Works by Kladko, V. P.

Results: 36

ZnO/SiC/Porous-Si/Si Heterostructure: Obtaining and Properties.
Published in:
Nanosistemi, Nanomateriali, Nanotehnologii, 2022, v. 20, n. 3, p. 647, doi. 10.15407/nnn.20.03.647
By:
- Kidalov, V. V.;
- Kladko, V. P.;
- Dyadenchuk, A. F.;
- Gudymenko, O. I.;
- Baturin, V. A.;
- Karpenko, A. Yu.
Publication type:
Article
Nanosized Structure Formation by Trampoline Ion-Plasma Sputtering.
Published in:
Nanosistemi, Nanomateriali, Nanotehnologii, 2020, v. 18, n. 2, p. 357, doi. 10.15407/nnn.18.02.357
By:
- Gabovich, A. M.;
- Gudymenko, O. Yo.;
- Kladko, V. P.;
- Lytvyn, P. M.;
- Nasieka, Iu. M.;
- Romaniuk, B. M.;
- Semeniuk, V. F.;
- Semeniuk, N. I.;
- Strelchuk, V. V.;
- Styopkin, V. I.;
- Tkach, V. M.
Publication type:
Article
Synthesis, Luminescent and Structural Properties of the Cd1 - xCuxS and Cd1 - xZnxS Nanocrystals.
Published in:
Journal of Nano- & Electronic Physics, 2017, v. 9, n. 5, p. 1, doi. 10.21272/jnep.9(5).05024
By:
- Korbutyak, D. V.;
- Kladko, V. P.;
- Safryuk, N. V.;
- Gudymenko, O. Y.;
- Budzulyak, S. I.;
- Ermakov, V. M.;
- Lotsko, O. P.;
- Tokarev, V. S.;
- Ilchuk, H. A.;
- Shevchuk, O. M.;
- Petrus, R. Y.;
- Bukartyk, N. M.;
- Tokarev, S. V.;
- Dolynska, L. V.
Publication type:
Article
ELECTRONIC AND STRUCTURAL PROPERTIES OF Si–Gd–O ELECTRON EMITTER.
Published in:
Surface Review & Letters, 2020, v. 27, n. 1, p. N.PAG, doi. 10.1142/S0218625X19500896
By:
- FEDORCHENKO, M. I.;
- MELNIK, P. V.;
- NAKHODKIN, M. G.;
- GUDYMENKO, O. I.;
- KLADKO, V. P.;
- LYTVYN, P. M.
Publication type:
Article
Simulation of X-Ray Diffraction Spectra for AlN/GaN Multiple Quantum Well Structures on AlN(0001) with Interface Roughness and Variation of Vertical Layers Thickness.
Published in:
Metallophysics & Advanced Technologies / Metallofizika i Novejsie Tehnologii, 2018, v. 40, n. 6, p. 759, doi. 10.15407/mfint.40.06.0759
By:
- Liubchenko, O. I.;
- Kladko, V. P.
Publication type:
Article
Microstructural Aspects of Nucleation and Growth of (In,Ga)As-GaAs(001) Islands with Low Indium Content.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 12, p. 1555, doi. 10.1007/s11664-007-0258-6
By:
- Kladko, V. P.;
- Strelchuk, V. V.;
- Kolomys, A. F.;
- Slobodian, M. V.;
- Mazur, Yu. I.;
- Wang, Zh. M.;
- Kunets, Vas. P.;
- Salamo, G. J.
Publication type:
Article
Manganese Clusterization in ZnS:Mn, Mg Synthesized by Self-Propagating High-Temperature Synthesis.
Published in:
Semiconductors, 2020, v. 54, n. 3, p. 330, doi. 10.1134/S1063782620030033
By:
- Bacherikov, Yu. Yu.;
- Vorona, I. P.;
- Okhrimenko, O. B.;
- Kladko, V. P.;
- Zhuk, A. G.;
- Okulov, S. M.;
- Polishchuk, Yu. O.;
- Gilchuk, A. V.;
- Romanenko, Yu. M.;
- Kidalov, V. V.
Publication type:
Article
On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering.
Published in:
Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 9, p. 6421, doi. 10.1007/s10854-022-07814-9
By:
- Vasin, A. V.;
- Rusavsky, A. V.;
- Mamykin, S. V.;
- Nikolenko, A. S.;
- Strelchuk, V. V.;
- Yatskiv, R.;
- Grym, J.;
- Gudimenko, A. I.;
- Kladko, V. P.;
- Tyagulskyy, I. P.;
- Lorinčik, J.;
- Elantyev, I.;
- Nazarov, A. N.
Publication type:
Article
MAGNETRON-SPUTTERED NANOCOMPOSITE nc-TiC/a-C COATINGS.
Published in:
Paton Welding Journal, 2013, n. 7, p. 24
