Works matching AU Khvostikov, V. A.

Results: 65

Optimization of Analysis Conditions by the Method of Inductively Coupled Plasma Mass Spectrometry with Laser Sampling.

Published in:

Inorganic Materials, 2018, v. 54, n. 14, p. 1371, doi. 10.1134/S0020168518140121

By:

Khvostikov, V. A.;
Karandashev, V. K.;
Burmii, Zh. P.

Publication type:

Article

Stable Highly Enriched Isotopes in Routine Analysis of Rocks, Soils, Grounds, and Sediments by ICP-MS.

Published in:

Inorganic Materials, 2017, v. 53, n. 14, p. 1432, doi. 10.1134/S0020168517140084

By:

Karandashev, V. K.;
Khvostikov, V. A.;
Nosenko, S. V.;
Burmii, Zh. P.

Publication type:

Article

Water analysis by inductively coupled plasma mass spectrometry.

Published in:

Inorganic Materials, 2016, v. 52, n. 14, p. 1391, doi. 10.1134/S0020168516140053

By:

Karandashev, V.;
Leikin, A.;
Khvostikov, V.;
Kutseva, N.;
Pirogova, S.

Publication type:

Article

Analysis of α-alumina samples by mass spectrometry with inductively coupled plasma and laser ablation.

Published in:

Inorganic Materials, 2015, v. 51, n. 14, p. 1410, doi. 10.1134/S0020168515140083

By:

Khvostikov, V.;
Karandashev, V.;
Burmii, Zh.

Publication type:

Article

Obtaining Anisotypic Heterostructures for a GaSb-Based Photovoltaic Converter Due to Solid-Phase Substitution Reactions.

Published in:

Technical Physics Letters, 2023, v. 49, n. 12, p. 253, doi. 10.1134/S1063785023900170

By:

Gagis, G. S.;
Kuchinskii, V. I.;
Kazantsev, D. Yu.;
Ber, B. Ya.;
Tokarev, M. V.;
Khvostikov, V. P.;
Nakhimovich, M. V.;
Vlasov, A. S.;
Vasil'ev, V. I.

Publication type:

Article

Characteristics of GaAsAlGaAs (SCH) lasers grown by low-temperature LPE technique.

Published in:

Crystal Research & Technology, 1989, v. 24, n. 9, p. 921, doi. 10.1002/crat.2170240914

By:

Diaz, P.;
Prutskij, T. A.;
Sanchez, M.;
Larionov, V. R.;
Khvostikov, V. P.

Publication type:

Article

Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1110, doi. 10.1134/S1063782619080116

By:

Khvostikov, V. P.;
Kalyuzhnyy, N. A.;
Mintairov, S. A.;
Potapovich, N. S.;
Sorokina, S. V.;
Shvarts, M. Z.

Publication type:

Article

AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation.

Published in:

Semiconductors, 2018, v. 52, n. 13, p. 1754, doi. 10.1134/S1063782618130080

By:

Khvostikov, V. P.;
Kalinovskiy, V. S.;
Sorokina, S. V.;
Shvarts, M. Z.;
Potapovich, N. S.;
Khvostikova, O. A.;
Vlasov, A. S.;
Andreev, V. M.

Publication type:

Article

GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm).

Published in:

Semiconductors, 2018, v. 52, n. 13, p. 1748, doi. 10.1134/S1063782618130079

By:

Khvostikov, V. P.;
Sorokina, S. V.;
Potapovich, N. S.;
Levin, R. V.;
Marichev, A. E.;
Timoshina, N. Kh.;
Pushnyi, B. V.

Publication type:

Article

Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE.

Published in:

Semiconductors, 2018, v. 52, n. 3, p. 366, doi. 10.1134/S1063782618030120

By:

Khvostikov, V. P.;
Sorokina, S. V.;
Potapovich, N. S.;
Khvostikova, O. A.;
Timoshina, N. Kh.;
Shvarts, M. Z.

