Works by Konakova, R. V.

Results: 78

Formation of titanium oxide films on the surface of porous silicon carbide.

Published in:

Technical Physics, 2008, v. 53, n. 9, p. 1232, doi. 10.1134/S1063784208090168

By:

Bacherikov, Yu. Yu.;
Dmitruk, N. L.;
Konakova, R. V.;
Kondratenko, O. S.;
Milenin, V. V.;
Okhrimenko, O. B.;
Kapitanchuk, L. M.;
Svetlichnyi, A. M.;
Moskovchenko, N. N.

Publication type:

Article

Effect of Microwave Annealing on Silicon Dioxide/Silicon Carbide Structures.

Published in:

Technical Physics, 2003, v. 48, n. 5, p. 598, doi. 10.1134/1.1576474

By:

Bacherikov, Yu. Yu.;
Konakova, R. V.;
Kocherov, A. N.;
Lytvyn, P. M.;
Lytvyn, O. S.;
Okhrimenko, O. B.;
Svetlichnyi, A. M.

Publication type:

Article

Phase Interactions in TiN[sub x](TiB[sub x])–n-Si–n[sup +]-Si Contacts and Their Thermal Degradation Due to Rapid Thermal Annealing.

Published in:

Technical Physics, 2003, v. 48, n. 4, p. 441, doi. 10.1134/1.1568486

By:

Boltovets, N. S.;
Ivanov, V. N.;
Konakova, R. V.;
Milenin, V. V.;
Voıtsikhovskiı, D. I.

Publication type:

Article

Effect of Gamma Irradiation on Photoconversion Characteristics of Metal/Gallium Arsenide Barrier Structures with Textured Interface.

Published in:

Technical Physics, 2002, v. 47, n. 6, p. 698, doi. 10.1134/1.1486191

By:

Dmitruk, N. L.;
Borkovskaya, O. Yu.;
Konakova, R. V.;
Mamontova, I. B.;
Mamykin, S. V.;
Voitsikhovskiy, D. I.

Publication type:

Article

The Formation and Thermal Stability of Multilayer Ohmic Contacts to n-GaAs with TiB[sub x] and Mo Diffusion Barriers.

Published in:

Technical Physics, 2000, v. 45, n. 11, p. 1452, doi. 10.1134/1.1325029

By:

Milenin, V. V.;
Konakova, R. V.;
Ivanov, V. N.;
Beketov, G. V.;
Poludin, V. I.;
Ermolovich, I. B.

Publication type:

Article

Investigation of gallium arsenide single crystals with various crystallographic orientations, after implantation of silicon ions and pulsed photon annealing.

Published in:

Technical Physics, 1999, v. 44, n. 5, p. 548, doi. 10.1134/1.1259381

By:

Vasil’kovskiı, S. V.;
Konakova, R. V.;
Tkhorik, Yu. A.;
Dukhnovskiı, M. P.

Publication type:

Article

Influence of microwave treatment on the electrophysical characteristics of technically important semiconductors and surface-barrier structures.

Published in:

Technical Physics, 1998, v. 43, n. 12, p. 1445, doi. 10.1134/1.1259222

By:

Belyaev, A. A.;
Belyaev, A. E.;
Ermolovich, I. B.;
Komirenko, S. M.;
Konakova, R. V.;
Lyapin, V. G.;
Milenin, V. V.;
Solov’ev, E. A.;
Shevelev, M. V.

Publication type:

Article

Silicon diffused diodes with nearly ideal current–voltage characteristics.

Published in:

Technical Physics, 1998, v. 43, n. 10, p. 1257, doi. 10.1134/1.1259167

By:

Boltovets, N. S.;
Ismaılov, K. A.;
Konakova, R. V.;
Tagaev, M. B.

Publication type:

Article

Relationship between the electronic properties of the interface and the interphase interactions in NbN–GaAs heterostructures.

Published in:

Technical Physics, 1998, v. 43, n. 1, p. 56, doi. 10.1134/1.1258936

By:

Belyaev, A. A.;
Venger, E. F.;
Lyapin, V. G.;
Konakova, R. V.;
Milenin, V. V.;
Tkhorik, Yu. A.;
Hotovy, I.;
Kashin, G. N.

