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Numerical Study of Ethanol Suspension Combustion in Air.
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- Combustion, Explosion, & Shock Waves, 2023, v. 59, n. 2, p. 129, doi. 10.1134/S0010508223020028
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Outflow Kinetics of Chemical Solutions from Hydrophobized Nanostructural Silicon Compounds: Effect of Surface Tension.
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- Pharmaceutical Chemistry Journal, 2021, v. 55, n. 2, p. 194, doi. 10.1007/s11094-021-02383-3
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- Article
Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 3, p. 640, doi. 10.3390/nano11030640
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Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum Dots.
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- Semiconductors, 2020, v. 54, n. 9, p. 1141, doi. 10.1134/S1063782620090158
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Low-Temperature In-Induced Holes Formation in Native-SiOx/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires.
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- Materials (1996-1944), 2020, v. 13, n. 16, p. 3449, doi. 10.3390/ma13163449
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The Role of Physical Models in the Description of Luminescence Kinetics of Hybrid Nanowires.
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- Optics & Spectroscopy, 2020, v. 128, n. 1, p. 119, doi. 10.1134/S0030400X20010129
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Nonlinear Bleaching of InAs Nanowires in the Visible Range.
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- Optics & Spectroscopy, 2020, v. 128, n. 1, p. 125, doi. 10.1134/S0030400X20010130
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The Influence of the Polymer Matrix on Luminescent Properties of Compositions Doped with Boron Chelates.
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- Optics & Spectroscopy, 2019, v. 127, n. 3, p. 459, doi. 10.1134/S0030400X19090091
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Nonradiative Energy Transfer in Hybrid Nanostructures with Varied Dimensionality.
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- Semiconductors, 2019, v. 53, n. 9, p. 1258, doi. 10.1134/S1063782619090082
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- Article
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates.
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- Semiconductors, 2018, v. 52, n. 12, p. 1611, doi. 10.1134/S1063782618120047
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The Influence of Polyvinylpyrrolidone Molecular Weight on the Structure and the Spectral and Nonlinear Optical Properties of Composite Materials with CdS/ZnS Nanoparticles.
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- Optics & Spectroscopy, 2018, v. 125, n. 5, p. 640, doi. 10.1134/S0030400X18110103
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- Article
Photodynamics of Nonlinear Effects of Picosecond Laser Action on CdSe/ZnS QDs Colloidal Solutions.
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- Optics & Spectroscopy, 2018, v. 125, n. 5, p. 716, doi. 10.1134/S0030400X18110097
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Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon.
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- Semiconductors, 2018, v. 52, n. 11, p. 1416, doi. 10.1134/S1063782618110258
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Sharp-pointed susceptibility of ferromagnetic films with magnetic anisotropy inhomogeneous in thickness.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2018, v. 32, n. 17, p. -1, doi. 10.1142/S0217979218400349
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MBE Growth and Optical Properties of GaN, InN, and A<sup>3</sup> B<sup>5</sup> Nanowires on SiC/Si(111) Hybrid Substrate.
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- Advances in Condensed Matter Physics, 2018, p. 1, doi. 10.1155/2018/1040689
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Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources.
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- Semiconductors, 2018, v. 52, n. 4, p. 462, doi. 10.1134/S1063782618040103
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Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy.
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- Technical Physics Letters, 2018, v. 44, n. 2, p. 112, doi. 10.1134/S1063785018020116
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Luminescence of a Polymer Composite Doped with Boron Chelates. Mechanism of Luminescence Sensitization.
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- Optics & Spectroscopy, 2018, v. 124, n. 1, p. 68, doi. 10.1134/S0030400X18010095
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- Article
Piezoelectric Current Generation in Wurtzite GaAs Nanowires.
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- Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 1, p. 1, doi. 10.1002/pssr.201700358
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GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases.
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- Semiconductors, 2018, v. 52, n. 1, p. 1, doi. 10.1134/S1063782618010219
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Directional emission from beryllium doped GaAs/AlGaAs nanowires.
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- Technical Physics Letters, 2017, v. 43, n. 9, p. 811, doi. 10.1134/S1063785017090085
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Surface passivation of GaAs nanowires by the atomic layer deposition of AlN.
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- Semiconductors, 2016, v. 50, n. 12, p. 1619, doi. 10.1134/S1063782616120186
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Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon.
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- Semiconductors, 2016, v. 50, n. 11, p. 1421, doi. 10.1134/S1063782616110257
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Growth and properties of self-catalyzed (In,Mn)As nanowires.
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- Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 7, p. 554, doi. 10.1002/pssr.201600097
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Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range.