Publication type:

Article

Laser (λ = 809 nm) power converter based on GaAs.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 645, doi. 10.1134/S1063782617050128

By:

Khvostikov, V.;
Sorokina, S.;
Potapovich, N.;
Khvostikova, O.;
Timoshina, N.

Publication type:

Article

GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics.

Published in:

Semiconductors, 2016, v. 50, n. 10, p. 1338, doi. 10.1134/S1063782616100146

By:

Khvostikov, V.;
Sorokina, S.;
Khvostikova, O.;
Levin, R.;
Pushnyi, B.;
Timoshina, N.;
Andreev, V.

Publication type:

Article

Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures.

Published in:

Semiconductors, 2016, v. 50, n. 9, p. 1220, doi. 10.1134/S1063782616090128

By:

Khvostikov, V.;
Kalyuzhnyy, N.;
Mintairov, S.;
Sorokina, S.;
Potapovich, N.;
Emelyanov, V.;
Timoshina, N.;
Andreev, V.

Publication type:

Article

Simulation of the characteristics of InGaAs/InP-based photovoltaic laser-power converters.

Published in:

Semiconductors, 2016, v. 50, n. 1, p. 132, doi. 10.1134/S1063782616010097

By:

Emelyanov, V.;
Sorokina, S.;
Khvostikov, V.;
Shvarts, M.

Publication type:

Article

Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm.

Published in:

Semiconductors, 2016, v. 50, n. 1, p. 125, doi. 10.1134/S1063782616010085

By:

Emelyanov, V.;
Mintairov, S.;
Sorokina, S.;
Khvostikov, V.;
Shvarts, M.

Publication type:

Article

GaSb-based photovoltaic laser-power converter for the wavelength λ ≈ 1550 nm.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1079, doi. 10.1134/S1063782615080114

By:

Khvostikov, V.;
Sorokina, S.;
Soldatenkov, F.;
Timoshina, N.

Publication type:

Article

Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 700, doi. 10.1134/S1063782615050139

By:

Levin, R.;
Marichev, A.;
Shvarts, M.;
Marukhina, E.;
Khvostikov, V.;
Pushnyi, B.;
Mizerov, M.;
Andreev, V.

Publication type:

Article

Temperature stability of contact systems for GaSb-based photovoltaic converters.

Published in:

Semiconductors, 2014, v. 48, n. 9, p. 1248, doi. 10.1134/S1063782614090115

By:

Khvostikov, V.;
Sorokina, S.;
Potapovich, N.;
Soldatenkov, F.;
Timoshina, N.

Publication type:

Article

High-efficiency GaSb photocells.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 307, doi. 10.1134/S1063782613020139

By:

Khvostikov, V.;
Sorokina, S.;
Khvostikova, O.;
Timoshina, N.;
Potapovich, N.;
Ber, B.;
Kazantsev, D.;
Andreev, V.

Publication type:

Article

A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters.

Published in:

Semiconductors, 2011, v. 45, n. 9, p. 1219, doi. 10.1134/S1063782611090193

By:

Soldatenkov, F.;
Sorokina, S.;
Timoshina, N.;
Khvostikov, V.;
Zadiranov, Y.;
Rastegaeva, M.;
Usikova, A.

Publication type:

Article

High-efficiency (η = 39.6%, AM 1.5D) cascade of photoconverters in solar splitting systems.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 792, doi. 10.1134/S106378261106011X

By:

Khvostikov, V.;
Vlasov, A.;
Sorokina, S.;
Potapovich, N.;
Timoshina, N.;
Shvarts, M.;
Andreev, V.

Publication type:

Article

Gas-fired thermophotovoltaic generator based on metallic emitters and GaSb cells.

Published in:

Semiconductors, 2010, v. 44, n. 9, p. 1244, doi. 10.1134/S1063782610090241

By:

Vlasov, A. S.;
Khvostikov, V. P.;
Sorokina, S. V.;
Potapovich, N. A.;
Kalinovskiy, V. S.;
Rakova, E. P.;
Andreev, V. M.;
Bobyl, A. V.;
Tereschenko, G. F.

