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Charge‐Transfer‐Mediated Exciton Dynamics in Van der Waals Antiferromagnet NiPS<sub>3</sub>.
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- Advanced Functional Materials, 2024, v. 34, n. 40, p. 1, doi. 10.1002/adfm.202402161
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Migration-Enhanced Epitaxial Growth of InAs/GaAs Short-Period Superlattices for THz Generation.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 3, p. 294, doi. 10.3390/nano14030294
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Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy.
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- Materials (1996-1944), 2024, v. 17, n. 4, p. 845, doi. 10.3390/ma17040845
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Low-Temperature Migration-Enhanced Epitaxial Growth of High-Quality (InAs) 4 (GaAs) 3 /Be-Doped InAlAs Quantum Wells for THz Applications.
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- Crystals (2073-4352), 2024, v. 14, n. 5, p. 421, doi. 10.3390/cryst14050421
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- Article