By:
- BORISOV, Yu. S.;
- KUZNETSOV, M. V.;
- VOLOS, A. V.;
- ZADOYA, V. G.;
- KAPITANCHUK, L. M.;
- STRELCHUK, V. V.;
- KLADKO, V. P.;
- GORBAN, V. F.
Publication type:
Article
Integrated dynamical phase-variation diffractometry of single crystals with defects of three and more types.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 1, p. 17, doi. 10.15407/spqeo26.01.017
By:
- Molodkin, V. B.;
- Storizhko, V. Yu.;
- Kladko, V. P.;
- Lizunov, V. V.;
- Nizkova, A. I.;
- Gudimenko, A. Yo.;
- Olikhovskii, S. I.;
- Tolmachev, M. G.;
- Dmitriev, S. V.;
- Demchyk, I. I.;
- Bogdanov, E. I.;
- Hinko, B. I.
Publication type:
Article
Structure and electrical resistance of the passivating ZnSe layer on Ge.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 4, p. 425, doi. 10.15407/spqeo24.04.425
By:
- Maslov, V. P.;
- Fedorenko, A. V.;
- Kladko, V. P.;
- Gudymenko, O. Yo.;
- Bozhko, K. M.;
- Zashchepkina, N. M.
Publication type:
Article
Peculiarities of specular infrared reflection spectra of ZnO-based ceramics.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 4, p. 390, doi. 10.15407/spqeo24.04.390
By:
- Melnichuk, O. V.;
- Korsunska, N. O.;
- Markevich, I. V.;
- Boyko, V. V.;
- Polishchuk, Yu. O.;
- Tsybrii, Z. F.;
- Melnichuk, L. Yu.;
- Venger, Ye. F.;
- Kladko, V. P.;
- Khomenkova, L. Yu.
Publication type:
Article
Phase transition in vanadium oxide films formed by multistep deposition.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 4, p. 362, doi. 10.15407/spqeo24.04.362
By:
- Kladko, V. P.;
- Melnik, V. P.;
- Liubchenko, O. I.;
- Romanyuk, B. M.;
- Gudymenko, O. Yo.;
- Sabov, T. M.;
- Dubikovskyi, O. V.;
- Maksimenko, Z. V.;
- Kosulya, O. V.;
- Kulbachynskyi, O. A.;
- Lytvyn, P. M.;
- Efremov, O. O.
Publication type:
Article
New possibilities for phase-variation structural diagnostics of multiparametrical monocrystalline systems with defects.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 1, p. 5, doi. 10.15407/spqeo24.01.005
By:
- Molodkin, V. B.;
- Storizhko, V. Yu.;
- Kladko, V. P.;
- Lizunov, V. V.;
- Nizkova, A. I.;
- Gudymenko, O. Yo.;
- Olikhovskii, S. I.;
- Tolmachev, M. G.;
- Dmitriev, S. V.;
- Demchyk, I. I.;
- Bogdanov, E. I.;
- Hinko, B. I.
Publication type:
Article
Influence of microwave radiation on relaxation processes in silicon carbide.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 2, p. 175, doi. 10.15407/spqeo23.02.175
By:
- Bacherikov, Yu. Yu.;
- Goroneskul, V. Yu.;
- Gudymenko, O. Yo.;
- Kladko, V. P.;
- Kolomys, O. F.;
- Krishchenko, I. M.;
- Okhrimenko, O. B.;
- Strelchuk, V. V.
Publication type:
Article
Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 4, p. 381, doi. 10.15407/spqeo22.04.381
By:
- Borcha, M. D.;
- Solodkyi, M. S.;
- Balovsyak, S. V.;
- Tkach, V. M.;
- Hutsuliak, I. I.;
- Kuzmin, A. R.;
- Tkach, О. О.;
- Kladko, V. P.;
- Gudymenko, O. Yo.;
- Liubchenko, О. І.;
- Świątek, Z.
Publication type:
Article
Effect of electron-beam treatment of sensor glass substrates for SPR devices on their metrological characteristics.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 4, p. 444, doi. 10.15407/spqeo22.04.444
By:
- Vashchenko, V. A.;
- Yatsenko, I. V.;
- Kovalenko, Yu. I.;
- Kladko, V. P.;
- Gudymenko, O. Yo.;
- Lytvyn, P. M.;
- Korchovyi, A. A.;
