Very‐Low‐Temperature Integrated Complementary Graphene‐Barristor‐Based Inverter for Thin‐Film Transistor Applications.
- Published in:
- Annalen der Physik, 2018, v. 530, n. 10, p. N.PAG, doi. 10.1002/andp.201800224
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- Publication type:
- Article
Works by Kim, Kiyung
Results: 5
1
2
Demonstration of p-type stack-channel ternary logic device using scalable DNTT patterning process.
- Published in:
- Nano Convergence, 2023, v. 10, n. 1, p. 1, doi. 10.1186/s40580-023-00362-w
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- Publication type:
- Article
3
Operation Principles of ZnO/Al<sub>2</sub>O<sub>3</sub>‐AlDMP/ZnO Stacked‐Channel Ternary Thin‐Film Transistor.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100247
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- Publication type:
- Article
4
Dual-channel P-type ternary DNTT–graphene barristor.
- Published in:
- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-23669-w
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- Publication type:
- Article
5
Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors.
- Published in:
- Nanomaterials (2079-4991), 2020, v. 10, n. 6, p. 1186, doi. 10.3390/nano10061186
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- Publication type:
- Article