Works by Koide, Yasuo

Results: 44

An Interface Engineered Multicolor Photodetector Based on n-Si(111)/TiO2 Nanorod Array Heterojunction.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 9, p. 1400, doi. 10.1002/adfm.201504464

By:

Ji, Tao;
Liu, Qian;
Zou, Rujia;
Sun, Yangang;
Xu, Kaibing;
Sang, Liwen;
Liao, Meiyong;
Koide, Yasuo;
Yu, Li;
Hu, Junqing

Publication type:

Article

Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection.

Published in:

Advanced Functional Materials, 2010, v. 20, n. 22, p. 3972, doi. 10.1002/adfm.201001140

By:

Li, Yanbo;
Tokizono, Takero;
Liao, Meiyong;
Zhong, Miao;
Koide, Yasuo;
Yamada, Ichiro;
Delaunay, Jean-Jacques

Publication type:

Article

Ultraviolet Sensors: An Efficient Way to Assemble ZnS Nanobelts as Ultraviolet-Light Sensors with Enhanced Photocurrent and Stability (Adv. Funct. Mater. 3/2010).

Published in:

Advanced Functional Materials, 2010, v. 20, n. 3, p. n/a, doi. 10.1002/adfm.201090004

By:

Fang, Xiaosheng;
Bando, Yoshio;
Liao, Meiyong;
Zhai, Tianyou;
Gautam, Ujjal K.;
Li, Liang;
Koide, Yasuo;
Golberg, Dmitri

Publication type:

Article

An Efficient Way to Assemble ZnS Nanobelts as Ultraviolet-Light Sensors with Enhanced Photocurrent and Stability.

Published in:

Advanced Functional Materials, 2010, v. 20, n. 3, p. 500, doi. 10.1002/adfm.200901878

By:

Fang, Xiaosheng;
Bando, Yoshio;
Liao, Meiyong;
Zhai, Tianyou;
Gautam, Ujjal K.;
Li, Liang;
Koide, Yasuo;
Golberg, Dmitri

Publication type:

Article

Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep06395

By:

Jiangwei Liu;
Meiyong Liao;
Masataka Imura;
Akihiro Tanaka;
Hideo Iwai;
Yasuo Koide

Publication type:

Article

Arbitrary Multicolor Photodetection by Hetero-integrated Semiconductor Nanostructures.

Published in:

Scientific Reports, 2013, p. 1, doi. 10.1038/srep02368

By:

Liwen Sang;
Junqing Hu;
Rujia Zou;
Yasuo Koide;
Meiyong Liao

Publication type:

Article

Suspended Single-Crystal Diamond Nanowires for High-Performance Nanoelectromechanical Switches.

Published in:

Advanced Materials, 2010, v. 22, n. 47, p. 5393, doi. 10.1002/adma.201003074

By:

Liao, Meiyong;
Hishita, Shunichi;
Watanabe, Eiichiro;
Koizumi, Satoshi;
Koide, Yasuo

Publication type:

Article

Ultrahigh-Performance Solar-Blind Photodetectors Based on Individual Single-crystalline In2Ge2O7 Nanobelts.

Published in:

Advanced Materials, 2010, v. 22, n. 45, p. 5145, doi. 10.1002/adma.201002608

By:

Li, Liang;
Lee, Pooi See;
Yan, Chaoyi;
Zhai, Tianyou;
Fang, Xiaosheng;
Liao, Meiyong;
Koide, Yasuo;
Bando, Yoshio;
Golberg, Dmitri

Publication type:

Article

Single-Crystalline Sb2Se3 Nanowires for High-Performance Field Emitters and Photodetectors.

Published in:

Advanced Materials, 2010, v. 22, n. 40, p. 4530, doi. 10.1002/adma.201002097

By:

Zhai, Tianyou;
Ye, Mingfu;
Li, Liang;
Fang, Xiaosheng;
Liao, Meiyong;
Li, Yongfang;
Koide, Yasuo;
Bando, Yoshio;
Golberg, Dmitri

Publication type:

Article

Electrical Transport and High-Performance Photoconductivity in Individual ZrS2 Nanobelts.

Published in:

Advanced Materials, 2010, v. 22, n. 37, p. 4151, doi. 10.1002/adma.201001413

By:

Li, Liang;
Fang, Xiaosheng;
Zhai, Tianyou;
Liao, Meiyong;
Gautam, Ujjal K;
Wu, Xingcai;
Koide, Yasuo;
Bando, Yoshio;
Golberg, Dmitri

Publication type:

Article

Single-Crystalline CdS Nanobelts for Excellent Field-Emitters and Ultrahigh Quantum-Efficiency Photodetectors.

