Works by Kostylyov, V. P.

Results: 31

Space charge region recombination in highly efficient silicon solar cells.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2024, v. 27, n. 1, p. 10, doi. 10.15407/spqeo27.01.010
By:
- Sachenko, A. V.;
- Kostylyov, V. P.;
- Evstigneev, M.
Publication type:
Article
Space charge region recombination, non-radiative exciton recombination and the band-narrowing effect in high-efficiency silicon solar cells.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 2, p. 127, doi. 10.15407/spqeo26.02.127
By:
- Sachenko, A. V.;
- Kostylyov, V. P.;
- Vlasiuk, V. M.;
- Sokolovskyi, I. O.;
- Evstigneev, M.;
- Dvernikov, D. F.;
- Korkishko, R. M.;
- Chernenko, V. V.
Publication type:
Article
Modeling of characteristics of highly efficient textured solar cells based on c-silicon. The influence of recombination in the space charge region.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 1, p. 5, doi. 10.15407/spqeo26.01.005
By:
- Sachenko, A. V.;
- Kostylyov, V. P.;
- Vlasiuk, V. M.;
- Sokolovskyi, I. O.;
- Evstigneev, M. A.;
- Slusar, T. V.;
- Chernenko, V. V.
Publication type:
Article
Experimental investigation and theoretical modeling of textured silicon solar cells with rear metallization.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 3, p. 331, doi. 10.15407/spqeo25.03.331
By:
- Sachenko, A. V.;
- Kostylyov, V. P.;
- Korkishko, R. M.;
- Vlasiuk, V. M.;
- Sokolovskyi, I. O.;
- Evstigneev, M.;
- Olikh, O. Ya.;
- Shkrebtii, A. I.;
- Dvernikov, B. F.;
- Chernenko, V. V.
Publication type:
Article
Influence of the reagents' ratio on photoelectric and optical properties of perovskite films for photovoltaics.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 295, doi. 10.15407/spqeo24.03.295
By:
- Kostylyov, V. P.;
- Sachenko, A. V.;
- Sokolovskyi, I. O.;
- Vlasiuk, V. M.;
- Torchyniuk, P. V.;
- V'yunov, O. I.;
- Belous, A. G.;
- Shkrebtii, A. I.
Publication type:
Article
Simulation and characterization of planar high-efficiency back contact silicon solar cells.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 319, doi. 10.15407/spqeo24.03.319
By:
- Sachenko, A. V.;
- Kostylyov, V. P.;
- Korkishko, R. M.;
- Vlasiuk, V. M.;
- Sokolovskyi, I. O.;
- Dvernikov, B. F.;
- Chernenko, V. V.;
- Evstigneev, M. A.
Publication type:
Article
Intelligence system for monitoring and governing the energy efficiency of solar panels to power LED luminaires.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 2, p. 200, doi. 10.15407/spqeo24.02.200
By:
- Kornaga, V. I.;
- Pekur, D. V.;
- Kolomzarov, Yu. V.;
- Kostylyov, V. P.;
- Sorokin, V. M.;
- Korkishko, R. M.;
- Nikolaenko, Yu. E.
Publication type:
Article
Key parameters of textured silicon solar cells of 26.6% photoconversion efficiency.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 2, p. 175, doi. 10.15407/spqeo24.02.175
By:
- Sachenko, A. V.;
- Kostylyov, V. P.;
- Korkishko, R. M.;
- Vlasyuk, V. M.;
- Sokolovskyi, I. O.;
- Dvernikov, B. F.;
- Chernenko, V. V.;
- Evstigneev, M.
Publication type:
Article
Electro-optical characteristics of an innovative LED luminaire with an LED matrix cooling system based on heat pipes.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 4, p. 415, doi. 10.15407/spqeo23.04.415
By:
- Pekur, D. V.;
- Sorokin, V. M.;
- Nikolaenko, Yu. E.;
- Kostylyov, V. P.;
- Solntsev, V. S.;
- Ponomarenko, V. V.
Publication type:
Article
Influence of the quantum dots bandgap and their dispersion on the loss of luminescent quanta.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 2, p. 155, doi. 10.15407/spqeo23.02.155
By:
- Kulish, M. R.;
- Kostylyov, V. P.;
- Sachenko, A. V.;
- Sokolovskyi, I. O.;
- Shkrebtii, A. I.
Publication type:
Article
Key parameters of commercial silicon solar cells with rear metallization.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 3, p. 277, doi. 10.15407/spqeo22.03.277
By:
- Sachenko, A. V.;
- Kostylyov, V. P.;
- Vlasyuk, V. M.;
- Korkishko, R. M.;
- Sokolovskyi, I. O.;
- Chernenko, V. V.;
- Dvernikov, B. F.;
- Serba, O. A.;
- Evstigneev, M. A.
Publication type:
Article
Photoconverter with luminescent concentrator. Matrix material.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 1, p. 80, doi. 10.15407/spqeo22.01.80
By:
- Kulish, M. R.;
- Kostylyov, V. P.;
- Sachenko, A. V.;
- Sokolovskyi, I. O.;
- Shkrebtii, A. I.
Publication type:
Article
Impact of semiconductor quantum dots bandgap on reabsorption in luminescent concentrator.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 1, p. 58, doi. 10.15407/spqeo21.01.058
By:
- Shkrebtii, A. I.;
- Sachenko, A. V.;
- Sokolovskyi, I. O.;
- Kostylyov, V. P.;
- Kulish, M. R.
Publication type:
Article
Influence of non-radiative exciton recombination in silicon on photoconversion efficiency. 2. Short Shockley-Read-Hall lifetimes.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 1, p. 34, doi. 10.15407/spqeo20.01.034
By:
- Sachenko, A. V.;
- Kostylyov, V. P.;
- Vlasiuk, V. M.;
- Korkishko, R. M.;
- Sokolovskyi, I. O.;
- Chernenko, V. V.;
- Evstigneev, M. A.
Publication type:
Article
The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley-Read-Hall lifetimes.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 334, doi. 10.15407/spqeo19.04.334
By:
- Sachenko, A. V.;
- Kostylyov, V. P.;
- Vlasiuk, V. M.;
