Found: 41
Select item for more details and to access through your institution.
ANALYSIS OF MEDICINAL PROVISION OF PATIENTS WITH ARTERIAL HYPERTENSION IN HOSPITAL CONDITIONS.
- Published in:
- Wiadomości Lekarskie, 2021, v. 74, n. 3, Part 2, p. 718, doi. 10.36740/WLek202103228
- By:
- Publication type:
- Article
THE METHOD OF FORECASTING AS AN IMPORTANT STAGE IN SOLVING THE PROBLEMS FACING HEALTH IN THE FIELD OF MEDICAL CARE OF THE POPULATION.
- Published in:
- Wiadomości Lekarskie, 2020, v. 73, n. 11, p. 2507, doi. 10.36740/WLek202011131
- By:
- Publication type:
- Article
COMPARATIVE PHARMACOECONOMIC RESEARCH AND EVALUATION OF ENALAPRIL GENERICS IN TREATMENT OF PATIENTS WITH ARTERIAL HYPERTENSION.
- Published in:
- Likarska Sprava, 2019, n. 4, p. 55, doi. 10.31640/JVD.4.2019(9)
- By:
- Publication type:
- Article
THE MAIN METHODS OF TREATMENT OF CARDIOVASCULAR DISEASES BY MEDICINAL PLANTS.
- Published in:
- Wiadomości Lekarskie, 2018, v. 71, n. 6, p. 1279
- By:
- Publication type:
- Article
ASSORTMENT OF HERBAL MEDICINES OF THE TREATMENT OF CARDIOVASCULAR DISEASES.
- Published in:
- Wiadomości Lekarskie, 2018, v. 71, n. 5, p. 1104
- By:
- Publication type:
- Article
Quantitative analysis of optical and recombination losses in Cu(In,Ga)Se thin-film solar cells.
- Published in:
- Semiconductors, 2016, v. 50, n. 4, p. 508, doi. 10.1134/S1063782616040138
- By:
- Publication type:
- Article
Graphite/CdMnTe Schottky diodes and their electrical characteristics.
- Published in:
- Europhysics News, 2014, v. 45, n. 2, p. 9
- By:
- Publication type:
- Article
Possibilities to decrease the absorber thickness reducing optical and recombination losses in CdS/CdTe solar cells.
- Published in:
- Materials for Renewable & Sustainable Energy, 2013, v. 2, n. 3/4, p. 1, doi. 10.1007/s40243-013-0014-1
- By:
- Publication type:
- Article
Charge transport mechanisms in Schottky diodes based on low-resistance CdTe:Mn.
- Published in:
- Semiconductors, 2013, v. 47, n. 7, p. 916, doi. 10.1134/S1063782613070129
- By:
- Publication type:
- Article
Limitations on Thickness of Absorber Layer in CdS/CdTe Solar Cells.
- Published in:
- Acta Physica Polonica: A, 2012, v. 122, n. 6, p. 1073, doi. 10.12693/APhysPolA.122.1073
- By:
- Publication type:
- Article
Absorptivity of semiconductors used in the production of solar cell panels.
- Published in:
- Semiconductors, 2012, v. 46, n. 4, p. 466, doi. 10.1134/S1063782612040124
- By:
- Publication type:
- Article
Effect of the concentration of uncompensated impurities on the properties of CdTe-based X- and γ-ray detectors.
- Published in:
- Semiconductors, 2012, v. 46, n. 3, p. 374, doi. 10.1134/S1063782612030153
- By:
- Publication type:
- Article
Energy band gap and electrical conductivity of Cd<sub>1-x</sub>Mn<sub>x</sub>Te alloys with different manganese content.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 4, p. 421
- By:
- Publication type:
- Article
Band gap of CdTe and CdZnTe crystals.
- Published in:
- Semiconductors, 2011, v. 45, n. 10, p. 1273, doi. 10.1134/S1063782611100137
- By:
- Publication type:
- Article
Detector with High Internal Photocurrent Gain Based on ZnO:N.
- Published in:
- Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 681, doi. 10.12693/APhysPolA.119.681
- By:
- Publication type:
- Article
Open-circuit voltage, fill factor, and efficiency of a CdS/CdTe solar cell.
- Published in:
- Semiconductors, 2010, v. 44, n. 10, p. 1375, doi. 10.1134/S1063782610100234
- By:
- Publication type:
- Article
Features of the mechanism of electrical conductivity of semiinsulating CdTe crystals.
- Published in:
- Semiconductors, 2010, v. 44, n. 6, p. 699, doi. 10.1134/S1063782610060023
- By:
- Publication type:
- Article
Spectral Distribution of Photoelectric Efficiency of Thin-Film CdS/CdTe Heterostructure.
- Published in:
- Acta Physica Polonica: A, 2009, v. 116, n. 5, p. 862, doi. 10.12693/APhysPolA.116.862
- By:
- Publication type:
- Article
Dependence of the efficiency of a CdS/CdTe solar cell on the absorbing layer’s thickness.