Published in:

Advanced Materials, 2010, v. 22, n. 29, p. 3161, doi. 10.1002/adma.201000144

By:

Li, Liang;
Wu, Peicai;
Fang, Xiaosheng;
Zhai, Tianyou;
Dai, Lun;
Liao, Meiyong;
Koide, Yasuo;
Wang, Hongqiang;
Bando, Yoshio;
Golberg, Dmitri

Publication type:

Article

Centimeter-Long V2O5 Nanowires: From Synthesis to Field-Emission, Electrochemical, Electrical Transport, and Photoconductive Properties.

Published in:

Advanced Materials, 2010, v. 22, n. 23, p. 2547, doi. 10.1002/adma.200903586

By:

Zhai, Tianyou;
Liu, Haimei;
Li, Huiqiao;
Fang, Xiaosheng;
Liao, Meiyong;
Li, Liang;
Zhou, Haoshen;
Koide, Yasuo;
Bando, Yoshio;
Golberg, Dmitri

Publication type:

Article

High-Performance Blue/Ultraviolet-Light-Sensitive ZnSe-Nanobelt Photodetectors.

Published in:

Advanced Materials, 2009, v. 21, n. 48, p. 5016, doi. 10.1002/adma.200902126

By:

Fang, Xiaosheng;
Xiong, Shenglin;
Zhai, Tianyou;
Bando, Yoshio;
Liao, Meiyong;
Gautam, Ujjal K.;
Koide, Yasuo;
Zhang, Xiaogang;
Qian, Yitai;
Golberg, Dmitri

Publication type:

Article

UV Photodetectors: Single-Crystalline ZnS Nanobelts as Ultraviolet-Light Sensors (Adv. Mater. 20/2009).

Published in:

Advanced Materials, 2009, v. 21, n. 20, p. n/a, doi. 10.1002/adma.200990072

By:

Fang, Xiaosheng;
Bando, Yoshio;
Liao, Meiyong;
Gautam, Ujjal K.;
Zhi, Chunyi;
Dierre, Benjamin;
Liu, Baodan;
Zhai, Tianyou;
Sekiguchi, Takashi;
Koide, Yasuo;
Golberg, Dmitri

Publication type:

Article

Single-Crystalline ZnS Nanobelts as Ultraviolet-Light Sensors.

Published in:

Advanced Materials, 2009, v. 21, n. 20, p. 2034, doi. 10.1002/adma.200802441

By:

Fang, Xiaosheng;
Bando, Yoshio;
Liao, Meiyong;
Gautam, Ujjal K.;
Zhi, Chunyi;
Dierre, Benjamin;
Liu, Baodan;
Zhai, Tianyou;
Sekiguchi, Takashi;
Koide, Yasuo;
Golberg, Dmitri

Publication type:

Article

Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing Temperature up to 900 °C.

Published in:

Coatings (2079-6412), 2021, v. 11, n. 4, p. 470, doi. 10.3390/coatings11040470

By:

Yuan, Xiaolu;
Liu, Jiangwei;
Liu, Jinlong;
Wei, Junjun;
Da, Bo;
Li, Chengming;
Koide, Yasuo

Publication type:

Article

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates.

Published in:

Nanoscale Research Letters, 2018, v. 13, n. 1, p. 1, doi. 10.1186/s11671-018-2804-y

By:

Kumar, Ashutosh;
Mitsuishi, Kazutaka;
Hara, Toru;
Kimoto, Koji;
Irokawa, Yoshihiro;
Nabatame, Toshihide;
Takashima, Shinya;
Ueno, Katsunori;
Edo, Masaharu;
Koide, Yasuo

Publication type:

Article

Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 24, p. N.PAG, doi. 10.1002/pssa.201900538

By:

Yang, Mingchao;
Sang, Liwen;
Liao, Meiyong;
Imura, Masataka;
Li, Hongdong;
Koide, Yasuo

Publication type:

Article

Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal‐Organic Vapor Phase Epitaxy.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 21, p. N.PAG, doi. 10.1002/pssa.201800282

By:

Imura, Masataka;
Ota, Yuichi;
Banal, Ryan G.;
Liao, Meiyong;
Nakayama, Yoshiko;
Takeguchi, Masaki;
Koide, Yasuo

Publication type:

Article

Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen-Terminated Diamond Field Effect Transistor with AlN/Al2O3 Stack Gate.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 11, p. n/a, doi. 10.1002/pssa.201700463

By:

Banal, Ryan G.;
Imura, Masataka;
Ohata, Hirohito;
Liao, Meiyong;
Liu, Jiangwei;
Koide, Yasuo

Publication type:

Article

Nanometer-thin ALD-Al2O3 for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 2, p. n/a, doi. 10.1002/pssa.201600727

By:

Banal, Ryan G.;
Imura, Masataka;
Tsuya, Daiju;
Iwai, Hideo;
Koide, Yasuo

Publication type:

Article

Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formation.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 11, p. 2365, doi. 10.1002/pssa.201532449

By:

Teraji, Tokuyuki;
Yamamoto, Takashi;
Watanabe, Kenji;
Koide, Yasuo;
Isoya, Junichi;
Onoda, Shinobu;
Ohshima, Takeshi;
Rogers, Lachlan J.;
Jelezko, Fedor;
Neumann, Philipp;
Wrachtrup, Jörg;
Koizumi, Satoshi

Publication type:

Article

Thermal stabilization and deterioration of the WC/p-type diamond (100) Schottky-barrier interface.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 10, p. 2363, doi. 10.1002/pssa.201431216

By:

Fiori, Alexandre;
Teraji, Tokuyuki;
Koide, Yasuo

Publication type:

Article

Integrated TbDyFe Film on a Single‐Crystal Diamond Microelectromechanical Resonator for Magnetic Sensing.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 9, p. 1, doi. 10.1002/pssr.202100352

By:

Shen, Xiulin;
Sun, Huanying;
Sang, Liwen;
Imura, Masataka;
Koide, Yasuo;
Koizumi, Satoshi;
Liao, Meiyong

Publication type:

Article

Demonstration of diamond field effect transistors by AlN/diamond heterostructure.

Published in:

Physica Status Solidi - Rapid Research Letters, 2011, v. 5, n. 3, p. 125, doi. 10.1002/pssr.201105024

By:

Imura, Masataka;
Hayakawa, Ryoma;
Watanabe, Eiichiro;
Liao, Meiyong;
Koide, Yasuo;
Amano, Hiroshi

Publication type:

Article

High-temperature stability of Au/p-type diamond Schottky diode.

Published in:

Physica Status Solidi - Rapid Research Letters, 2009, v. 3, n. 6, p. 211, doi. 10.1002/pssr.200903151

By:

Teraji, Tokuyuki;
Koide, Yasuo;
Ito, Toshimichi

Publication type:

Article

Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 356, doi. 10.1002/pssb.200303279

By:

Yasuo Koide;
D. E. Walker;
B. D. White;
L. J. Brillson;
T. Itoh;
R. L. McCreery;
Masanori Murakami;
S. Kamiyama;
H. Amano;
I. Akasaki

Publication type:

Article

Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates.

Published in:

Applied Sciences (2076-3417), 2019, v. 9, n. 14, p. 2895, doi. 10.3390/app9142895

By:

Ren, Bing;
Liao, Meiyong;
Sumiya, Masatomo;
Huang, Jian;
Wang, Linjun;
Koide, Yasuo;
Sang, Liwen

Publication type:

Article

The electric double layer effect and its strong suppression at Li+ solid electrolyte/hydrogenated diamond interfaces.

Published in:

Communications Chemistry, 2021, v. 4, n. 1, p. 1, doi. 10.1038/s42004-021-00554-7

By:

Tsuchiya, Takashi;
Takayanagi, Makoto;
Mitsuishi, Kazutaka;
Imura, Masataka;
Ueda, Shigenori;
Koide, Yasuo;
Higuchi, Tohru;
Terabe, Kazuya

Publication type:

Article

Coupling of magneto-strictive FeGa film with single-crystal diamond MEMS resonator for high-reliability magnetic sensing at high temperatures.

Published in:

2020

By:

Zhang, Zilong;
Wu, Yuanzhao;
Sang, Liwen;
Wu, Haihua;
Huang, Jian;
Wang, Linjun;
Takahashi, Yukiko;
Li, Runwei;
Koizumi, Satoshi;
Toda, Masaya;
Akita, Indianto Mohammad;
Koide, Yasuo;
Liao, Meiyong

Publication type:

Report

Highly Reliable Diamond MEMS Dual Sensor for Magnetic Fields and Temperatures with Self‐Recognition Algorithms.

Published in:

Advanced Materials Technologies, 2024, v. 9, n. 13, p. 1, doi. 10.1002/admt.202400153

By:

Zhang, Zilong;
Gu, Keyun;
Chen, Guo;
Sang, Liwen;
Teraji, Tokuyuki;
Koide, Yasuo;
Koizumi, Satoshi;
Toda, Masaya;
Liao, Meiyong

Publication type:

Article

Ultrahigh Performance On‐Chip Single Crystal Diamond NEMS/MEMS with Electrically Tailored Self‐Sensing Enhancing Actuation.

Published in:

Advanced Materials Technologies, 2019, v. 4, n. 2, p. N.PAG, doi. 10.1002/admt.201800325

By:

Liao, Meiyong;
Sang, Liwen;
Teraji, Tokuyuki;
Koizumi, Satoshi;
Koide, Yasuo

Publication type:

Article

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800832

By:

Liao, Meiyong;
Sang, Liwen;
Shimaoka, Takehiro;
Imura, Masataka;
Koizumi, Satoshi;
Koide, Yasuo

Publication type:

Article

An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors.