- Mamykin, S. V.;
- Kondratenko, O. S.;
- Maslov, V. P.;
- Dorozinska, H. V.;
- Dorozinsky, G. V.
Publication type:
Article
The effect of ion implantation on structural damage in compositionally graded AlGaN layers.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 1, p. 119, doi. 10.15407/spqeo22.01.119
By:
- Liubchenko, O. I.;
- Kladko, V. P.;
- Stanchu, H. V.;
- Sabov, T. M.;
- Melnik, V. P.;
- Kryvyi, S. B.;
- Belyaev, A. E.
Publication type:
Article
Preparation and study of porous Si surfaces obtained using the electrochemical method.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 385, doi. 10.15407/spqeo20.04.385
By:
- Lytovchenko, V. G.;
- Gorbanyuk, T. I.;
- Kladko, V. P.;
- Sarikov, A. V.;
- Safriuk, N. V.;
- Fedorenko, L. L.;
- Ašmontas, S.;
- Gradauskas, J.;
- Širmulis, E.;
- Žalys, O.
Publication type:
Article
Modeling of X-ray rocking curves for layers after two-stage ion-implantation.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 3, p. 355, doi. 10.15407/spqeo20.03.355
By:
- Liubchenko, O. I.;
- Kladko, V. P.;
- Gudymenko, O. Yo.
Publication type:
Article
Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 153, doi. 10.15407/spqeo20.02.153
By:
- Sabov, T. M.;
- Oberemok, O. S.;
- Dubikovskyi, O. V.;
- Melnik, V. P.;
- Kladko, V. P.;
- Romanyuk, B. M.;
- Popov, V. G.;
- Gudymenko, O. Yo.;
- Safriuk, N. V.
Publication type:
Article
Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 153, doi. 10.15407/spqeo20.02.153
By:
- Sabov, T. M.;
- Oberemok, O. S.;
- Dubikovskyi, O. V.;
- Melnik, V. P.;
- Kladko, V. P.;
- Romanyuk, B. M.;
- Popov, V. G.;
- Gudymenko, O. Yo.;
- Safriuk, N. V.
Publication type:
Article
Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 391, doi. 10.15407/spqeo18.04.391
By:
- Belyaev, A. E.;
- Boltovets, N. A.;
- Bobyl, A. B.;
- Kladko, V. P.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Nasyrov, M. U.;
- Sachenko, A. V.;
- Slipokurov, V. S.;
- Slepova, A. S.;
- Safryuk, N. V.;
- Gudymenko, A. I.;
- Shynkarenko, V. V.
Publication type:
Article
Ohmic contacts based on Pd to indium phosphide Gunn diodes.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 317, doi. 10.15407/spqeo18.03.317
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Bobyl, A. V.;
- Zorenko, A. V.;
- Arsentiev, I. N.;
- Kladko, V. P.;
- Kovtonyuk, V. M.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Sachenko, A. V.;
- Slipokurov, V. S.;
- Slepova, A. S.;
- Safryuk, N. V.;
- Gudymenko, A. I.;
- Shynkarenko, V. V.
Publication type:
Article
Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 317
By:
- Kladko, V. P.;
- Safriuk, N. V.;
- Stanchu, H. V.;
- Kuchuk, A. V.;
- Melnyk, V. P.;
- Oberemok, A. S.;
- Kriviy, S. B.;
- Maksymenko, Z. V.;
- Belyaev, A. E.;
- Yavich, B. S.
Publication type:
Article
X-ray diffraction investigation of GaN layers on Si(111) and Al2O3 (0001) substrates.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 3, p. 265
By:
- Safriuk, N. V.;
- Stanchu, G. V.;
- Kuchuk, A. V.;
- Kladko, V. P.;
- Belyaev, A. E.;
- Machulin, V. F.
Publication type:
Article
Influence of small miscuts on self-ordered growth of Ge nanoislands.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 4, p. 389
By:
- Gudymenko, O. Yo.;
- Kladko, V. P.;
- Yefanov, O. M.;
