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Effect of the Chloropentafluoroethane Additive in Chlorine-Containing Plasma on the Etching Rate and Etching-Profile Characteristics of Gallium Arsenide.
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- Semiconductors, 2021, v. 55, n. 11, p. 865, doi. 10.1134/S1063782621100171
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- Article
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (110) Sapphire.
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- Semiconductors, 2018, v. 52, n. 11, p. 1412, doi. 10.1134/S106378261811026X
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- Article
Segregation of Indium in InGaAs/GaAs Quantum Wells Grown by Vapor-Phase Epitaxy.
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- Semiconductors, 2003, v. 37, n. 2, p. 194, doi. 10.1134/1.1548664
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- Article
Control of Charge Transport Mode in the Schottky Barrier by δ-Doping: Calculation and Experiment for Al/GaAs.
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- Semiconductors, 2002, v. 36, n. 5, p. 505, doi. 10.1134/1.1478540
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- Article
A New Method for Determining the Sharpness of InGaAs/GaAs Heterojunctions by Auger Depth Profiling.
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- Technical Physics Letters, 2001, v. 27, n. 10, p. 868, doi. 10.1134/1.1414559
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- Article
Subnanometer Resolution in Depth Profiling Using Glancing Auger Electrons.
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- Technical Physics Letters, 2001, v. 27, n. 2, p. 114, doi. 10.1134/1.1352765
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- Article
Single-Crystalline GaAs, AlGaAs, and InGaAs Layers Grown by Metalorganic VPE on Porous GaAs Substrates.
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- Technical Physics Letters, 2000, v. 26, n. 4, p. 298, doi. 10.1134/1.1262823
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- Article
New approach to the analysis of negative magnetostriction in two-dimensional structures.
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- Semiconductors, 1999, v. 33, n. 8, p. 898, doi. 10.1134/1.1187920
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- Article
Deep states in silicon &-doped GaAs
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- Semiconductors, 1998, v. 32, n. 6, p. 659, doi. 10.1134/1.1187460
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- Article
Characterization of GaAs/InxGa1_xAS quantum-dot heterostructures by electrical and optical methods
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- Semiconductors, 1998, v. 32, n. 1, p. 99, doi. 10.1134/1.1187370
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- Article