Publication type:

Article

Thermophotovoltaic generators based on gallium antimonide.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 255, doi. 10.1134/S1063782610020223

By:

Khvostikov, V. P.;
Sorokina, S. V.;
Potapovich, N. S.;
Khvostikova, O. A.;
Malievskaya, A. V.;
Vlasov, A. S.;
Shvarts, M. Z.;
Timoshina, N. Kh.;
Andreev, V. M.

Publication type:

Article

Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 644, doi. 10.1134/S1063782609050200

By:

Andreev, V. M.;
Evstropov, V. V.;
Kalinovsky, V. S.;
Lantratov, V. M.;
Khvostikov, V. P.

Publication type:

Article

Solar cells based on gallium antimonide.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 668, doi. 10.1134/S1063782609050236

By:

Andreev, V. M.;
Sorokina, S. V.;
Timoshina, N. Kh.;
Khvostikov, V. P.;
Shvarts, M. Z.

Publication type:

Article

Examination of properties of epitaxial and bulk gallium antimonide.

Published in:

Semiconductors, 2008, v. 42, n. 10, p. 1179, doi. 10.1134/S1063782608100072

By:

Khvostikov, V.;
Sorokina, S.;
Potapovich, N.;
Khvostikova, O.;
Vlasov, A.;
Rakova, E.;
Andreev, V.

Publication type:

Article

The effect of damaging radiation ( p, e, γ) on photovoltaic and tunneling GaAs and GaSb p-n junctions.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 732, doi. 10.1134/S1063782607060231

By:

Andreev, V.;
Evstropov, V.;
Kalinovskiĭ, V.;
Lantratov, V.;
Khvostikov, V.

Publication type:

Article

High-efficiency (49%) and high-power photovoltaic cells based on gallium antimonide.

Published in:

Semiconductors, 2006, v. 40, n. 10, p. 1242, doi. 10.1134/S1063782606100216

By:

Khvostikov, V.;
Rastegaeva, M.;
Khvostikova, O.;
Sorokina, S.;
Malevskaya, A.;
Shvarts, M.;
Andreev, A.;
Davydov, D.;
Andreev, V.

Publication type:

Article

Thermophotovoltaic Cells for Conversion of Thermal Radiation and Concentrated Sunlight to Electricity.

Published in:

Semiconductors, 2004, v. 38, n. 8, p. 950, doi. 10.1134/1.1787118

By:

Khvostikov, V. P.;
Khvostikova, O. A.;
Gazaryan, P. Yu.;
Shvarts, M. Z.;
Rumyantsev, V. D.;
V. M. Andreev

Publication type:

Article

GaAs/Ge Heterostructure Photovoltaic Cells Fabricated by a Combination of MOCVD and Zinc Diffusion Techniques.

Published in:

Semiconductors, 2004, v. 38, n. 3, p. 355, doi. 10.1134/1.1682614

By:

Andreev, V. M.;
Khvostikov, V. P.;
Kalyuzhny&icaron;, N. A.;
Titkov, S. S.;
Khvostikova, O. A.;
Shvarts, M. Z.

Publication type:

Article

Ellipsometric Study of Ultrathin Al[sub x]Ga[sub 1 – ][sub x]As Layers.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 56, doi. 10.1134/1.1187946

By:

Sukhorukova, M. V.;
Skorokhodova, I. A.;
Khvostikov, V. P.

Publication type:

Article

High-efficiency AlGaAs/GaAs concentrator (2500 suns) solar cells.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 976, doi. 10.1134/1.1187816

By:

Andreev, V. M.;
Khvostikov, V. P.;
Larionov, V. R.;
Rumyantsev, V. D.;
Paleeva, E. V.;
Shvarts, M. Z.