Published in:

Sensors (14248220), 2018, v. 18, n. 6, p. 1813, doi. 10.3390/s18061813

By:

Liu, Jiangwei;
Koide, Yasuo

Publication type:

Article

Synergistic Effect of Surface States and Deep Defects for Ultrahigh Gain Deep‐Ultraviolet Photodetector with Low‐Voltage Operation.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 14, p. 1, doi. 10.1002/adfm.202420238

By:

Gu, Keyun;
Wu, Kongping;
Zhang, Zilong;
Ohsawa, Takeo;
Huang, Jian;
Koide, Yasuo;
Toda, Masaya;
Liao, Meiyong

Publication type:

Article

On‐chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film.

Published in:

Advanced Functional Materials, 2023, v. 33, n. 27, p. 1, doi. 10.1002/adfm.202300805

By:

Zhang, Zilong;
Zhao, Wen;
Chen, Guo;
Toda, Masaya;
Koizumi, Satoshi;
Koide, Yasuo;
Liao, Meiyong

Publication type:

Article

Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlO x /TiO y Nanolaminates.

Published in:

Nanomaterials (2079-4991), 2023, v. 13, n. 7, p. 1256, doi. 10.3390/nano13071256

By:

Liu, Jiangwei;
Okamura, Masayuki;
Mashiko, Hisanori;
Imura, Masataka;
Liao, Meiyong;
Kikuchi, Ryosuke;
Suzuka, Michio;
Koide, Yasuo

Publication type:

Article

Flexible Ultraviolet Photodetectors with Broad Photoresponse Based on Branched ZnS-ZnO Heterostructure Nanofilms.

Published in:

Advanced Materials, 2014, v. 26, n. 19, p. 3088, doi. 10.1002/adma.201305457

By:

Tian, Wei;
Zhang, Chao;
Zhai, Tianyou;
Li, Song-Lin;
Wang, Xi;
Liu, Jiangwei;
Jie, Xiao;
Liu, Dequan;
Liao, Meiyong;
Koide, Yasuo;
Golberg, Dmitri;
Bando, Yoshio

Publication type:

Article

Photodetectors: Flexible Ultraviolet Photodetectors with Broad Photoresponse Based on Branched ZnS-ZnO Heterostructure Nanofilms (Adv. Mater. 19/2014).

Published in:

Advanced Materials, 2014, v. 26, n. 19, p. 3087, doi. 10.1002/adma.201470127

By:

Tian, Wei;
Zhang, Chao;
Zhai, Tianyou;
Li, Song-Lin;
Wang, Xi;
Liu, Jiangwei;
Jie, Xiao;
Liu, Dequan;
Liao, Meiyong;
Koide, Yasuo;
Golberg, Dmitri;
Bando, Yoshio

Publication type:

Article

A Multilevel Intermediate-Band Solar Cell by InGaN/GaN Quantum Dots with a Strain-Modulated Structure.

Published in:

Advanced Materials, 2014, v. 26, n. 9, p. 1414, doi. 10.1002/adma.201304335

By:

Sang, Liwen;
Liao, Meiyong;
Liang, Qifeng;
Takeguchi, Masaki;
Dierre, Benjamin;
Shen, Bo;
Sekiguchi, Takashi;
Koide, Yasuo;
Sumiya, Masatomo

Publication type:

Article

Design and fabrication of high-performance diamond triple-gate field-effect transistors.

Published in:

Scientific Reports, 2016, p. 34757, doi. 10.1038/srep34757

By:

Liu, Jiangwei;
Ohsato, Hirotaka;
Wang, Xi;
Liao, Meiyong;
Koide, Yasuo

Publication type:

Article

P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas.

Published in:

Scientific Reports, 2016, p. 23683, doi. 10.1038/srep23683

By:

Zhang, Kexiong;
Sumiya, Masatomo;
Liao, Meiyong;
Koide, Yasuo;
Sang, Liwen

Publication type:

Article

Carbon-Based Materials: Growth, Properties, MEMS/NEMS Technologies, and MEM/NEM Switches.

Published in:

Critical Reviews in Solid State & Materials Science, 2011, v. 36, n. 2, p. 66, doi. 10.1080/10408436.2011.572748

By:

Liao, Meiyong;
Koide, Yasuo

Publication type:

Article

Ohmic Contacts for Compound Semiconductors.

Published in:

Critical Reviews in Solid State & Materials Science, 1998, v. 23, n. 1, p. 1, doi. 10.1080/10408439891324167

By:

Murakami, Masanori;
Koide, Yasuo

Publication type:

Article