Works by Kon’kov, O. I.

Results: 27

Effect of Doping with Nitrogen on Electrical Properties and Erbium Electroluminescence of a-Si:H(Er) Films.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1197, doi. 10.1134/1.1410664

By:

Kon’kov, O. I.;
Terukov, E. I.;
Granitsyna, L. S.

Publication type:

Article

Effect of Erbium on Electronic Traps in PECVD-grown a-Si:H(Er)/c-Si Structures.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 621, doi. 10.1134/1.1379390

By:

Lysenko, V. S.;
Tyagulskiı, I. P.;
Osiyuk, I. N.;
Nazarov, A. N.;
Vovk, Ya. N.;
Gomenyuk, Yu. V.;
Terukov, E. I.;
Kon’kov, O. I.

Publication type:

Article

The Meissner Effect in Copper-Containing Fullerides.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 659

By:

Prikhod’ko, A. V.;
Kon’kov, O. I.

Publication type:

Article

The Influence of Erbium on Electrical and Photoelectric Properties of Amorphous Silicon Produced by Radio-Frequency Silane Decomposition.

Published in:

Semiconductors, 2000, v. 34, n. 7, p. 829, doi. 10.1134/1.1188083

By:

Terukov, E. I.;
Kazanin, M. M.;
Kon’kov, O. I.;
Kudoyarova, V. Kh.;
Kougiya, K. V.;
Nikulin, Yu. A.;
Kazanskiı, A. G.

Publication type:

Article

Current–Voltage Characteristics of Electroluminescent Me/(a-Si:H):Er/c-Si Structures Prepared by Magnetron Sputtering.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 598, doi. 10.1134/1.1188035

By:

Ivanov, P. A.;
Kon’kov, O. I.;
Terukov, E. I.

Publication type:

Article

Structure and Properties of a-Si:H Films Grown by Cyclic Deposition.

Published in:

Semiconductors, 2000, v. 34, n. 4, p. 477

By:

Afanas’ev, V. P.;
Gudovskikh, A. S.;
Kon’kov, O. I.;
Kazanin, M. M.;
Kougiya, K. V.;
Sazanov, A. P.;
Trapeznikova, I. N.;
Terukov, E. I.

Publication type:

Article

The Influence of Local Surroundings of Er Atoms on the Kinetics of Decay of Er Photoluminescence in Amorphous Hydrogenated Silicon.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 92, doi. 10.1134/1.1187952

By:

Terukov, E. I.;
Kudoyarova, V. Kh.;
Kon’kov, O. I.;
Konstantinova, E. A.;
Kamenev, B. V.;
Timoshenko, V. Yu.

Publication type:

Article

Influence of the substrate temperature and annealing on the 1.54-μm erbium photoluminescence of a-Si:H films obtained using a glow discharge.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 177, doi. 10.1134/1.1187888

By:

Terukov, E. I.;
Kon’kov, O. I.;
Kudoyarova, V. Kh.;
Gusev, O. B.;
Weiser, G.;
Kuehne, H.

Publication type:

Article

Luminescence of erbium in amorphous hydrogenated silicon obtained by the glow-discharge method.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 884, doi. 10.1134/1.1187477

By:

Terukov, E. I.;
Kon’kov, O. I.;
Kudoyarova, V. Kh.;
Gusev, O. B.;
Weiser, G.

Publication type:

Article

Influence of plasma treatment of the surface of silicon carbide on the characteristics of buried-gate junction field-effect transistors.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1212, doi. 10.1134/1.1187295

By:

Ivanov, P. A.;
Kon’kov, O. I.;
Panteleev, V. N.;
Samsonova, T. P.

Publication type:

Article

4<italic>H</italic>-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers.

Published in:

Technical Physics Letters, 2018, v. 44, n. 2, p. 87, doi. 10.1134/S1063785018020086

By:

Ivanov, P. A.;
Kon'kov, O. I.;
Samsonova, T. P.;
Potapov, A. S.

Publication type:

Article

High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 243, doi. 10.1134/S1063782621020147

By:

Ivanov, P. A.;
Lebedeva, N. M.;
Il'inskaya, N. D.;
Kudoyarov, M. F.;
Samsonova, T. P.;
Kon'kov, O. I.;
Zadiranov, Yu. M.

Publication type:

Article

Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode.

Published in:

Semiconductors, 2020, v. 54, n. 1, p. 144, doi. 10.1134/S1063782620010108

By:

Il'inskaya, N. D.;
Lebedeva, N. M.;
Zadiranov, Yu. M.;
Ivanov, P. A.;
Samsonova, T. P.;
Kon'kov, O. I.;
Potapov, A. S.

Publication type:

Article

Excess leakage currents in high-voltage 4 H-SiC Schottky diodes.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 653, doi. 10.1134/S1063782610050180

By:

Ivanov, P. A.;
Grekhov, I. V.;
Potapov, A. S.;
Samsonova, T. P.;
Il'inskaya, N. D.;
Kon'kov, O. I.;
Serebrennikova, O. Yu.