- Slobodian, M. V.;
- Polischuk, Yu. S.;
- Krasilnik, Z. F.;
- Lobanov, D. V.;
- Novikov, A. A.
Publication type:
Article
Modification of properties of the glass--Si3N4-Si-SiO2 structure at laser treatment.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 3, p. 284
By:
- Konakova, R. V.;
- Kladko, V. P.;
- Lytvyn, O. S.;
- Okhrimenko, O. B.;
- Konoplev, B. G.;
- Svetlichnyi, A. M.;
- Lissotschenko, V. N.
Publication type:
Article
Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 209, doi. 10.15407/spqeo11.03.209
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Ivanov, V. N.;
- Kladko, V. P.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Milenin, V. V.;
- Sheremet, V. N.
Publication type:
Article
Development of high-stable contact systems to gallium nitride microwave diodes.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 4, p. 1
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Ivanov, V. N.;
- Kapitanchuk, L. M.;
- Kladko, V. P.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Kuchuk, A. V.;
- Lytvyn, O. S.;
- Milenin, V. V.;
- Sheremet, V. N.;
- Sveshnikov, Yu. N.
Publication type:
Article
Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 36
By:
- Streichuk, V. V.;
- Kladko, V. P.;
- Yefanov, O. M.;
- Kolomys, O. F.;
- Gudymenko, O. I.;
- Valakh, M. Ya.;
- Mazur, Yu. I.;
- Wang, Z. M.;
- Salamo, G. J.
Publication type:
Article
Investigation of superlattice structure parameters using quasi-forbidden reflections.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2003, v. 6, n. 3, p. 392, doi. 10.15407/spqeo6.03.392
By:
- Kladko, V. P.;
- Datsenko, L. I.;
- Korchovyi, A. A.;
- Machulin, V. F.;
- Lytvyn, P. M.;
- Shalimov, A. V.;
- Kuchuk, A. V.;
- Kogutyuk, P. P.
Publication type:
Article
Luminescence peculiarities of polyamide-6 α and γ forms.
Published in:
Applied Physics B: Lasers & Optics, 2021, v. 127, n. 4, p. 1, doi. 10.1007/s00340-021-07601-0
By:
- Vasnetsov, M. V.;
- Ponevchinsky, V. V.;
- Plutenko, D. O.;
- Klishevich, G. V.;
- Mitryaev, A. A.;
- Gudymenko, O. I.;
- Kladko, V. P.
Publication type:
Article
X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure.
Published in:
Semiconductors, 2010, v. 44, n. 9, p. 1199, doi. 10.1134/S1063782610090174
By:
- Strelchuk, V. V.;
- Kladko, V. P.;
- Avramenko, E. A.;
- Kolomys, O. F.;
- Safryuk, N. V.;
- Konakova, R. V.;
- Yavich, B. S.;
- Valakh, M. Ya.;
- Machulin, V. F.;
- Belyaev, A. E.
Publication type:
Article
Interphase interactions and the mechanism of current flow in Au-TiB x-AuGe- n-GaP ohmic contacts.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1428, doi. 10.1134/S1063782609110062
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Ivanov, V. N.;
- Kamalov, A. B.;
- Kapitanchuk, L. M.;
- Kladko, V. P.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Milenin, V. V.;
- Nasyrov, M. U.;
- Nevolin, P. V.
Publication type:
Article
Properties of GaN(SiC)-(Ti, Zr)B x contacts subjected to rapid thermal annealing.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1086, doi. 10.1134/S1063782609080223
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Ivanov, V. N.;
- Konakova, R. V.;
- Kladko, V. P.;
- Kudryk, Ya. Ya.;
- Lebedev, A. A.;
- Milenin, V. V.;
- Sheremet, V. N.
Publication type:
Article