- Sokolovskyi, I. O.;
- Evstigneev, M. A.
Publication type:
Article
Luminescent converter of solar light into electrical energy. Review.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 3, p. 229, doi. 10.15407/spqeo19.03.229
By:
- Kulish, M. R.;
- Kostylyov, V. P.;
- Sachenko, A. V.;
- Sokolovskyi, I. O.;
- Khomenko, D. V.;
- Shkrebtii, A. I.
Publication type:
Article
Analysis of the silicon solar cells efficiency. Type of doping and level optimization.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 67, doi. 10.15407/spqeo19.01.067
By:
- Sachenko, A. V.;
- Kostylyov, V. P.;
- Gerasymenko, M. V.;
- Korkishko, R. M.;
- Kulish, M. R.;
- Slipchenko, M. I.;
- Sokolovskyi, I. O.;
- Chernenko, V. V.
Publication type:
Article
Influence of nanostructured ITO films on surface recombination processes in silicon solar cells.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 464, doi. 10.15407/spqeo18.04.464
By:
- Kostylyov, V. P.;
- Sachenko, A. V.;
- Serba, O. A.;
- Slusar, T. V.;
- Vlasyuk, V. M.;
- Tytarenko, P. O.;
- Chernenko, V. V.
Publication type:
Article
Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 259, doi. 10.15407/spqeo18.03.259
By:
- Sachenko, A. V.;
- Kostylyov, V. P.;
- Korkishko, R. M.;
- Kulish, M. R.;
- Sokolovskyi, I. O.;
- Vlasiuk, V. M.;
- Khomenko, D. V.
Publication type:
Article
New formalism for self-consistent parameters optimization of highly efficient solar cells.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 2, p. 134
By:
- Sachenko, A. V.;
- Kostylyov, V. P.;
- Kulish, M. R.;
- Sokolovskyi, I. O.;
- Shkrebtii, A. I.
Publication type:
Article
Analysis of features of recombination mechanisms in silicon solar cells.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 14
By:
- Korkishko, R. M.;
- Kostylyov, V. P.;
- Prima, N. A.;
- Sachenko, A. V.;
- Serba, O. A.;
- Slusar, T. V.;
- Chernenko, V. V.
Publication type:
Article
On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 1
By:
- Sachenko, A. V.;
- Belyaev, A. E.;
- Boltovets, N. S.;
- Vinogradov, A. O.;
- Pilipenko, V. A.;
- Petlitskaya, T. V.;
- Anischik, V. M.;
- Konakova, R. V.;
- Korostinskaya, T. V.;
- Kostylyov, V. P.;
- Kudryk, Ya. Ya.;
- Lyapin, V. G.;
- Romanets, P. N.;
- Sheremet, V. N.
Publication type:
Article
Lateral multijunction photovoltaic cells.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 1, p. 1
By:
- Sachenko, A. V.;
- Kulish, M. R.;
- Sokolovskyi, I. O.;
- Kostylyov, V. P.
Publication type:
Article
The study of solar cells with back side contacts at low illumination.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 348, doi. 10.15407/spqeo13.04.348
By:
- Gorban, A. P.;
- Kostylyov, V. P.;
- Litovchenko, V. G.;
- Sachenko, A. V.;
- Serba, A. A.;
- Sokolovskyi, I. O.;
- Chernenko, V. V.
Publication type:
Article
Experimental study and theoretical analysis of photoelectric characteristics of AlxGa1-xAs--p-GaAs--n -GaAs -based photoconverters with relief interfaces.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 72, doi. 10.15407/spqeo8.01.072
By:
- Dmitruk, N. L.;
- Borkovskaya, O. Yu.;
- Kostylyov, V. P.;
- Sachenko, A. V.;
- Sokolovskiy, I. O.
Publication type:
Article
Exciton effects in band-edge electroluminescence of silicon barrier structures.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 1, p. 1
By:
- Sachenko, A. V.;
- Gorban, A. P.;
- Korbutyak, D. V.;
- Kostylyov, V. P.;
- Kryuchenko, Yu. V.;
- Chernenko, V. V.
Publication type:
Article
Effect of PEDOT:PSS Layer Deposition on Electrical and Photoelectrical Properties of n+-ZnO/n-Si Heterostructure.
Published in:
Journal of Electronic Materials, 2023, v. 52, n. 5, p. 3112, doi. 10.1007/s11664-023-10276-2
By:
- Gomeniuk, Y. V.;
- Gomeniuk, Y. Y.;
- Kondratenko, S. V.;
- Rudenko, T. E.;
- Vasin, A. V.;
- Rusavsky, A. V.;
- Slobodian, O. M.;
- Tyagulskyy, I. P.;
- Kostylyov, V. P.;
- Vlasiuk, V. M.;
- Tiagulskyi, S. I.;
- Yatskiv, R.;
- Lysenko, V. S.;
- Nazarov, A. N.
Publication type:
Article
Comparative analysis of photoconversion efficiency in the Si solar cells under concentrated illumination for the standard and rear geometries of arrangement of contacts.
Published in:
Semiconductors, 2007, v. 41, n. 10, p. 1214, doi. 10.1134/S106378260710017X
By:
- Sachenko, A. V.;
- Gorban, A. P.;
- Kostylyov, V. P.;
- Serba, A. A.;
- Sokolovskyi, I. O.
Publication type:
Article
The radiative recombination coefficient and the internal quantum yield of electroluminescence in silicon.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 884, doi. 10.1134/S1063782606080045
By:
- Sachenko, A. V.;
- Gorban, A. P.;
- Kostylyov, V. P.;
- Sokolovsky, I. O.
Publication type:
Article
On the Ultimate Quantum Efficiency of Band-Edge Electroluminescence in Silicon Barrier Structures.
Published in:
Semiconductors, 2004, v. 38, n. 5, p. 550, doi. 10.1134/1.1755890
By:
- Sachenko, A. V.;
- Gorban', A. P.;
- Kostylyov, V. P.
Publication type:
Article
The Effect of Base Thickness on Photoconversion Efficiency in Textured Silicon-Based Solar Cells.
Published in:
Technical Physics Letters, 2018, v. 44, n. 10, p. 873, doi. 10.1134/S1063785018100139
By:
- Sachenko, A. V.;
- Kostylyov, V. P.;
- Bobyl, A. V.;
- Vlasyuk, V. N.;
- Sokolovskyi, I. O.;
- Konoplev, G. A.;
- Terukov, E. I.;
- Shvarts, M. Z.;
- Evstigneev, M.
Publication type:
Article

