Works matching AU Koshka, Y.
Results: 4
Relationship between Infrared Photoluminescence and Resistivity in Semi-Insulating 6H-SiC.
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- Journal of Electronic Materials, 2006, v. 35, n. 4, p. 630, doi. 10.1007/s11664-006-0111-3
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- Article
Photoconductivity in Porous GaN Layers.
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- Physica Status Solidi (B), 2001, v. 228, n. 2, p. 589, doi. 10.1002/1521-3951(200111)228:2<589::AID-PSSB589>3.0.CO;2-J
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- Article
Electroluminescent properties of Tb-doped carbon-enriched silicon oxide.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 34
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- Article
Heavily Aluminum-Doped Epitaxial Layers for Ohmic Contact Formation to p-Type 4H-SiC Produced by Low-Temperature Homoepitaxial Growth.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 34, doi. 10.1007/s11664-009-0953-6
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- Article