Works by Kladko, V. P.

ZnO/SiC/Porous-Si/Si Heterostructure: Obtaining and Properties.

Nanosized Structure Formation by Trampoline Ion-Plasma Sputtering.

Synthesis, Luminescent and Structural Properties of the Cd<sub>1</sub> - <sub>x</sub>Cu<sub>x</sub>S and Cd<sub>1</sub> - <sub>x</sub>Zn<sub>x</sub>S Nanocrystals.

ELECTRONIC AND STRUCTURAL PROPERTIES OF Si–Gd–O ELECTRON EMITTER.

Simulation of X-Ray Diffraction Spectra for AlN/GaN Multiple Quantum Well Structures on AlN(0001) with Interface Roughness and Variation of Vertical Layers Thickness.

Microstructural Aspects of Nucleation and Growth of (In,Ga)As-GaAs(001) Islands with Low Indium Content.

Manganese Clusterization in ZnS:Mn, Mg Synthesized by Self-Propagating High-Temperature Synthesis.

On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering.

MAGNETRON-SPUTTERED NANOCOMPOSITE nc-TiC/a-C COATINGS.

Integrated dynamical phase-variation diffractometry of single crystals with defects of three and more types.

Structure and electrical resistance of the passivating ZnSe layer on Ge.

Peculiarities of specular infrared reflection spectra of ZnO-based ceramics.

Phase transition in vanadium oxide films formed by multistep deposition.

New possibilities for phase-variation structural diagnostics of multiparametrical monocrystalline systems with defects.

Influence of microwave radiation on relaxation processes in silicon carbide.

Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data.

Effect of electron-beam treatment of sensor glass substrates for SPR devices on their metrological characteristics.

The effect of ion implantation on structural damage in compositionally graded AlGaN layers.

Preparation and study of porous Si surfaces obtained using the electrochemical method.

Modeling of X-ray rocking curves for layers after two-stage ion-implantation.

Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient.

Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient.

Structural and electrical-physical properties of the ohmic contacts based on palladium to n<sup>+</sup>-n-n<sup>++</sup>-n<sup>+++</sup>-InP.

Ohmic contacts based on Pd to indium phosphide Gunn diodes.

Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios.

X-ray diffraction investigation of GaN layers on Si(111) and Al<sub>2</sub>O<sub>3</sub> (0001) substrates.

Influence of small miscuts on self-ordered growth of Ge nanoislands.

Modification of properties of the glass--Si<sub>3</sub>N<sub>4</sub>-Si-SiO<sub>2</sub> structure at laser treatment.

Heat-resistant barrier and ohmic contacts based on TiB<sub>x</sub> and ZrB<sub>x</sub> interstitial phases to microwave diode structures.

Development of high-stable contact systems to gallium nitride microwave diodes.

Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study.

Investigation of superlattice structure parameters using quasi-forbidden reflections.

Luminescence peculiarities of polyamide-6 α and γ forms.

X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure.

Interphase interactions and the mechanism of current flow in Au-TiB<sub> x</sub>-AuGe- n-GaP ohmic contacts.

Properties of GaN(SiC)-(Ti, Zr)B<sub> x </sub> contacts subjected to rapid thermal annealing.