Works by Kon’kov, O. I.

Results: 27

High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 243, doi. 10.1134/S1063782621020147
By:
- Ivanov, P. A.;
- Lebedeva, N. M.;
- Il'inskaya, N. D.;
- Kudoyarov, M. F.;
- Samsonova, T. P.;
- Kon'kov, O. I.;
- Zadiranov, Yu. M.
Publication type:
Article
Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 144, doi. 10.1134/S1063782620010108
By:
- Il'inskaya, N. D.;
- Lebedeva, N. M.;
- Zadiranov, Yu. M.;
- Ivanov, P. A.;
- Samsonova, T. P.;
- Kon'kov, O. I.;
- Potapov, A. S.
Publication type:
Article
Characteristics of microwave radiation from copper-containing fullerene resonators at liquid-nitrogen temperatures.
Published in:
Technical Physics Letters, 1999, v. 25, n. 10, p. 820, doi. 10.1134/1.1262647
By:
- Kon’kov, O. I.;
- Prikhod’ko, A. V.
Publication type:
Article
Gas-sensitive properties of copper-containing fullerene membranes.
Published in:
Technical Physics Letters, 1999, v. 25, n. 4, p. 326, doi. 10.1134/1.1262468
By:
- Masterov, V. F.;
- Prikhod’ko, A. V.;
- Kon’kov, O. I.;
- Shakhraı, M. V.;
- Shaklanov, A. A.
Publication type:
Article
Intense luminescence with a tunable wavelength from films of tetrahedral amorphous hydrogenated carbon on a fused quartz substrate.
Published in:
Technical Physics Letters, 1997, v. 23, n. 2, p. 160, doi. 10.1134/1.1261571
By:
- Kompan, M. E.;
- Kon’kov, O. I.;
- Terukov, E. I.;
- Trapeznikova, I. N.;
- Shabanov, I. Yu.
Publication type:
Article
Measurement of the amount of free and bound hydrogen in amorphous carbon.
Published in:
Technical Physics Letters, 1997, v. 23, n. 1, p. 9, doi. 10.1134/1.1261626
By:
- Kon’kov, O. I.;
- Kapitonov, I. N.;
- Trapeznikova, I. N.;
- Terukov, E. I.
Publication type:
Article
The Effect of Texturing of Silicon Wafer Surfaces for Solar Photoelectric Transducers on Their Strength Properties.
Published in:
Technical Physics, 2020, v. 65, n. 7, p. 1123, doi. 10.1134/S1063784220070191
By:
- Shpeizman, V. V.;
- Nikolaev, V. I.;
- Pozdnyakov, A. O.;
- Bobyl', A. V.;
- Timashov, R. B.;
- Averkin, A. I.;
- Nikitin, S. E.;
- Kon'kov, O. I.;
- Shelopin, G. G.;
- Terukov, E. I.;
- Nashchekin, A. V.
Publication type:
Article
Excess leakage currents in high-voltage 4 H-SiC Schottky diodes.
Published in:
Semiconductors, 2010, v. 44, n. 5, p. 653, doi. 10.1134/S1063782610050180
By:
- Ivanov, P. A.;
- Grekhov, I. V.;
- Potapov, A. S.;
- Samsonova, T. P.;
- Il'inskaya, N. D.;
- Kon'kov, O. I.;
- Serebrennikova, O. Yu.
Publication type:
Article
Experimental 4 H-SiC junction-barrier Schottky (JBS) diodes.
Published in:
Semiconductors, 2009, v. 43, n. 9, p. 1209, doi. 10.1134/S106378260909019X
By:
- Ivanov, P. A.;
- Grekhov, I. V.;
- Potapov, A. S.;
- Il'inskaya, N. D.;
- Samsonova, T. P.;
- Kon'kov, O. I.
Publication type:
Article
Photosensitive Structures Based on Single-Crystal Silicon and Phthalocyanine CuPc: Fabrication and Properties.
Published in:
Semiconductors, 2004, v. 38, n. 9, p. 1018, doi. 10.1134/1.1797478
By:
- Il'chuk, G. A.;
- Klimova, N. V.;
- Kon'kov, O. I.;
- Nikitin, S. E.;
- Nikolaev, Yu. A.;
- Rudaya, L. I.;
- Rud, V. Yu.;
- Rud, Yu. V.;
- Terukov, E. I.;
- Shamanin, V. V.;
- Yurre, T. A.
Publication type:
Article
The Formation of β-FeSi[sub 2] Precipitates in Microcrystalline Si.
Published in:
Semiconductors, 2002, v. 36, n. 11, p. 1235, doi. 10.1134/1.1521222
By:
- Terukov, E. I.;
- Kon’kov, O. I.;
- Kudoyarova, V. Kh.;
- Gusev, O. B.;
- Davydov, V. Yu.;
- Mosina, G. N.
Publication type:
Article
Erbium Electroluminescence in p–i–n Amorphous Hydrogenated Silicon Structures.
Published in:
Semiconductors, 2002, v. 36, n. 11, p. 1240, doi. 10.1134/1.1521223
By:
- Terukov, E. I.;
- Gusev, O. B.;
- Kon’kov, O. I.;
- Undalov, Yu. K.;
- Stutzmann, M.;
- Janotta, A.;
- Mell, H.;
- Kleider, J. P.
Publication type:
Article
Conductivity and Structure of Er-Doped Amorphous Hydrogenated Silicon Films.
Published in:
Semiconductors, 2002, v. 36, n. 11, p. 1248, doi. 10.1134/1.1521225
By:
- Kon’kov, O. I.;
- Terukov, E. I.;
- Granitsina, L. S.