Publication type:

Article

Properties of Al, (AuGe)–GaAs contacts fabricated by combining ion-beam treatment and metallization.

Published in:

Technical Physics, 1997, v. 42, n. 2, p. 232, doi. 10.1134/1.1258631

By:

Ermolovich, I. B.;
Yu. Il’in, I.;
Konakova, R. V.;
Milenin, V. V.

Publication type:

Article

Morphology and optical properties of titanium-doped porous silicon carbide layers.

Published in:

Technical Physics Letters, 2006, v. 32, n. 2, p. 140, doi. 10.1134/S1063785006020167

By:

Bacherikov, Yu. Yu.;
Konakova, R. V.;
Lytvyn, O. S.;
Okhrimenko, O. B.;
Svetlichnyi, A. M.;
Moskovchenko, N. N.

Publication type:

Article

Thermal Stability of Multilayer Contacts on Gallium Nitride.

Published in:

Technical Physics Letters, 2005, v. 31, n. 12, p. 1078, doi. 10.1134/1.2150904

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Lytvyn, P. M.;
Milenin, V. V.;
Sveshnikov, Yu. N.

Publication type:

Article

Peculiarities of the Formation and Thermal Stability of Barrier Contacts in High-Sensitivity Silicon Carbide Detector Diodes.

Published in:

Technical Physics Letters, 2003, v. 29, n. 1, p. 22, doi. 10.1134/1.1544337

By:

Boltovets, N. S.;
Zorenko, A. V.;
Ivanov, V. N.;
Vlaskina, S. I.;
Konakova, R. V.;
Kudrik, Ya. Ya.;
Litvin, P. M.;
Litvin, O. S.;
Milenin, V. V.;
Abdizhaliev, S. K.

Publication type:

Article

Structural and Electrical Characteristics of Epitaxial InP Layers on Porous Substrates and the Parameters of Related Au–Ti Schottky Barriers.

Published in:

Technical Physics Letters, 2002, v. 28, n. 9, p. 735

By:

Arsent’ev, I. N.;
Baıdakova, M. V.;
Bobyl’, A. V.;
Vavilova, L. S.;
Konnikov, S. G.;
Ulin, V. P.;
Boltovets, N. S.;
Konakova, R. V.;
Milenin, V. V.;
Voıtsikhovskiı, D. I.

Publication type:

Article

Microwave-Stimulated Relaxation of Internal Strains in GaAs-Based Device Heterostructures.

Published in:

Technical Physics Letters, 2002, v. 28, n. 2, p. 154, doi. 10.1134/1.1458520

By:

Boltovets, N. S.;
Kamalov, A. B.;
Kolyadina, E. Yu.;
Konakova, R. V.;
Lytvyn, P. M.;
Lytvyn, O. S.;
Matveeva, L. A.;
Milenin, V. V.;
Rengevych, O. E.

Publication type:

Article

Solid-State Reactions in TiB[sub x]–GaAs Contact Structures upon Rapid Thermal Annealing.

Published in:

Technical Physics Letters, 2001, v. 27, n. 7, p. 586, doi. 10.1134/1.1388952

By:

Milenin, V. V.;
Konakova, R. V.

Publication type:

Article

Nature of the transitional region during the deposition of titanium boride and nitride films on gallium arsenide.

Published in:

Technical Physics Letters, 1999, v. 25, n. 10, p. 789, doi. 10.1134/1.1262636

By:

Ermolovich, I. B.;
Konakova, R. V.;
Milenin, V. V.;
Senkevich, A. I.

Publication type:

Article

Electrical characteristics of GaAs LPE schottky diodes.

Published in:

Crystal Research & Technology, 1983, v. 18, n. 11, p. 1451, doi. 10.1002/crat.2170181131

By:

Konakova, R. V.;
Tkhorik, Yu. A.;
Zaitsevskii, I. L.;
Benč, V.;
Morvic, M.;
Kordoš, P.;
Červenák, J.

Publication type:

Article

Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 469, doi. 10.1134/S1063782619040055

By:

Belyaev, A. E.;
Boltovets, N. S.;
Klad'ko, V. P.;
Safryuk-Romanenko, N. V.;
Lubchenko, A. I.;
Sheremet, V. N.;
Shynkarenko, V. V.;
Slepova, A. S.;
Pilipenko, V. A.;
Petlitskaya, T. V.;
Pilipchuk, A. S.;
Konakova, R. V.;
Sachenko, A. V.