Publication type:

Article

Photosensitivity of GaAlAs/GaAs heterophotoelements in linearly polarized light.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 689

By:

Rud’, V. Yu.;
Rud’, Yu. V.;
Khvostikov, V. P.

Publication type:

Article

Gradient Layers in a Four-Component Al–Ga–As–Sn System Growth by Liquid-Phase Epitaxy.

Published in:

Technical Physics, 2024, v. 69, n. 5, p. 1331, doi. 10.1134/S1063784224040327

By:

Potapovich, N. S.;
Khvostikov, V. P.;
Khvostikova, O. A.;
Vlasov, A. S.

Publication type:

Article

An Investigation of the Influence of Secondary Optical Elements on the Output Parameters of Photovoltaic Modules.

Published in:

Technical Physics, 2020, v. 65, n. 12, p. 2026, doi. 10.1134/S1063784220120221

By:

Potapovich, N. S.;
Davidyuk, N. Yu.;
Larionov, V. R.;
Khvostikov, V. P.

Publication type:

Article

Laser Power Converter Modules with a Wavelength of 809–850 nm.

Published in:

Technical Physics, 2020, v. 65, n. 10, p. 1690, doi. 10.1134/S1063784220100096

By:

Khvostikov, V. P.;
Kalyuzhnyy, N. A.;
Mintairov, S. A.;
Potapovich, N. S.;
Khvostikova, O. A.;
Sorokina, S. V.;
Shvarts, M. Z.

Publication type:

Article

Spectral-splitting concentrator photovoltaic modules based on AlGaAs/GaAs/GaSb and GaInP/InGaAs(P) solar cells.

Published in:

Technical Physics, 2013, v. 58, n. 7, p. 1034, doi. 10.1134/S106378421307027X

By:

Vlasov, A.;
Khvostikov, V.;
Karlina, L.;
Sorokina, S.;
Potapovich, N.;
Shvarts, M.;
Timoshina, N.;
Lantratov, V.;
Mintairov, S.;
Kalyuzhnyi, N.;
Marukhina, E.;
Andreev, V.

Publication type:

Article

Analysis of Silver and Gold Samples from the Borodino Treasure by Inductively Coupled Plasma Mass Spectrometry and Inductively Coupled Plasma Atomic Emission Spectrometry.

Published in:

Journal of Analytical Chemistry, 2019, v. 74, n. 11, p. 1104, doi. 10.1134/S1061934819110066

By:

Karandashev, V. K.;
Shishlina, N. I.;
Khvostikov, V. A.;
Kolchina, A. S.;
Burmii, Zh. P.;
Loboda, A. Yu.

Publication type:

Article

Control of the composition of lanthanum gallium silicate by laser ablation inductively coupled plasma mass spectrometry.

Published in:

Journal of Analytical Chemistry, 2014, v. 69, n. 5, p. 495, doi. 10.1134/S1061934814030083

By:

Khvostikov, V.;
Karandashev, V.;
Burmii, Zh.;
Buzanov, O.

Publication type:

Article

Determination of Mercury by Nondispersive Atomic Fluorescence Spectrometry.

Published in:

Journal of Analytical Chemistry, 2003, v. 58, n. 6, p. 519, doi. 10.1023/A:1024151832654

By:

Khvostikov, V. A.;
Telegin, G. F.;
Grazhulene, S. S.

Publication type:

Article

REE, Y, Sc, and Li Partition between Aluminosilicate and Aluminofluoride Melts, Depending on Pressure and Water Content in the Model Granite System.

Published in:

Geochemistry International, 2020, v. 58, n. 4, p. 391, doi. 10.1134/S0016702920040102

By:

Shchekina, T. I.;
Rusak, A. A.;
Alferyeva, Ya. O.;
Gramenitskiy, E. N.;
Kotelnikov, A. R.;
Zinovieva, N. G.;
Bychkov, A. Yu.;
Bychkova, Ya. V.;
Khvostikov, V. A.