Publication type:

Article

Experimental 4 H-SiC junction-barrier Schottky (JBS) diodes.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1209, doi. 10.1134/S106378260909019X

By:

Ivanov, P. A.;
Grekhov, I. V.;
Potapov, A. S.;
Il'inskaya, N. D.;
Samsonova, T. P.;
Kon'kov, O. I.

Publication type:

Article

Photosensitive Structures Based on Single-Crystal Silicon and Phthalocyanine CuPc: Fabrication and Properties.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1018, doi. 10.1134/1.1797478

By:

Il'chuk, G. A.;
Klimova, N. V.;
Kon'kov, O. I.;
Nikitin, S. E.;
Nikolaev, Yu. A.;
Rudaya, L. I.;
Rud, V. Yu.;
Rud, Yu. V.;
Terukov, E. I.;
Shamanin, V. V.;
Yurre, T. A.

Publication type:

Article

The Formation of β-FeSi[sub 2] Precipitates in Microcrystalline Si.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1235, doi. 10.1134/1.1521222

By:

Terukov, E. I.;
Kon’kov, O. I.;
Kudoyarova, V. Kh.;
Gusev, O. B.;
Davydov, V. Yu.;
Mosina, G. N.

Publication type:

Article

Erbium Electroluminescence in p–i–n Amorphous Hydrogenated Silicon Structures.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1240, doi. 10.1134/1.1521223

By:

Terukov, E. I.;
Gusev, O. B.;
Kon’kov, O. I.;
Undalov, Yu. K.;
Stutzmann, M.;
Janotta, A.;
Mell, H.;
Kleider, J. P.

Publication type:

Article

Conductivity and Structure of Er-Doped Amorphous Hydrogenated Silicon Films.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1248, doi. 10.1134/1.1521225

By:

Kon’kov, O. I.;
Terukov, E. I.;
Granitsina, L. S.

Publication type:

Article

The Effect of Texturing of Silicon Wafer Surfaces for Solar Photoelectric Transducers on Their Strength Properties.

Published in:

Technical Physics, 2020, v. 65, n. 7, p. 1123, doi. 10.1134/S1063784220070191

By:

Shpeizman, V. V.;
Nikolaev, V. I.;
Pozdnyakov, A. O.;
Bobyl', A. V.;
Timashov, R. B.;
Averkin, A. I.;
Nikitin, S. E.;
Kon'kov, O. I.;
Shelopin, G. G.;
Terukov, E. I.;
Nashchekin, A. V.

Publication type:

Article

Erbium Electroluminescence in an Al/a-Si:H(Er)/p-c-Si/Al Heterostructure.

Published in:

Technical Physics Letters, 2001, v. 27, n. 7, p. 542, doi. 10.1134/1.1388936

By:

Kon’kov, I. O.;
Kuznetsov, A. N.;
Pak, P. E.;
Terukov, E. I.;
Granitsyna, L. S.

Publication type:

Article

The Ablation Threshold in Amorphous Diamondlike Carbon Films Exposed to an ArF Excimer Laser Radiation.

Published in:

Technical Physics Letters, 2000, v. 26, n. 12, p. 1032, doi. 10.1134/1.1337244

By:

Kaliteevskaya, N. A.;
Kon’kov, O. I.;
Terukov, E. I.;
Seısyan, R. P.

Publication type:

Article

Microwave Experiment on a Costas-Array Ref lecting Screen.

Published in:

Technical Physics Letters, 2000, v. 26, n. 3, p. 236, doi. 10.1134/1.1262803

By:

Kon’kov, O. I.;
Prikhod’ko, A. V.

Publication type:

Article

Characteristics of microwave radiation from copper-containing fullerene resonators at liquid-nitrogen temperatures.

Published in:

Technical Physics Letters, 1999, v. 25, n. 10, p. 820, doi. 10.1134/1.1262647

By:

Kon’kov, O. I.;
Prikhod’ko, A. V.

Publication type:

Article

Gas-sensitive properties of copper-containing fullerene membranes.

Published in:

Technical Physics Letters, 1999, v. 25, n. 4, p. 326, doi. 10.1134/1.1262468

By:

Masterov, V. F.;
Prikhod’ko, A. V.;
Kon’kov, O. I.;
Shakhraı, M. V.;
Shaklanov, A. A.

Publication type:

Article

Intense luminescence with a tunable wavelength from films of tetrahedral amorphous hydrogenated carbon on a fused quartz substrate.

Published in:

Technical Physics Letters, 1997, v. 23, n. 2, p. 160, doi. 10.1134/1.1261571

By:

Kompan, M. E.;
Kon’kov, O. I.;
Terukov, E. I.;
Trapeznikova, I. N.;
Shabanov, I. Yu.

Publication type:

Article

Measurement of the amount of free and bound hydrogen in amorphous carbon.

Published in:

Technical Physics Letters, 1997, v. 23, n. 1, p. 9, doi. 10.1134/1.1261626

By:

Kon’kov, O. I.;
Kapitonov, I. N.;
Trapeznikova, I. N.;
Terukov, E. I.

Publication type:

Article