Found: 14
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Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation.
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- Micromachines, 2021, v. 12, n. 4, p. 400, doi. 10.3390/mi12040400
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- Article
Polarization-Charge Inversion at Al2O3/GaN Interfaces through Post-Deposition Annealing.
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- Electronics (2079-9292), 2020, v. 9, n. 7, p. 1068, doi. 10.3390/electronics9071068
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- Article
Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO2 Thin-Film Transistor.
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- Electronics (2079-9292), 2020, v. 9, n. 3, p. 523, doi. 10.3390/electronics9030523
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- Article
Sol-Gel Processed Yttrium-Doped SnO2 Thin Film Transistors.
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- Electronics (2079-9292), 2020, v. 9, n. 2, p. 254, doi. 10.3390/electronics9020254
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- Article
Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route.
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- Electronics (2079-9292), 2019, v. 8, n. 9, p. 955, doi. 10.3390/electronics8090955
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- Article
Effect of Annealing Environment on the Performance of Sol–Gel-Processed ZrO2 RRAM.
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- Electronics (2079-9292), 2019, v. 8, n. 9, p. 947, doi. 10.3390/electronics8090947
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- Article
Improved Environment Stability of Y 2 O 3 RRAM Devices with Au Passivated Ag Top Electrodes.
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- Materials (1996-1944), 2022, v. 15, n. 19, p. 6859, doi. 10.3390/ma15196859
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- Article
Enhanced Switching Reliability of Sol–Gel-Processed Y 2 O 3 RRAM Devices Based on Y 2 O 3 Surface Roughness-Induced Local Electric Field.
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- Materials (1996-1944), 2022, v. 15, n. 5, p. 1943, doi. 10.3390/ma15051943
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- Article
Flexible Sol-Gel—Processed Y 2 O 3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process.
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- Materials (1996-1944), 2022, v. 15, n. 5, p. 1899, doi. 10.3390/ma15051899
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- Article
Improved Tunneling Property of p+Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment.
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- Inorganics, 2022, v. 10, n. 12, p. 228, doi. 10.3390/inorganics10120228
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- Article
UV/Ozone-Treated and Sol–Gel-Processed Y 2 O 3 Insulators Prepared Using Gelation-Delaying Precursors.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 9, p. 791, doi. 10.3390/nano14090791
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- Article
Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y 2 O 3 Random-Access Memory.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 6, p. 532, doi. 10.3390/nano14060532
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- Article
Sol–Gel-Processed Y 2 O 3 –Al 2 O 3 Mixed Oxide-Based Resistive Random-Access-Memory Devices.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 17, p. 2462, doi. 10.3390/nano13172462
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- Article
Sol–Gel-Processed Y 2 O 3 Multilevel Resistive Random-Access Memory Cells for Neural Networks.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 17, p. 2432, doi. 10.3390/nano13172432
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- Article