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Temperature Dependence of the Quantum Efficiency of 4H-SiC-Based Schottky Photodiodes.
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- Technical Physics Letters, 2001, v. 27, n. 9, p. 776, doi. 10.1134/1.1407356
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- Article
Synthesis of New Derivatives of Protoporphyrin IX and Chlorophyll a.
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- Russian Journal of Organic Chemistry, 2005, v. 41, n. 12, p. 1824, doi. 10.1007/s11178-006-0044-6
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- Article
Synthesis of Pyrazoleporphyrins and Pyrazolechlorins by Cyclization of Peripheral ββ-Diketone Groups of Porphyrins and Chlorins with Phenylhydrazines.
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- Russian Journal of Organic Chemistry, 2003, v. 39, n. 11, p. 1683, doi. 10.1023/B:RUJO.0000013152.87007.ea
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- Article
Thermal Stability of Soil Organic Matter in Postagrogenic Luvic Phaeozems.
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- Eurasian Soil Science, 2023, v. 56, p. S139, doi. 10.1134/S1064229323602263
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- Article
Palynological Profile and Depositional Environment of the Ishim Formation (Upper Miocene) in Tobol–Ishim Interfluve, Western Siberia.
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- Stratigraphy & Geological Correlation, 2019, v. 27, n. 6, p. 707, doi. 10.1134/S0869593819060042
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- Article
Two-Term Differential Equations with Matrix Distributional Coefficients.
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- Ukrainian Mathematical Journal, 2015, v. 67, n. 5, p. 711, doi. 10.1007/s11253-015-1109-x
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- Article
Point Spectrum of Singularly Perturbed Self-Adjoint Operators.
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- Ukrainian Mathematical Journal, 2005, v. 57, n. 5, p. 776, doi. 10.1007/s11253-005-0227-2
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- Article
New Random Terpolymers Based on Bis(4,5-didodecylthiophen-2-yl)-[1,2,5]thiadiazolo[3,4-i]dithieno[3,2-a:2',3'-c]phenazine with Variable Absorption Spectrum as Promising Materials for Organic Solar Cells.
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- Doklady Physical Chemistry, 2021, v. 496, n. 1, p. 1, doi. 10.1134/S0012501621010024
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- Article
New Donor–Acceptor Random Terpolymers with Wide Absorption Spectra of 300–1000 nm for Photovoltaic Applications.
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- Doklady Physical Chemistry, 2020, v. 495, n. 2, p. 196, doi. 10.1134/S0012501620120040
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- Article
Synthesis and Photovoltaic Properties of New Conjugated D‐A Polymers Based on the Same Fluoro‐Benzothiadiazole Acceptor Unit and Different Donor Units.
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- ChemistrySelect, 2020, v. 5, n. 2, p. 853, doi. 10.1002/slct.201904353
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- Article
Conversion of Gaseous Hydrocarbons in Cold Electron-Beam Plasma.
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- Petroleum Chemistry, 2019, v. 59, p. S45, doi. 10.1134/S0965544119130127
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- Article
Deposition of Amorphous and Microcrystalline Films of Silicon by the Gas-Jet Plasma-Chemical Method.
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- Semiconductors, 2019, v. 53, n. 12, p. 1712, doi. 10.1134/S1063782619160255
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- Article
Deposition of Silicon Films Doped with Boron and Phosphorus by the Gas-Jet Plasma-Chemical Method.
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- Semiconductors, 2019, v. 53, n. 1, p. 127, doi. 10.1134/S1063782619010184
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- Article
Yurii Aronovich Goldberg (1939-2011).
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- Semiconductors, 2011, v. 45, n. 6, p. 835, doi. 10.1134/S1063782611060182
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- Article
Dependence of the mechanism of current flow in the in- n-GaN alloyed ohmic contact on the majority carrier concentration.
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- Semiconductors, 2008, v. 42, n. 11, p. 1315, doi. 10.1134/S1063782608110134
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- Article
Spatial symmetry of excited states in III–V semiconductors at the Γ point.
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- Semiconductors, 2008, v. 42, n. 8, p. 918, doi. 10.1134/S1063782608080071
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- Article
Theory of catalytic dissociation of hydrogen atoms on a metal surface.
