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Efficient Assembly of Bridged β-Ga<sub>2</sub>O<sub>3</sub> Nanowires for Solar-Blind Photodetection.
- Published in:
- Advanced Functional Materials, 2010, v. 20, n. 22, p. 3972, doi. 10.1002/adfm.201001140
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- Article
Ultraviolet Sensors: An Efficient Way to Assemble ZnS Nanobelts as Ultraviolet-Light Sensors with Enhanced Photocurrent and Stability (Adv. Funct. Mater. 3/2010).
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- Advanced Functional Materials, 2010, v. 20, n. 3, p. n/a, doi. 10.1002/adfm.201090004
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- Article
An Efficient Way to Assemble ZnS Nanobelts as Ultraviolet-Light Sensors with Enhanced Photocurrent and Stability.
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- Advanced Functional Materials, 2010, v. 20, n. 3, p. 500, doi. 10.1002/adfm.200901878
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- Article
An Interface Engineered Multicolor Photodetector Based on n-Si(111)/TiO<sub>2</sub> Nanorod Array Heterojunction.
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- Advanced Functional Materials, 2016, v. 26, n. 9, p. 1400, doi. 10.1002/adfm.201504464
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- Article
Highly Reliable Diamond MEMS Dual Sensor for Magnetic Fields and Temperatures with Self‐Recognition Algorithms.
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- Advanced Materials Technologies, 2024, v. 9, n. 13, p. 1, doi. 10.1002/admt.202400153
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- Article
Ultrahigh Performance On‐Chip Single Crystal Diamond NEMS/MEMS with Electrically Tailored Self‐Sensing Enhancing Actuation.
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- Advanced Materials Technologies, 2019, v. 4, n. 2, p. N.PAG, doi. 10.1002/admt.201800325
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- Article
Design and fabrication of high-performance diamond triple-gate field-effect transistors.
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- Scientific Reports, 2016, p. 34757, doi. 10.1038/srep34757
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- Article
P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas.
- Published in:
- Scientific Reports, 2016, p. 23683, doi. 10.1038/srep23683
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- Article
On‐chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film.
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- Advanced Functional Materials, 2023, v. 33, n. 27, p. 1, doi. 10.1002/adfm.202300805
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- Article
The electric double layer effect and its strong suppression at Li<sup>+</sup> solid electrolyte/hydrogenated diamond interfaces.
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- Communications Chemistry, 2021, v. 4, n. 1, p. 1, doi. 10.1038/s42004-021-00554-7
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- Article
Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing Temperature up to 900 °C.
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- Coatings (2079-6412), 2021, v. 11, n. 4, p. 470, doi. 10.3390/coatings11040470
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- Article
Suspended Single-Crystal Diamond Nanowires for High-Performance Nanoelectromechanical Switches.
- Published in:
- Advanced Materials, 2010, v. 22, n. 47, p. 5393, doi. 10.1002/adma.201003074
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- Publication type:
- Article
Ultrahigh-Performance Solar-Blind Photodetectors Based on Individual Single-crystalline In<sub>2</sub>Ge<sub>2</sub>O<sub>7</sub> Nanobelts.
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- Advanced Materials, 2010, v. 22, n. 45, p. 5145, doi. 10.1002/adma.201002608
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- Article
Single-Crystalline Sb<sub>2</sub>Se<sub>3</sub> Nanowires for High-Performance Field Emitters and Photodetectors.
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- Advanced Materials, 2010, v. 22, n. 40, p. 4530, doi. 10.1002/adma.201002097
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- Article
Electrical Transport and High-Performance Photoconductivity in Individual ZrS<sub>2</sub> Nanobelts.
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- Advanced Materials, 2010, v. 22, n. 37, p. 4151, doi. 10.1002/adma.201001413
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- Article
Single-Crystalline CdS Nanobelts for Excellent Field-Emitters and Ultrahigh Quantum-Efficiency Photodetectors.
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- Advanced Materials, 2010, v. 22, n. 29, p. 3161, doi. 10.1002/adma.201000144
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- Article
Centimeter-Long V<sub>2</sub>O<sub>5</sub> Nanowires: From Synthesis to Field-Emission, Electrochemical, Electrical Transport, and Photoconductive Properties.
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- Advanced Materials, 2010, v. 22, n. 23, p. 2547, doi. 10.1002/adma.200903586
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- Article
High-Performance Blue/Ultraviolet-Light-Sensitive ZnSe-Nanobelt Photodetectors.
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- Advanced Materials, 2009, v. 21, n. 48, p. 5016, doi. 10.1002/adma.200902126
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- Publication type:
- Article
UV Photodetectors: Single-Crystalline ZnS Nanobelts as Ultraviolet-Light Sensors (Adv. Mater. 20/2009).
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- Advanced Materials, 2009, v. 21, n. 20, p. n/a, doi. 10.1002/adma.200990072
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- Article
Single-Crystalline ZnS Nanobelts as Ultraviolet-Light Sensors.
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- Advanced Materials, 2009, v. 21, n. 20, p. 2034, doi. 10.1002/adma.200802441
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- Article
Integrated TbDyFe Film on a Single‐Crystal Diamond Microelectromechanical Resonator for Magnetic Sensing.
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- Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 9, p. 1, doi. 10.1002/pssr.202100352
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- Article
Demonstration of diamond field effect transistors by AlN/diamond heterostructure.
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- Physica Status Solidi - Rapid Research Letters, 2011, v. 5, n. 3, p. 125, doi. 10.1002/pssr.201105024
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- Article
High-temperature stability of Au/p-type diamond Schottky diode.
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- Physica Status Solidi - Rapid Research Letters, 2009, v. 3, n. 6, p. 211, doi. 10.1002/pssr.200903151
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- Article
An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors.
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- Sensors (14248220), 2018, v. 18, n. 6, p. 1813, doi. 10.3390/s18061813
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- Article
Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates.
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- Applied Sciences (2076-3417), 2019, v. 9, n. 14, p. 2895, doi. 10.3390/app9142895
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- Article
Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 356, doi. 10.1002/pssb.200303279
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- Article
Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas.
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- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 24, p. N.PAG, doi. 10.1002/pssa.201900538
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- Article
Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal‐Organic Vapor Phase Epitaxy.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 21, p. N.PAG, doi. 10.1002/pssa.201800282
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- Article
Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen-Terminated Diamond Field Effect Transistor with AlN/Al<sub>2</sub>O<sub>3</sub> Stack Gate.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 11, p. n/a, doi. 10.1002/pssa.201700463
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- Article
Nanometer-thin ALD-Al<sub>2</sub>O<sub>3</sub> for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 2, p. n/a, doi. 10.1002/pssa.201600727
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- Article
Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formation.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 11, p. 2365, doi. 10.1002/pssa.201532449
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- Article
Thermal stabilization and deterioration of the WC/p-type diamond (100) Schottky-barrier interface.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 10, p. 2363, doi. 10.1002/pssa.201431216
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- Article
Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates.
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- Nanoscale Research Letters, 2018, v. 13, n. 1, p. 1, doi. 10.1186/s11671-018-2804-y
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- Article
Flexible Ultraviolet Photodetectors with Broad Photoresponse Based on Branched ZnS-ZnO Heterostructure Nanofilms.
- Published in:
- Advanced Materials, 2014, v. 26, n. 19, p. 3088, doi. 10.1002/adma.201305457
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- Article
Photodetectors: Flexible Ultraviolet Photodetectors with Broad Photoresponse Based on Branched ZnS-ZnO Heterostructure Nanofilms (Adv. Mater. 19/2014).
- Published in:
- Advanced Materials, 2014, v. 26, n. 19, p. 3087, doi. 10.1002/adma.201470127
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- Article
A Multilevel Intermediate-Band Solar Cell by InGaN/GaN Quantum Dots with a Strain-Modulated Structure.
- Published in:
- Advanced Materials, 2014, v. 26, n. 9, p. 1414, doi. 10.1002/adma.201304335
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- Publication type:
- Article
Low on-resistance diamond field effect transistor with high-k ZrO<sub>2</sub> as dielectric.
- Published in:
- Scientific Reports, 2014, p. 1, doi. 10.1038/srep06395
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- Article
Arbitrary Multicolor Photodetection by Hetero-integrated Semiconductor Nanostructures.
- Published in:
- Scientific Reports, 2013, p. 1, doi. 10.1038/srep02368
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- Publication type:
- Article
Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800832
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- Publication type:
- Article
Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlO x /TiO y Nanolaminates.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 7, p. 1256, doi. 10.3390/nano13071256
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- Article