Found: 22
Select item for more details and to access through your institution.
Ion implantation of erbium into polycrystalline cadmium telluride.
- Published in:
- Semiconductors, 2015, v. 49, n. 5, p. 630, doi. 10.1134/S1063782615050267
- By:
- Publication type:
- Article
Effect of annealing in liquid cadmium upon photoluminescence in polycrystalline cadmium telluride grown under nonequilibrium conditions.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 292, doi. 10.1134/S106378261403021X
- By:
- Publication type:
- Article
Effect of features of the technology of polycrystalline CdTe growth on the conductivity and deep level spectrum after annealing.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 406, doi. 10.1134/S106378261403004X
- By:
- Publication type:
- Article
On the behavior of Bi in a CdTe lattice and the compensation effect in CdTe:Bi.
- Published in:
- Semiconductors, 2013, v. 47, n. 4, p. 561, doi. 10.1134/S1063782613040143
- By:
- Publication type:
- Article
Photoluminescence of CdTe grown in conditions considerably deviating from thermodynamic equilibrium.
- Published in:
- Semiconductors, 2011, v. 45, n. 7, p. 880, doi. 10.1134/S1063782611070025
- By:
- Publication type:
- Article
Modification of the spectrum of electronic states in polycrystalline p-CdTe as a result of annealing in Cd vapors or natural aging.
- Published in:
- Semiconductors, 2009, v. 43, n. 11, p. 1484, doi. 10.1134/S1063782609110141
- By:
- Publication type:
- Article
Electrical properties, photoconductivity, and photoluminescence of coarse-grained p-ZnTe.
- Published in:
- Semiconductors, 2008, v. 42, n. 11, p. 1264, doi. 10.1134/S1063782608110031
- By:
- Publication type:
- Article
Y and Z luminescence of polycrystalline cadmium telluride grown by a nonequilibrium reaction of the direct synthesis of components.
- Published in:
- Semiconductors, 2008, v. 42, n. 5, p. 522, doi. 10.1134/S1063782608050060
- By:
- Publication type:
- Article
Electrical properties of undoped high-resistivity n-CdTe polycrystals.
- Published in:
- Semiconductors, 2007, v. 41, n. 6, p. 651, doi. 10.1134/S1063782607060061
- By:
- Publication type:
- Article
Microphotoluminescence of undoped cadmium telluride grown by nonequilibrium direct synthesis from the flow of components’ vapors.
- Published in:
- Semiconductors, 2007, v. 41, n. 2, p. 136, doi. 10.1134/S1063782607020030
- By:
- Publication type:
- Article
Charge-carrier transport in annealed coarse-and fine-grained CdTe polycrystals.
- Published in:
- Semiconductors, 2006, v. 40, n. 9, p. 1002, doi. 10.1134/S1063782606090028
- By:
- Publication type:
- Article
Effect of passivation of the p-CdTe surface in (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub> on the current-voltage characteristics of contacts.
- Published in:
- Semiconductors, 2006, v. 40, n. 9, p. 1048, doi. 10.1134/S1063782606090107
- By:
- Publication type:
- Article
Morphology, twinning, and photoluminescence of ZnTe crystals grown by chemical synthesis from vapor-phase components.
- Published in:
- Semiconductors, 2006, v. 40, n. 2, p. 148, doi. 10.1134/S1063782606020060
- By:
- Publication type:
- Article
Microphotoluminescence of Undoped Single-Crystal Zinc Telluride Produced by Nonequilibrium Vapor-Phase Growth Techniques.
- Published in:
- Semiconductors, 2005, v. 39, n. 9, p. 993, doi. 10.1134/1.2042585
- By:
- Publication type:
- Article
Electrical Properties of Fine-Grained Polycrystalline CdTe.
- Published in:
- Semiconductors, 2004, v. 38, n. 4, p. 455, doi. 10.1134/1.1734674
- By:
- Publication type:
- Article
Transport Phenomena in Coarse-Grain CdTe Polycrystals.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 293, doi. 10.1134/1.1682330
- By:
- Publication type:
- Article
Effect of Grain Boundaries on the Properties of Cadmium Telluride Grown under Nonequilibrium Conditions.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1259, doi. 10.1134/1.1626204
- By:
- Publication type:
- Article
Effect of Annealing in Zn Vapor and Liquid Zn on Photoluminescence of High-Purity Polycrystalline ZnTe.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 283, doi. 10.1134/1.1561519
- By:
- Publication type:
- Article
Special Features of Structural Defects in Undoped CdTe Textured Ingots Produced by Free Growth from a Gasdynamic Vapor Flow.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 119, doi. 10.1134/1.1548649
- By:
- Publication type:
- Article
A DLTS Study of Deep Levels in the Band Gap of Textured Stoichiometric p-CdTe Polycrystals.
- Published in:
- Semiconductors, 2002, v. 36, n. 12, p. 1341, doi. 10.1134/1.1529243
- By:
- Publication type:
- Article
Electrical and Photoelectric Properties of Polycrystalline Textured CdTe.
- Published in:
- Semiconductors, 2001, v. 35, n. 10, p. 1139, doi. 10.1134/1.1410652
- By:
- Publication type:
- Article
Evolution of Photoluminescence Spectra of Stoichiometric CdTe: Dependence on the Purity of Starting Components.
- Published in:
- Semiconductors, 2000, v. 34, n. 1, p. 17, doi. 10.1134/1.1187955
- By:
- Publication type:
- Article