Publication type:

Article

Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density.

Published in:

Semiconductors, 2013, v. 47, n. 9, p. 1180, doi. 10.1134/S1063782613090212

By:

Sachenko, A. V.;
Belyaev, A. E.;
Boltovets, N. S.;
Zhilyaev, Yu. V.;
Kapitanchuk, L. M.;
Klad’ko, V. P.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Naumov, A. V.;
Panteleev, V. N.;
Sheremet, V. N.

Publication type:

Article

X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure.

Published in:

Semiconductors, 2010, v. 44, n. 9, p. 1199, doi. 10.1134/S1063782610090174

By:

Strelchuk, V. V.;
Kladko, V. P.;
Avramenko, E. A.;
Kolomys, O. F.;
Safryuk, N. V.;
Konakova, R. V.;
Yavich, B. S.;
Valakh, M. Ya.;
Machulin, V. F.;
Belyaev, A. E.

Publication type:

Article

Effect of microwave treatment on current flow mechanisms in Au-TiBx-Al-Ti-n+-n-n+-GaN-Al2O3 ohmic contacts.

Published in:

Semiconductors, 2010, v. 44, n. 6, p. 745, doi. 10.1134/S1063782610060102

By:

Belyaev, A. E.;
Boltovets, N. S.;
Vitusevich, S. A.;
Ivanov, V. N.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Lebedev, A. A.;
Milenin, V. V.;
Sveshnikov, Yu. N.;
Sheremet, V. N.

Publication type:

Article

Radiation damage of contact structures with diffusion barriers exposed to irradiation with 60Coγ-ray photons.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 448, doi. 10.1134/S106378261004007X

By:

Belyaev, A. E.;
Boltovets, N. S.;
Konakova, R. V.;
Milenin, V. V.;
Sveshnikov, Yu. N.;
Sheremet, V. N.

Publication type:

Article

Reduction in absorption in quartz/Si, quartz/Si/SiO2, and SiC/Si/SiO2 structures on laser treatment.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 309, doi. 10.1134/S1063782610030061

By:

Lissotschenko, V. N.;
Konakova, R. V.;
Konoplev, B. G.;
Kushnir, V. V.;
Okhrimenko, O. B.;
Svetlichnyi, A. M.

Publication type:

Article

Interphase interactions and the mechanism of current flow in Au-TiB x-AuGe- n-GaP ohmic contacts.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1428, doi. 10.1134/S1063782609110062

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Kamalov, A. B.;
Kapitanchuk, L. M.;
Kladko, V. P.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Milenin, V. V.;
Nasyrov, M. U.;
Nevolin, P. V.

Publication type:

Article

Properties of GaN(SiC)-(Ti, Zr)B x contacts subjected to rapid thermal annealing.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1086, doi. 10.1134/S1063782609080223

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Konakova, R. V.;
Kladko, V. P.;
Kudryk, Ya. Ya.;
Lebedev, A. A.;
Milenin, V. V.;
Sheremet, V. N.

Publication type:

Article

Radiation effects in multilayer ohmic contacts Au-Ti-Al-Ti- n-GaN.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 872, doi. 10.1134/S1063782609070082

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Kapitanchuk, L. M.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Lytvyn, O. S.;
Milenin, V. V.;
Sheremet, V. N.;
Sveshnikov, Yu. N.

Publication type:

Article

Au-TiB x- n-6 H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 865, doi. 10.1134/S1063782609070070

By:

Ageev, O. A.;
Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Lytvyn, P. M.;
Milenin, V. V.;
Sachenko, A. V.

Publication type:

Article

Photoconverters based on gallium arsenide diffused p-n junctions formed on a microprofile GaAs surface.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 368, doi. 10.1134/S1063782609030208

By:

Akopyan, A. A.;
Bachronov, Kh. N.;
Borkovskaya, O. Yu.;
Dmitruk, N. L.;
Yodgorova, D. M.;
Karimov, A. V.;
Konakova, R. V.;
Mamontova, I. B.

