Works by Kim, Gil‐Ho

Results: 12

Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors.

Published in:

Advanced Materials, 2016, v. 28, n. 43, p. 9519, doi. 10.1002/adma.201601949

By:

Lee, Inyeal;
Rathi, Servin;
Lim, Dongsuk;
Li, Lijun;
Park, Jinwoo;
Lee, Yoontae;
Yi, Kyung Soo;
Dhakal, Krishna P.;
Kim, Jeongyong;
Lee, Changgu;
Lee, Gwan‐Hyoung;
Kim, Young Duck;
Hone, James;
Yun, Sun Jin;
Youn, Doo‐Hyeb;
Kim, Gil‐Ho

Publication type:

Article

Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple‐Gated Point Contact Device.

Published in:

Advanced Materials Technologies, 2024, v. 9, n. 12, p. 1, doi. 10.1002/admt.202302200

By:

Phan, Nhat Anh Nguyen;
Uddin, Inayat;
Le Thi, Hai Yen;
Aoki, Nobuyuki;
Kim, Hye Jung;
Watanabe, Kenji;
Taniguchi, Takashi;
Kim, Gil‐Ho

Publication type:

Article

Conversion of Charge Carrier Polarity in MoTe 2 Field Effect Transistor via Laser Doping.

Published in:

Nanomaterials (2079-4991), 2023, v. 13, n. 10, p. 1700, doi. 10.3390/nano13101700

By:

Kim, Hanul;
Uddin, Inayat;
Watanabe, Kenji;
Taniguchi, Takashi;
Whang, Dongmok;
Kim, Gil-Ho

Publication type:

Article

Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2/MoTe2 Heterostructures.

Published in:

Advanced Science, 2021, v. 8, n. 11, p. 1, doi. 10.1002/advs.202100102

By:

Kim, Jihoon;
Venkatesan, A.;
Kim, Hanul;
Kim, Yewon;
Whang, Dongmok;
Kim, Gil‐Ho

Publication type:

Article

Self‐Forming p–n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts.

Published in:

Small, 2022, v. 18, n. 46, p. 1, doi. 10.1002/smll.202204547

By:

Le Thi, Hai Yen;
Ngo, Tien Dat;
Phan, Nhat Anh Nguyen;
Yoo, Won Jong;
Watanabe, Kenji;
Taniguchi, Takashi;
Aoki, Nobuyuki;
Bird, Jonathan P.;
Kim, Gil‐Ho

Publication type:

Article

Enhanced Performance of WS2 Field‐Effect Transistor through Mono and Bilayer h‐BN Tunneling Contacts.

Published in:

Small, 2022, v. 18, n. 13, p. 1, doi. 10.1002/smll.202105753

By:

Phan, Nhat Anh Nguyen;
Noh, Hamin;
Kim, Jihoon;
Kim, Yewon;
Kim, Hanul;
Whang, Dongmok;
Aoki, Nobuyuki;
Watanabe, Kenji;
Taniguchi, Takashi;
Kim, Gil‐Ho

Publication type:

Article

Controlled Charge Polarity in WSe2 Field‐Effect Transistor Grown by Self‐Flux Method.

Published in:

Physica Status Solidi (B), 2025, v. 262, n. 7, p. 1, doi. 10.1002/pssb.202400436

By:

Le Thi, Hai Yen;
Uddin, Inayat;
Phan, Nhat Anh Nguyen;
Yoo, Won Jong;
Kim, Gil‐Ho

Publication type:

Article

Enhanced Photoresponse of VO2 Nanowires by Surface Doping with Au Nanoparticles via Dielectrophoresis Method.

Published in:

Physica Status Solidi (B), 2025, v. 262, n. 7, p. 1, doi. 10.1002/pssb.202400432

By:

Uddin, Inayat;
Thi, Hai Yen Le;
Phan, Nhat Anh Nguyen;
Kim, Hanul;
Yoo, Won Jong;
Khan, Muhammad Atif;
Kim, Gil‐Ho

Publication type:

Article

Nanocrystalline-Graphene-Tailored Hexagonal Boron Nitride Thin Films.

