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Preparing Permanent Joints of Titanium Alloys with Steel (A Review).
Published in:
Materials Science, 2023, v. 59, n. 2, p. 129, doi. 10.1007/s11003-024-00753-2
By:
- Korzhyk, V. M.;
- Khaskin, V. Yu.;
- Kvasnytskyi, V. V.;
- Ganushchak, O. V.;
- Hos, I. D.;
- Peleshenko, S. I.;
- Demianov, O. I.;
- Konoreva, O. V.;
- Fialko, N. M.
Publication type:
Article
Field effects in electron-irradiated GaP LEDs.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 2, p. 179, doi. 10.15407/spqeo25.02.179
By:
- Vernydub, R. M.;
- Kyrylenko, O. I.;
- Konoreva, O. V.;
- Olikh, Ya. M.;
- Radkevych, O. I.;
- Stratilat, D. P.;
- Tartachnyk, V. P.
Publication type:
Article
Electrophysical characteristics of GaAs1–хPх LEDs irradiated by 2 МeV electrons.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 2, p. 201, doi. 10.15407/spqeo23.02.201
By:
- Vernydub, R. M.;
- Kyrylenko, O. I.;
- Konoreva, O. V.;
- Olikh, Ya. M.;
- Litovchenko, P. G.;
- Pavlovskyy, Yu. V.;
- Potera, P.;
- Tartachnyk, V. P.
Publication type:
Article
Acoustic-stimulated relaxation of GaAs1-xPx LEDs electroluminescence intensity.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 34, doi. 10.15407/spqeo19.01.034
By:
- Konoreva, O. V.;
- Lytovchenko, M. V.;
- Malyi, Ye. V.;
- Olikh, Ya. M.;
- Petrenko, I. V.;
- Pinkovska, M. B.;
- Tartachnyk, V. P.
Publication type:
Article
Low doses effect in GaP light-emitting diodes.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 2, p. 183, doi. 10.15407/spqeo19.02.183
By:
- Hontaruk, O. M.;
- Konoreva, O. V.;
- Malyi, Ye. V.;
- Petrenko, I. V.;
- Pinkovska, M. B.;
- Radkevych, O. I.;
- Tartachnyk, V. P.
Publication type:
Article
Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 312, doi. 10.15407/spqeo18.03.312
By:
- Konoreva, O. V.;
- Lytovchenko, M. V.;
- Malyi, Ye. V.;
- Petrenko, I. V.;
- Pinkovska, M. B.;
- Tartachnyk, V. P.;
- Shlapatska, V. V.
Publication type:
Article
Degradation-Reduction Features of Electrophysical Characteristics of Irradiated Gallium Phosphide Light-Emitting Diodes.
Published in:
Acta Physica Polonica: A, 2021, v. 140, n. 2, p. 141, doi. 10.12693/APhysPolA.140.141
By:
- VERNYDUB, R. M.;
- KYRYLENKO, O. I.;
- KONOREVA, O. V.;
- RADKEVYCH, O. I.;
- STRATILAT, D. P.;
- TARTACHNYK, V. P.
Publication type:
Article
ELECTRICAL AND OPTICAL CHARACTERISTICS OF GaP DIODES, IRRADIATED WITH 2 MeV ELECTRONS.
Published in:
Nuclear Physics & Atomic Energy, 2014, v. 15, n. 4, p. 349
By:
- Konoreva, O. V.;
- Malyj, E. V.;
- Petrenko, I. V.;
- Pinkovska, M. B.;
- Tartachnyk, V. P.;
- Shlapatska, V. V.
Publication type:
Article
PECULIARITIES OF ELECTROOPTICAL CHARACTERISTICS OF GALLIUM PHOSPHIDE LIGHT-EMITTING DIODES IN HIGH INJECTION LEVEL CONDITIONS.
Published in:
Nuclear Physics & Atomic Energy, 2015, v. 16, n. 1, p. 56, doi. 10.15407/jnpae2015.01.056
By:
- Hontaruk, O. M.;
- Konoreva, O. V.;
- Lytovchenko, M. V.;
- Malyi, E. V.;
- Petrenko, I. V.;
- Pinkovska, M. B.;
- Tartachnyk, V. P.
Publication type:
Article
SURFACE DISTRIBUTION OF THE EMITTING INTENSITY OF GaP LIGHT-EMITTING DIODES.
Published in:
Nuclear Physics & Atomic Energy, 2013, v. 14, n. 2, p. 158
By:
- Konoreva, O. V.;
- Litovchenko, P. G.;
- Maliy, E. V.;
- Petrenko, I. V.;
- Pinkovska, M. B.;
- Tartachnyk, V. P.;
- Shlapatska, V. V.
Publication type:
Article

Found: 10

Preparing Permanent Joints of Titanium Alloys with Steel (A Review).

Field effects in electron-irradiated GaP LEDs.

Electrophysical characteristics of GaAs<sub>1–х</sub>P<sub>х</sub> LEDs irradiated by 2 МeV electrons.

Acoustic-stimulated relaxation of GaAs<sub>1-x</sub>P<sub>x</sub> LEDs electroluminescence intensity.

Low doses effect in GaP light-emitting diodes.

Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons.

Degradation-Reduction Features of Electrophysical Characteristics of Irradiated Gallium Phosphide Light-Emitting Diodes.

ELECTRICAL AND OPTICAL CHARACTERISTICS OF GaP DIODES, IRRADIATED WITH 2 MeV ELECTRONS.

PECULIARITIES OF ELECTROOPTICAL CHARACTERISTICS OF GALLIUM PHOSPHIDE LIGHT-EMITTING DIODES IN HIGH INJECTION LEVEL CONDITIONS.

SURFACE DISTRIBUTION OF THE EMITTING INTENSITY OF GaP LIGHT-EMITTING DIODES.