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Detection of Ramsey Oscillations in Germanium Doped with Shallow Donors upon the Excitation of the 1s → 2p<sub>0</sub> Transition.
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- JETP Letters, 2022, v. 116, n. 3, p. 137, doi. 10.1134/S0021364022601191
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- Article
Double Magnesium Donors as a Potential Active Medium in the Terahertz Range.
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- Semiconductors, 2024, v. 58, n. 1, p. 86, doi. 10.1134/S1063782624010172
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- Article
Relaxation of the Excited States of Arsenic in Strained Germanium.
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- Semiconductors, 2020, v. 54, n. 10, p. 1347, doi. 10.1134/S1063782620100188
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- Article
Frequency Tuning of Terahertz Stimulated Emission under the Intracenter Optical Excitation of Uniaxially Stressed Si:Bi.
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- Semiconductors, 2020, v. 54, n. 8, p. 969, doi. 10.1134/S1063782620080278
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- Article
Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission.
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- Semiconductors, 2019, v. 53, n. 9, p. 1234, doi. 10.1134/S1063782619090197
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- Article
Polarization of the induced THz emission of donors in silicon.
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- Semiconductors, 2016, v. 50, n. 12, p. 1673, doi. 10.1134/S1063782616120101
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- Article
Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon.
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- Semiconductors, 2016, v. 50, n. 11, p. 1458, doi. 10.1134/S1063782616110270
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- Article
Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures.
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- Semiconductors, 2015, v. 49, n. 1, p. 13, doi. 10.1134/S1063782615010273
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- Article
Shallow-donor lasers in uniaxially stressed silicon.
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- Semiconductors, 2013, v. 47, n. 2, p. 235, doi. 10.1134/S1063782613020152
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- Article
Effect of uniaxial stress on intervalley phonon-assisted relaxation of excited shallow-donor states in silicon.
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- Semiconductors, 2009, v. 43, n. 11, p. 1410, doi. 10.1134/S1063782609110037
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- Article
Relaxation of excited donor states in silicon with emission of intervalley phonons.
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- Semiconductors, 2008, v. 42, n. 9, p. 1016, doi. 10.1134/S1063782608090030
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- Article