Publication type:

Article

Phase Equilibria in the Al–Ga–As–Bi System at 900°C.

Published in:

Inorganic Materials, 2023, v. 59, n. 7, p. 691, doi. 10.1134/S0020168523070087

By:

Khvostikov, V. P.;
Khvostikova, O. A.;
Potapovich, N. S.;
Vlasov, A. S.

Publication type:

Article

Radiation-Geochemical Characteristics of Cryoconite Sediments on the Witte Glacier (Novaya Zemlya Archipelago).

Published in:

Oceanology (00014370), 2023, v. 63, n. 6, p. 891, doi. 10.1134/S0001437023320024

By:

Miroshnikov, A. Yu.;
Asadulin, En. E.;
Kudikov, A. V.;
Aliev, R. A.;
Fedulov, V. Yu.;
Khvostikov, V. A.;
Flint, M. V.

Publication type:

Article

Tritium Power Supply Sources Based on AlGaAs/GaAs Heterostructures.

Published in:

Technical Physics Letters, 2019, v. 45, n. 12, p. 1197, doi. 10.1134/S1063785019120083

By:

Khvostikov, V. P.;
Kalinovskii, V. S.;
Sorokina, S. V.;
Khvostikova, O. A.;
Andreev, V. M.

Publication type:

Article

A Study of Ohmic Contacts of Power Photovoltaic Converters.

Published in:

Technical Physics Letters, 2018, v. 44, n. 12, p. 1198, doi. 10.1134/S1063785019010140

By:

Malevskaya, A. V.;
Khvostikov, V. P.;
Soldatenkov, F. Yu.;
Khvostikova, O. A.;
Vlasov, A. S.;
Andreev, V. M.

Publication type:

Article

Photovoltaic Laser-Power Converters Based on LPE-Grown InP(GaAs)/InP Heterostructures.

Published in:

Technical Physics Letters, 2018, v. 44, n. 9, p. 820, doi. 10.1134/S1063785018090274

By:

Potapovich, N. S.;
Timoshina, N. Kh.;
Khvostikov, V. P.

Publication type:

Article

High-Efficiency AlGaAs/GaAs Photovoltaic Converters with Edge Input of Laser Light.

Published in:

Technical Physics Letters, 2018, v. 44, n. 9, p. 776, doi. 10.1134/S1063785018090079

By:

Khvostikov, V. P.;
Pokrovskii, P. V.;
Khvostikova, O. A.;
Pan’chak, A. N.;
Andreev, V. M.

Publication type:

Article

Obtaining nanodimensional layers of GaAsP solid solutions on GaAs by solid-state substitution reactions.

Published in:

Technical Physics Letters, 2013, v. 39, n. 5, p. 472, doi. 10.1134/S106378501305026X

By:

Vasil'ev, V.;
Gagis, G.;
Kuchinskii, V.;
Khvostikov, V.;
Marukhina, E.

Publication type:

Article

Generating broadband random Gaussian signals.

Published in:

Technical Physics Letters, 2010, v. 36, n. 8, p. 733, doi. 10.1134/S106378501008016X

By:

Zhilyaev, Yu. V.;
Il'inskaya, N. D.;
Inovenkov, A. N.;
Karpov, A. A.;
Kuznetsov, S. I.;
Orlova, T. A.;
Panteleev, V. N.;
Panyutin, E. A.;
Snytkina, S. A.;
Titkova, O. V.;
Fedorov, L. M.;
Khvostikov, V. P.

Publication type:

Article

Photoconverters Based on GaAs/Ge Heterostructures Grown by Low-Temperature Liquid Phase Epitaxy.

Published in:

Technical Physics Letters, 2003, v. 29, n. 7, p. 592, doi. 10.1134/1.1598559

By:

Khvostikov, V. P.;
Lunin, L. S.;
Ratushnyı, V. I.;
Oliva, É. V.;
Shvarts, M. Z.;
Khvostikova, O. A.

Publication type:

Article