukov, A. E.;
- Maleev, N. A.;
- Semenova, E. S.;
- Ustinov, V. M.
Publication type:
Article
Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3μm Wavelength Range.
Published in:
Semiconductors, 2000, v. 34, n. 5, p. 594, doi. 10.1134/1.1188034
By:
- Maleev, N. A.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Mikhrin, S. S.;
- Ustinov, V. M.;
- Bedarev, D. A.;
- Volovik, B. V.;
- Krestnikov, I. L.;
- Kayander, I. N.;
- Odnoblyudov, V. A.;
- Suvorova, A. A.;
- Tsatsul’nikov, A. F.;
- Shernyakov, Yu. M.;
- Ledentsov, N. N.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Power Conversion Efficiency of Quantum Dot Laser Diodes.
Published in:
Semiconductors, 2000, v. 34, n. 5, p. 609, doi. 10.1134/1.1188038
By:
- Zhukov, A. E.;
- Kovsh, A. R.;
- Mikhrin, S. S.;
- Maleev, N. A.;
- Odnoblyudov, V. A.;
- Ustinov, V. M.;
- Shernyakov, Yu. M.;
- Kondrat’eva, E. Yu.;
- Livshits, D. A.;
- Tarasov, I. S.;
- Ledentsov, N. N.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots.
Published in:
Semiconductors, 2000, v. 34, n. 3, p. 323, doi. 10.1134/1.1187980
By:
- Tsatsul’nikov, A. F.;
- Volovik, B. V.;
- Bedarev, D. A.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Maleev, N. A.;
- Musikhin, Yu. G.;
- Ustinov, V. M.;
- Bert, N. A.;
- Kop’ev, P. S.;
- Bimberg, D.;
- Alferov, Zh. I.
Publication type:
Article
A Spatially Single-Mode Laser for a Range of 1.25–1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 119, doi. 10.1134/1.1187954
By:
- Mikhrin, S. S.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Maleev, N. A.;
- Ustinov, V. M.;
- Shernyakov, Yu. M.;
- Kayander, I. N.;
- Kondrat’eva, E. Yu.;
- Livshits, D. A.;
- Tarasov, I. S.;
- Maksimov, M. V.;
- Tsatsul’nikov, A. F.;
- Ledentsov, N. N.;
- Kop’ev, P. S.;
- Bimberg, D.;
- Alferov, Zh. I.
Publication type:
Article
X-Ray diffraction analysis of multilayer InAs–GaAs heterostructures with InAs quantum dots.
Published in:
Semiconductors, 1999, v. 33, n. 11, p. 1229, doi. 10.1134/1.1187855
By:
- Faleev, N. N.;
- Egorov, A. Yu.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Mikhrin, S. S.;
- Ustinov, V. M.;
- Pavlov, K. M.;
- Punegov, V. I.;
- Tabuchi, M.;
- Takeda, Y.
Publication type:
Article

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