Publication type:

Article

Properties of barrier contacts with nanosize TiB x layers to InP.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 777, doi. 10.1134/S1063782608070051

By:

Arsentyev, I. N.;
Bobyl, A. V.;
Tarasov, I. S.;
Boltovets, N. S.;
Ivanov, V. N.;
Belyaev, A. E.;
Kamalov, A. B.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Lytvyn, O. S.;
Milenin, V. V.;
Russu, E. V.

Publication type:

Article

Changes in characteristics of gadolinium, titanium, and erbium oxide films on the SiC surface under microwave treatment.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 868, doi. 10.1134/S1063782608070191

By:

Bacherikov, Yu. Yu.;
Konakova, R. V.;
Milenin, V. V.;
Okhrimenko, O. B.;
Svetlichnyi, A. M.;
Polyakov, V. V.

Publication type:

Article

Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 689, doi. 10.1134/S1063782608060092

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Klad'ko, V. P.;
Konakova, R. V.;
Kudrik, Ya. Ya.;
Kuchuk, A. V.;
Milenin, V. V.;
Sveshnikov, Yu. N.;
Sheremet, V. N.

Publication type:

Article

Diffusion-barrier contacts based on the TiN and Ti(Zr)Bx interstitial phases in the microwave diodes for the range of 75–350 GHz.

Published in:

Semiconductors, 2006, v. 40, n. 6, p. 734, doi. 10.1134/S1063782606060200

By:

Boltovets, N. S.;
Ivanov, V. N.;
Belyaev, A. E.;
Konakova, R. V.;
Kudrik, Ya. Ya.;
Milenin, V. V.;
Arsent'ev, I. N.;
Bobyl, A. V.;
Brunkov, P. N.;
Tarasov, I. S.;
Tonkikh, A. A.;
Ulin, V. P.;
Ustinov, V. V.;
Cirlin, G. E.

Publication type:

Article

Special Features of Formation and Characteristics of Ni/21R-SiC Schottky Diodes.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 456, doi. 10.1134/1.1568468

By:

Litvinov, V. L.;
Demakov, K. D.;
Ageev, O. A.;
Svetlichny, A. M.;
Konakova, R. V.;
Lytvyn, P. M.;
Lytvyn, O. S.;
Milenin, V. V.

Publication type:

Article

The Transition Layer in TiB[sub 2]–GaAs and Au–TiB[sub 2]–GaAs Schottky Contacts.

Published in:

Semiconductors, 2001, v. 35, n. 4, p. 427, doi. 10.1134/1.1365188

By:

Venger, E. F.;
Konakova, R. V.;
Okhrimenko, O. B.;
Sapko, S. Yu.;
Shekhovtsov, L. V.;
Ivanov, V. N.

Publication type:

Article

Formation and thermal stability of contacts based on titanium borides and titanium nitrides with gallium arsenide.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 865, doi. 10.1134/1.1187800

By:

Venger, E. F.;
Milenin, V. V.;
Ermolovich, I. B.;
Konakova, R. V.;
Ivanov, V. N.;
Voıtsikhovskiı, D. I.

Publication type:

Article

Effect of ultrasonic treatment on deformation effects and the structure of local centers in the substrate and in the contact regions of M/n-n[sup +]-GaAs structures (M=Pt, Cr, W).

Published in:

Semiconductors, 1997, v. 31, n. 4, p. 427, doi. 10.1134/1.1187177

By:

Ermolovich, I. B.;
Milenin, V. V.;
Konakova, R. V.;
Primenko, L. N.;
Prokopenko, I. V.;
Gromashevskiı, V. L.

Publication type:

Article

Redistribution of radiative recombination centers in the SiC/por-SiC/Dy2O3 structure under the influence of athermal microwave irradiation.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2024, v. 27, n. 3, p. 274, doi. 10.15407/spqeo27.03.274

By:

Okhrimenko, O. B.;
Bacherikov, Yu. Yu.;
Kolomys, O. F.;
Maziar, D. M.;
Strelchuk, V. V.;
Lytvyn, V. K.;
Konakova, R. V.

Publication type:

Article

Relationship between oxidation, stresses, morphology, local resistivity, and optical properties of TiO2, Gd2O3, Er2O3, SiO2 thin films on SiC.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 260, doi. 10.15407/spqeo26.03.260

By:

Okhrimenko, O. B.;
Bacherikov, Yu. Yu.;
Lytvyn, P. M.;
Lytvyn, O. S.;
Goroneskul, V. Yu.;
Konakova, R. V.