Publication type:
Article
Effect of Doping with Nitrogen on Electrical Properties and Erbium Electroluminescence of a-Si:H(Er) Films.
Published in:
Semiconductors, 2001, v. 35, n. 10, p. 1197, doi. 10.1134/1.1410664
By:
- Kon’kov, O. I.;
- Terukov, E. I.;
- Granitsyna, L. S.
Publication type:
Article
Effect of Erbium on Electronic Traps in PECVD-grown a-Si:H(Er)/c-Si Structures.
Published in:
Semiconductors, 2001, v. 35, n. 6, p. 621, doi. 10.1134/1.1379390
By:
- Lysenko, V. S.;
- Tyagulskiı, I. P.;
- Osiyuk, I. N.;
- Nazarov, A. N.;
- Vovk, Ya. N.;
- Gomenyuk, Yu. V.;
- Terukov, E. I.;
- Kon’kov, O. I.
Publication type:
Article
The Meissner Effect in Copper-Containing Fullerides.
Published in:
Semiconductors, 2001, v. 35, n. 6, p. 659
By:
- Prikhod’ko, A. V.;
- Kon’kov, O. I.
Publication type:
Article
The Influence of Erbium on Electrical and Photoelectric Properties of Amorphous Silicon Produced by Radio-Frequency Silane Decomposition.
Published in:
Semiconductors, 2000, v. 34, n. 7, p. 829, doi. 10.1134/1.1188083
By:
- Terukov, E. I.;
- Kazanin, M. M.;
- Kon’kov, O. I.;
- Kudoyarova, V. Kh.;
- Kougiya, K. V.;
- Nikulin, Yu. A.;
- Kazanskiı, A. G.
Publication type:
Article
Current–Voltage Characteristics of Electroluminescent Me/(a-Si:H):Er/c-Si Structures Prepared by Magnetron Sputtering.
Published in:
Semiconductors, 2000, v. 34, n. 5, p. 598, doi. 10.1134/1.1188035
By:
- Ivanov, P. A.;
- Kon’kov, O. I.;
- Terukov, E. I.
Publication type:
Article
Structure and Properties of a-Si:H Films Grown by Cyclic Deposition.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 477
By:
- Afanas’ev, V. P.;
- Gudovskikh, A. S.;
- Kon’kov, O. I.;
- Kazanin, M. M.;
- Kougiya, K. V.;
- Sazanov, A. P.;
- Trapeznikova, I. N.;
- Terukov, E. I.
Publication type:
Article
The Influence of Local Surroundings of Er Atoms on the Kinetics of Decay of Er Photoluminescence in Amorphous Hydrogenated Silicon.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 92, doi. 10.1134/1.1187952
By:
- Terukov, E. I.;
- Kudoyarova, V. Kh.;
- Kon’kov, O. I.;
- Konstantinova, E. A.;
- Kamenev, B. V.;
- Timoshenko, V. Yu.
Publication type:
Article
Influence of the substrate temperature and annealing on the 1.54-μm erbium photoluminescence of a-Si:H films obtained using a glow discharge.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 177, doi. 10.1134/1.1187888
By:
- Terukov, E. I.;
- Kon’kov, O. I.;
- Kudoyarova, V. Kh.;
- Gusev, O. B.;
- Weiser, G.;
- Kuehne, H.
Publication type:
Article
Luminescence of erbium in amorphous hydrogenated silicon obtained by the glow-discharge method.
Published in:
Semiconductors, 1998, v. 32, n. 8, p. 884, doi. 10.1134/1.1187477
By:
- Terukov, E. I.;
- Kon’kov, O. I.;
- Kudoyarova, V. Kh.;
- Gusev, O. B.;
- Weiser, G.
Publication type:
Article
Influence of plasma treatment of the surface of silicon carbide on the characteristics of buried-gate junction field-effect transistors.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1212, doi. 10.1134/1.1187295
By:
- Ivanov, P. A.;
- Kon’kov, O. I.;
- Panteleev, V. N.;
- Samsonova, T. P.
Publication type:
Article
4<italic>H</italic>-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers.
Published in:
Technical Physics Letters, 2018, v. 44, n. 2, p. 87, doi. 10.1134/S1063785018020086
By:
- Ivanov, P. A.;
- Kon'kov, O. I.;
- Samsonova, T. P.;
- Potapov, A. S.
Publication type:
Article
Erbium Electroluminescence in an Al/a-Si:H(Er)/p-c-Si/Al Heterostructure.
Published in:
Technical Physics Letters, 2001, v. 27, n. 7, p. 542, doi. 10.1134/1.1388936
By:
- Kon’kov, I. O.;
- Kuznetsov, A. N.;
- Pak, P. E.;
- Terukov, E. I.;
- Granitsyna, L. S.
Publication type:
Article
The Ablation Threshold in Amorphous Diamondlike Carbon Films Exposed to an ArF Excimer Laser Radiation.
Published in:
Technical Physics Letters, 2000, v. 26, n. 12, p. 1032, doi. 10.1134/1.1337244
By:
- Kaliteevskaya, N. A.;
- Kon’kov, O. I.;
- Terukov, E. I.;
- Seısyan, R. P.
Publication type:
Article
Microwave Experiment on a Costas-Array Ref lecting Screen.
Published in:
Technical Physics Letters, 2000, v. 26, n. 3, p. 236, doi. 10.1134/1.1262803
By:
- Kon’kov, O. I.;
- Prikhod’ko, A. V.
Publication type:
Article