- Published in:
- Semiconductors, 2009, v. 43, n. 8, p. 1023, doi. 10.1134/S1063782609080119
- By:
- Publication type:
- Article
Extrinsic conductivity of Hg<sub>3</sub>In<sub>2</sub>Te<sub>6</sub> single crystals.
- Published in:
- Semiconductors, 2008, v. 42, n. 5, p. 514, doi. 10.1134/S1063782608050047
- By:
- Publication type:
- Article
Requirements imposed on the electrical properties of the absorber layer in CdTe-based solar cells.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 11, p. 1099, doi. 10.1007/s10854-007-9317-2
- By:
- Publication type:
- Article
Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 4, p. 15
- By:
- Publication type:
- Article
Potential of using the Cd<sub>0.8</sub>Hg<sub>0.2</sub>Te alloy in solar cells.
- Published in:
- Semiconductors, 2007, v. 41, n. 1, p. 94, doi. 10.1134/S1063782607010186
- By:
- Publication type:
- Article
Special features of the electrical characteristics of CdTe-based Schottky diodes with almost intrinsic conduction.
- Published in:
- Technical Physics Letters, 2006, v. 32, n. 12, p. 1056, doi. 10.1134/S1063785006120182
- By:
- Publication type:
- Article
Electrical performance of CdHgTe photodiodes for 1.30 and 1.55 μm.
- Published in:
- Technical Physics, 2006, v. 51, n. 9, p. 1197, doi. 10.1134/S1063784206090143
- By:
- Publication type:
- Article
Problems of efficiency of photoelectric conversion in thin-film CdS/CdTe solar cells.
- Published in:
- Semiconductors, 2006, v. 40, n. 6, p. 710, doi. 10.1134/S1063782606060182
- By:
- Publication type:
- Article
Electrical characteristics of the ITO/HgInTe photodiodes.
- Published in:
- Semiconductors, 2006, v. 40, n. 5, p. 554, doi. 10.1134/S1063782606050083
- By:
- Publication type:
- Article
Special Features of Charge Transport in Schottky Diodes Based on Semi-insulating CdTe.
- Published in:
- Semiconductors, 2005, v. 39, n. 6, p. 722, doi. 10.1134/1.1944866
- By:
- Publication type:
- Article
The Generation–Recombination Mechanism of Charge Transport in a Thin-Film CdS/CdTe Heterojunction.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 539, doi. 10.1134/1.1923561
- By:
- Publication type:
- Article
Active region of CdTe X-/γ-ray detector with Schottky diode.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 2, p. 45
- By:
- Publication type:
- Article
Specific Features of Conductivity of Cd[sub 1 – x]Zn[sub x]Te and Cd[sub 1 – x]Mn[sub x]Te Single Crystals.
- Published in:
- Semiconductors, 2003, v. 37, n. 12, p. 1373, doi. 10.1134/1.1634656
- By:
- Publication type:
- Article
Electrical Performance of HgInTe Surface-Barrier Photodiodes.
- Published in:
- Technical Physics, 2003, v. 48, n. 5, p. 647, doi. 10.1134/1.1576485
- By:
- Publication type:
- Article
Generation–Recombination Centers in CdTe:V.
- Published in:
- Semiconductors, 2003, v. 37, n. 4, p. 452, doi. 10.1134/1.1568467
- By:
- Publication type:
- Article
Electrical Properties of Surface-Barrier Diodes Based on CdZnTe.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 227, doi. 10.1134/1.1548671
- By:
- Publication type:
- Article
Electrical Properties of Narrow-Gap HgMnTe Schottky Diodes.
- Published in:
- Semiconductors, 2002, v. 36, n. 10, p. 1138, doi. 10.1134/1.1513859
- By:
- Publication type:
- Article
Generation–Recombination and Diffusion Currents in HgMnTe n[sup +]–p Junctions.
- Published in:
- Semiconductors, 2001, v. 35, n. 11, p. 1270, doi. 10.1134/1.1418070
- By:
- Publication type:
- Article
Special Features of Generation–Recombination Processes in the p–n Junctions Based on HgMnTe.
- Published in:
- Semiconductors, 2000, v. 34, n. 6, p. 668, doi. 10.1134/1.1188052
- By:
- Publication type:
- Article
Electrical properties of Hg[sub 1-x]Mn[sub x]Te-based photodiodes.
- Published in:
- Semiconductors, 1999, v. 33, n. 12, p. 1293, doi. 10.1134/1.1187910
- By:
- Publication type:
- Article
Hot-carrier far infrared emission in silicon.
- Published in:
- Semiconductors, 1999, v. 33, n. 2, p. 143, doi. 10.1134/1.1187660
- By:
- Publication type:
- Article
Characteristic features of electron photoemission from the metal in SiC-based Schottky diodes.
- Published in:
- Semiconductors, 1997, v. 31, n. 2, p. 164, doi. 10.1134/1.1187100
- By:
- Publication type:
- Article
On Tunnelling and Avalanche Processes at Electroluminescence of SiC p-n Junctions.
- Published in:
- Physica Status Solidi (B), 1969, v. 34, n. 1, p. 151, doi. 10.1002/pssb.19690340114
- By:
- Publication type:
- Article