Works by Kostylyov, V. P.

Space charge region recombination in highly efficient silicon solar cells.

Space charge region recombination, non-radiative exciton recombination and the band-narrowing effect in high-efficiency silicon solar cells.

Modeling of characteristics of highly efficient textured solar cells based on c-silicon. The influence of recombination in the space charge region.

Experimental investigation and theoretical modeling of textured silicon solar cells with rear metallization.

Influence of the reagents' ratio on photoelectric and optical properties of perovskite films for photovoltaics.

Simulation and characterization of planar high-efficiency back contact silicon solar cells.

Intelligence system for monitoring and governing the energy efficiency of solar panels to power LED luminaires.

Key parameters of textured silicon solar cells of 26.6% photoconversion efficiency.

Electro-optical characteristics of an innovative LED luminaire with an LED matrix cooling system based on heat pipes.

Influence of the quantum dots bandgap and their dispersion on the loss of luminescent quanta.

Key parameters of commercial silicon solar cells with rear metallization.

Photoconverter with luminescent concentrator. Matrix material.

Impact of semiconductor quantum dots bandgap on reabsorption in luminescent concentrator.

Influence of non-radiative exciton recombination in silicon on photoconversion efficiency. 2. Short Shockley-Read-Hall lifetimes.

The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley-Read-Hall lifetimes.

Luminescent converter of solar light into electrical energy. Review.

Analysis of the silicon solar cells efficiency. Type of doping and level optimization.

Influence of nanostructured ITO films on surface recombination processes in silicon solar cells.

Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator.

New formalism for self-consistent parameters optimization of highly efficient solar cells.

Analysis of features of recombination mechanisms in silicon solar cells.

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n<sup>+</sup>-n doping step.

Lateral multijunction photovoltaic cells.

The study of solar cells with back side contacts at low illumination.

Experimental study and theoretical analysis of photoelectric characteristics of Al<sub>x</sub>Ga<sub>1-x</sub>As--p-GaAs--n -GaAs -based photoconverters with relief interfaces.

Exciton effects in band-edge electroluminescence of silicon barrier structures.

Effect of PEDOT:PSS Layer Deposition on Electrical and Photoelectrical Properties of n<sup>+</sup>-ZnO/n-Si Heterostructure.

Comparative analysis of photoconversion efficiency in the Si solar cells under concentrated illumination for the standard and rear geometries of arrangement of contacts.

The radiative recombination coefficient and the internal quantum yield of electroluminescence in silicon.

On the Ultimate Quantum Efficiency of Band-Edge Electroluminescence in Silicon Barrier Structures.

The Effect of Base Thickness on Photoconversion Efficiency in Textured Silicon-Based Solar Cells.