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- Semiconductors, 2008, v. 42, n. 8, p. 931, doi. 10.1134/S1063782608080101
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- Article
The mechanism of current flow in an alloyed In-GaN ohmic contact.
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- Semiconductors, 2006, v. 40, n. 10, p. 1173, doi. 10.1134/S1063782606100095
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- Article
The Tail of Localized States in the Band Gap of the Quantum Well in the In<sub>0.2</sub>Ga<sub>0.8</sub>N/GaN System and Its Effect on the Laser-Excited Photoluminescence Spectrum.
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- Semiconductors, 2005, v. 39, n. 12, p. 1410, doi. 10.1134/1.2140315
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- Article
Thermal–Field Forward Current in GaN-Based Surface-Barrier Structures.
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- Semiconductors, 2005, v. 39, n. 6, p. 674, doi. 10.1134/1.1944858
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- Article
Optical and Electrical Properties of 4H-SiC Irradiated with Fast Neutrons and High-Energy Heavy Ions.
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- Semiconductors, 2004, v. 38, n. 10, p. 1187, doi. 10.1134/1.1808826
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- Article
New Conjugated Polymers Based on Dithieno[2,3‐e:3′,2′‐g]Isoindole‐7,9(8H)‐Dione Derivatives for Applications in Nonfullerene Polymer Solar Cells.
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- Solar RRL, 2020, v. 4, n. 3, p. 1, doi. 10.1002/solr.201900475
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- Article
4H-SiC-based photodetector of Carcinogenic UV radiation.
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- Technical Physics, 2008, v. 53, n. 1, p. 81, doi. 10.1134/S1063784208010155
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- Article
Mechanism of current flow in alloyed ohmic In/GaAs contacts.
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- Technical Physics, 2007, v. 52, n. 2, p. 285, doi. 10.1134/S1063784207020235
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- Article
Conversion of Natural and Associated Petroleum Gases in Cold Electron-Beam Plasma.
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- Plasma Physics Reports, 2018, v. 44, n. 9, p. 886, doi. 10.1134/S1063780X18090143
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- Article
Dependence of the Methane Decomposition Factor in Cold Electron-Beam Plasma upon Input Power.
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- High Energy Chemistry, 2018, v. 52, n. 4, p. 330, doi. 10.1134/S001814391804015X
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- Article
Current Instability in Germanium due to Excitation of the Recombination Waves.
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- Physica Status Solidi (B), 1969, v. 33, n. 2, p. 863, doi. 10.1002/pssb.19690330240
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- Article
Mg-Rich Authigenic Carbonates in Coastal Facies of the Vtoroe Zasechnoe Lake (Southwest Siberia): First Assessment and Possible Mechanisms of Formation.
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- Minerals (2075-163X), 2019, v. 9, n. 12, p. 763, doi. 10.3390/min9120763
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- Article
Mechanism of misfit stress relaxation during epitaxial growth of GaN on porous SiC substrates.
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- Technical Physics Letters, 2006, v. 32, n. 12, p. 1011, doi. 10.1134/S1063785006120042
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- Article
Increasing Laser Excitation Power Induces Large Blue Shift of the Photoluminescence Peak of Quantum Wells in Gallium Nitride.
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- Technical Physics Letters, 2005, v. 31, n. 7, p. 573, doi. 10.1134/1.2001058
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- Article
Peculiarities in the Mechanism of Current Flow through an Ohmic Contact to Gallium Phosphide.
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- Technical Physics Letters, 2004, v. 30, n. 10, p. 806, doi. 10.1134/1.1813716
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- Article
High-Resolution Short Range Ion Detectors Based on 4H-SiC Films.
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- Technical Physics Letters, 2004, v. 30, n. 7, p. 575, doi. 10.1134/1.1783406
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- Article
The Energy Spectrum of Charge Carriers in a Strongly Oblate Ellipsoidal Quantum Dot.
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- Technical Physics Letters, 2002, v. 28, n. 8, p. 693, doi. 10.1134/1.1505553
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- Article
On the Possibility of Creating a Superfast-Recovery Silicon Carbide Diode.