Publication type:

Article

Redistribution of centers responsible for radiative recombination in SiC/por-SiC and SiC/por-SiC/Er2O3 structures under nonthermal action of microwave radiation.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 4, p. 355, doi. 10.15407/spqeo25.04.355

By:

Okhrimenko, O. B.;
Bacherikov, Yu. Yu.;
Kolomys, O. F.;
Strelchuk, V. V.;
Konakova, R. V.

Publication type:

Article

Comparative characteristics of TiO2(Er2O3, Dy2O3)/por-SiC/SiC heterostructures (Review).

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 253, doi. 10.15407/spqeo23.03.253

By:

Bacherikov, Yu. Yu.;
Konakova, R. V.;
Okhrimenko, O. B.

Publication type:

Article

Peculiarities of study of Au-Ti-Pd-n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 1, p. 34, doi. 10.15407/spqeo22.01.34

By:

Romanets, P. M.;
Konakova, R. V.;
Boltovets, M. S.;
Basanets, V. V.;
Kudryk, Ya. Ya.;
Slipokurov, V. S.

Publication type:

Article

Method for data processing in application to ohmic contacts.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 1, p. 11, doi. 10.15407/spqeo22.01.11

By:

Belyaev, A. E.;
Boltovets, N. S.;
Konakova, R. V.;
Kovtonjuk, V. M.;
Kudryk, Ya. Ya.;
Shynkarenko, V. V.;
Dub, M. M.;
Saj, P. O.;
Novitskii, S. V.

Publication type:

Article

Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 4, p. 360, doi. 10.15407/spqeo21.04.360

By:

Bacherikov, Yu. Yu.;
Konakova, R. V.;
Okhrimenko, O. B.;
Berezovska, N. I.;
Lytvyn, O. S.;
Kapitanchuk, L. M.;
Svetlichnyi, A. M.

Publication type:

Article

Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 2, p. 200, doi. 10.15407/spqeo21.02.200

By:

Bacherikov, Yu. Yu.;
Dmitruk, N. L.;
Konakova, R. V.;
Kolomys, O. F.;
Okhrimenko, O. B.;
Strelchuk, V. V.;
Lytvyn, O. S.;
Kapitanchuk, L. M.;
Svetlichnyi, A. M.

Publication type:

Article

Physical mechanisms providing formation of ohmic contacts metal-semiconductor (Review).

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 1, p. 5, doi. 10.15407/spqeo21.01.005

By:

Sachenko, A. V.;
Konakova, R. V.;
Belyaev, A. E.

Publication type:

Article

Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 465, doi. 10.15407/spqeo20.04.465

By:

Bacherikov, Yu. Yu.;
Konakova, R. V.;
Okhrimenko, O. B.;
Berezovska, N. I.;
Kapitanchuk, L. M.;
Svetlichnyi, A. M.

Publication type:

Article

Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 250, doi. 10.15407/spqeo20.02.250

By:

Vakhnyak, N. D.;
Lotsko, O. P.;
Budzulyak, S. I.;
Demchyna, L. A.;
Korbutyak, D. V.;
Konakova, R. V.;
Red'ko, R. A.;
Okhrimenko, O. B.;
Berezovska, N. I.

Publication type:

Article

Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 250, doi. 10.15407/spqeo20.02.250

By:

Vakhnyak, N. D.;
Lotsko, O. P.;
Budzulyak, S. I.;
Demchyna, L. A.;
Korbutyak, D. V.;
Konakova, R. V.;
Red'ko, R. A.;
Okhrimenko, O. B.;
Berezovska, N. I.

Publication type:

Article

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au-Ti-Pd-n+-n-n+-Si in IMPATT diodes.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 366, doi. 10.15407/spqeo19.04.366

By:

Romanets, P. M.;
Belyaev, A. E.;
Sachenko, A. V.;
Boltovets, N. S.;
Basanets, V. V.;
Konakova, R. V.;
Slipokurov, V. S.;
Khodin, A. A.;
Pilipenko, V. A.;
Shynkarenko, V. V.;
Kudryk, Ya. Ya.

Publication type:

Article