Published in:

Angewandte Chemie International Edition, 2014, v. 53, n. 43, p. 11493, doi. 10.1002/anie.201405762

By:

Lee, Kang Hyuck;
Shin, Hyeon‐Jin;
Kumar, Brijesh;
Kim, Han Sol;
Lee, Jinyeong;
Bhatia, Ravi;
Kim, Sang‐Hyeob;
Lee, In‐Yeal;
Lee, Hyo Sug;
Kim, Gil‐Ho;
Yoo, Ji‐Beom;
Choi, Jae‐Young;
Kim, Sang‐Woo

Publication type:

Article

Nanocrystalline-Graphene-Tailored Hexagonal Boron Nitride Thin Films.

Published in:

Angewandte Chemie, 2014, v. 126, n. 43, p. 11677, doi. 10.1002/ange.201405762

By:

Lee, Kang Hyuck;
Shin, Hyeon ‐ Jin;
Kumar, Brijesh;
Kim, Han Sol;
Lee, Jinyeong;
Bhatia, Ravi;
Kim, Sang ‐ Hyeob;
Lee, In ‐ Yeal;
Lee, Hyo Sug;
Kim, Gil ‐ Ho;
Yoo, Ji ‐ Beom;
Choi, Jae ‐ Young;
Kim, Sang ‐ Woo

Publication type:

Article

Schottky Diode with Asymmetric Metal Contacts on WS2.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100941

By:

Kim, Jihoon;
Venkatesan, A.;
Phan, Nhat Anh Nguyen;
Kim, Yewon;
Kim, Hanul;
Whang, Dongmok;
Kim, Gil‐Ho

Publication type:

Article

Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene.

Published in:

Nature Communications, 2023, v. 14, p. 1, doi. 10.1038/s41467-023-37292-4

By:

Nathawat, Jubin;
Mansaray, Ishiaka;
Sakanashi, Kohei;
Wada, Naoto;
Randle, Michael D.;
Yin, Shenchu;
He, Keke;
Arabchigavkani, Nargess;
Dixit, Ripudaman;
Barut, Bilal;
Zhao, Miao;
Ramamoorthy, Harihara;
Somphonsane, Ratchanok;
Kim, Gil-Ho;
Watanabe, Kenji;
Taniguchi, Takashi;
Aoki, Nobuyuki;
Han, Jong E.;
Bird, Jonathan P.

Publication type:

Article

Works by Kim, Gil‐Ho

Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe<sub>2</sub>/MoS<sub>2</sub> Heterostructure for Ambipolar Field-Effect Transistors.

Exploring Electrostatic Confinement Transport in MoS<sub>2</sub>/WSe<sub>2</sub> Heterostructure via Triple‐Gated Point Contact Device.

Conversion of Charge Carrier Polarity in MoTe 2 Field Effect Transistor via Laser Doping.

Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS<sub>2</sub>/MoTe<sub>2</sub> Heterostructures.

Self‐Forming p–n Junction Diode Realized with WSe<sub>2</sub> Surface and Edge Dual Contacts.

Enhanced Performance of WS<sub>2</sub> Field‐Effect Transistor through Mono and Bilayer h‐BN Tunneling Contacts.

Controlled Charge Polarity in WSe<sub>2</sub> Field‐Effect Transistor Grown by Self‐Flux Method.

Enhanced Photoresponse of VO<sub>2</sub> Nanowires by Surface Doping with Au Nanoparticles via Dielectrophoresis Method.

Nanocrystalline-Graphene-Tailored Hexagonal Boron Nitride Thin Films.

Nanocrystalline-Graphene-Tailored Hexagonal Boron Nitride Thin Films.

Schottky Diode with Asymmetric Metal Contacts on WS<sub>2</sub>.

Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene.