Potential distribution in voltage terminating structures with floating p-n junction rings of silicon radiation detectors.Published in:Semiconductors, 2011, v. 45, n. 4, p. 536, doi. 10.1134/S1063782611040221By:Verbitskaya, E.;Eremin, V.;Safonova, N.;Eremin, I.;Tuboltsev, Yu.;Golubkov, S.;Konkov, K.Publication type:Article
Intersegment resistance in silicon p— n-Junction position-sensitive detectors.Published in:Semiconductors, 2009, v. 43, n. 6, p. 796, doi. 10.1134/S1063782609060207By:Eremin, V. K.;Verbitskaya, E. M.;Ilyashenko, I. N.;Eremin, I. V.;Safonova, N. N.;Tuboltsev, Yu. V.;Egorov, N. N.;Golubkov, S. A.;Konkov, K. A.Publication type:Article