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- Technical Physics Letters, 2002, v. 28, n. 7, p. 544, doi. 10.1134/1.1498779
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- Article
Atomic Force Microscopy of InAs Quantum Dots on the Vicinal Surface of a GaAs Crystal.
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- Technical Physics Letters, 2002, v. 28, n. 2, p. 139, doi. 10.1134/1.1458515
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- Article
A Phenomenological Parameter Characterizing the Relaxation of Stresses Caused by the Lattice Mismatch at a Heteroboundary.
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- Technical Physics Letters, 2001, v. 27, n. 8, p. 683, doi. 10.1134/1.1398968
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- Article
An Active Lasing Region with a Quantum Well and a Quantum Dot Array.
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- Technical Physics Letters, 2001, v. 27, n. 3, p. 248, doi. 10.1134/1.1359841
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- Article
Formation of Germanium Nanocrystals and Amorphous Nanoclusters in GeO[SiO] and GeO[SiO<sub>2</sub>] Films Using Electron Beam Annealing.
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- Technical Physics, 2024, v. 69, n. 4, p. 898, doi. 10.1134/S1063784224030162
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- Article
High-Efficiency Electron Source with a Hollow Cathode in Technologies of Thin Film Deposition and Surface Treatment under Forevacuum Pressures.
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- Technical Physics, 2018, v. 63, n. 6, p. 888, doi. 10.1134/S1063784218060191
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- Article
Theory of scattering of electromagnetic waves of the microwave range in a turbid medium.
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- Technical Physics, 2013, v. 58, n. 2, p. 305, doi. 10.1134/S1063784213020138
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- Article
Wide‐Bandgap Donor–Acceptor Copolymer Based on BDTTz Donor and TPD Acceptor for Polymer Solar Cells Using Fullerene and Nonfullerene Acceptors.
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- Energy Technology, 2022, v. 10, n. 8, p. 1, doi. 10.1002/ente.202200215
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- Article
Ternary Polymer Solar Cells with High Open Circuit Voltage containing Fullerene and New Thieno[3',2',6,7][1]Benzothieno[3,2‐b]Thieno[3,2‐g][1]Benzothiophene‐based Non‐fullerene Small Molecule Acceptor.
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- Energy Technology, 2021, v. 9, n. 5, p. 1, doi. 10.1002/ente.202001100
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- Article
Systemic Suppression of the Contact Hypersensitivity by the Products of Protoporphyrin IX Photooxidation.
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- Photochemistry & Photobiology, 2005, v. 81, n. 6, p. 1380, doi. 10.1562/2005-04-26-RA-500
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- Article
Structure of Energy Quantum Levels in a Quantum Dot Shaped as an Oblate Body of Revolution.
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- Semiconductors, 2003, v. 37, n. 3, p. 317, doi. 10.1134/1.1561526
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- Article
Photoelectric Properties of p[sup +]–n Junctions Based on 4H-SiC Ion-Implanted with Aluminum.
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- Semiconductors, 2002, v. 36, n. 6, p. 706, doi. 10.1134/1.1485675
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- Article
Silicon Carbide Detectors of High-Energy Particles.
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- Semiconductors, 2002, v. 36, n. 6, p. 710, doi. 10.1134/1.1485676
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- Article
Light Emission by Semiconductor Structure with Quantum Well and Array of Quantum Dots.
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- Semiconductors, 2002, v. 36, n. 1, p. 74, doi. 10.1134/1.1434517
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- Article
Mechanism of the Current Flow in Pd–(Heavily Doped p-Al[sub x]Ga[sub 1 – ][sub x]N) Ohmic Contact.
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- Semiconductors, 2001, v. 35, n. 5, p. 529, doi. 10.1134/1.1371616
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- Article
A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p-n structures and Schottky diodes.
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- Semiconductors, 1999, v. 33, n. 7, p. 804, doi. 10.1134/1.1187786
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- Article
Electron-hole Coulomb interaction in InGaN quantum dots.
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- Semiconductors, 1998, v. 32, n. 10, p. 1101, doi. 10.1134/1.1187576
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- Article