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- Semiconductors, 2016, v. 50, n. 5, p. 662, doi. 10.1134/S1063782616050262
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The formation of ZnO-based coatings from solutions containing high-molecular polyvinylpyrrolidone.
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- Technical Physics Letters, 2016, v. 42, n. 5, p. 468, doi. 10.1134/S1063785016050084
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The Effect of External Gaseous Environments on the Photoluminescence Intensity of Quantum-Dimensional Composite System.
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- Journal of Nanomaterials, 2015, p. 1, doi. 10.1155/2015/713837
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Photoelectric properties of an array of axial GaAs/AlGaAs nanowires.
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- Technical Physics Letters, 2015, v. 41, n. 5, p. 443, doi. 10.1134/S1063785015050077
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Optical limiting in solutions of InP and GaAs nanowires and hybrid systems based on such nanocrystals.
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- Technical Physics Letters, 2015, v. 41, n. 2, p. 120, doi. 10.1134/S1063785015020066
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Specific features of resonant nonlinear absorption in colloidal solutions of CdSe/ZnS quantum dots.
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- Optics & Spectroscopy, 2015, v. 118, n. 1, p. 94, doi. 10.1134/S0030400X15010099
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Photoinduced variation of the luminescent properties of PbS nanoparticle suspensions stabilized by polyvinylpyrrolidone.
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- Technical Physics Letters, 2015, v. 41, n. 1, p. 65, doi. 10.1134/S1063785015010198
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A hybrid system of GaAs whisker nanocrystals and PbS quantum dots on silicon substrate.
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- Technical Physics Letters, 2014, v. 40, n. 7, p. 558, doi. 10.1134/S1063785014070049
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Light quenching and dark states in colloidal solutions of semiconductor CdSe/ZnS quantum dots.
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- Optics & Spectroscopy, 2014, v. 116, n. 6, p. 941, doi. 10.1134/S0030400X14060058
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Study of the electrical properties of individual (Ga,Mn)As nanowires.
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- Semiconductors, 2014, v. 48, n. 3, p. 344, doi. 10.1134/S1063782614030075
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Composite system based on CdSe/ZnS quantum dots and GaAs nanowires.
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- Semiconductors, 2013, v. 47, n. 10, p. 1346, doi. 10.1134/S106378261310014X
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(In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties.
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- Semiconductors, 2013, v. 47, n. 8, p. 1037, doi. 10.1134/S1063782613080058
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The optical limitation effect and features of luminescence kinetics in hybrid nanosystems with CdSe/ZnS quantum dots and organic agents.
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- Optics & Spectroscopy, 2013, v. 114, n. 6, p. 880, doi. 10.1134/S0030400X13060040
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Photovoltaic properties of GaAs:Be nanowire arrays.
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- Semiconductors, 2013, v. 47, n. 6, p. 808, doi. 10.1134/S1063782613060079
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Formation of zones of an inverse energy cascade in an axisymmetric jet.
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- Doklady Physics, 2013, v. 58, n. 3, p. 107, doi. 10.1134/S1028335813030063
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Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix.
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- Semiconductors, 2012, v. 46, n. 11, p. 1460, doi. 10.1134/S1063782612110218
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Studying the formation of self-assembled (In,Mn)As quantum dots.
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- Technical Physics Letters, 2012, v. 38, n. 5, p. 460, doi. 10.1134/S1063785012050215
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Evolution of geodesic acoustic mode in ohmic H-mode in TUMAN-3M tokamak.
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- Technical Physics Letters, 2012, v. 38, n. 3, p. 268, doi. 10.1134/S1063785012030194
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Piezoelectric effect in GaAs nanowires.
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- Semiconductors, 2011, v. 45, n. 8, p. 1082, doi. 10.1134/S1063782611080215
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Liquid-crystal composites with controlled photoluminescence of CdSe/ZnS semiconductor quantum rods.
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- Optics & Spectroscopy, 2011, v. 110, n. 6, p. 897, doi. 10.1134/S0030400X11060063
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Fabrication of ordered GaAs nanowhiskers using electron-beam lithography.
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- Semiconductors, 2011, v. 45, n. 6, p. 822, doi. 10.1134/S1063782611060236
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LES Modeling of the inverse energy cascade in 3D turbulence.
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- Doklady Physics, 2011, v. 56, n. 4, p. 232, doi. 10.1134/S1028335811040045
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Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces.
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- Semiconductors, 2011, v. 45, n. 4, p. 431, doi. 10.1134/S1063782611040191
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Features of fluorescence of CdSe/ZnS semiconductor quantum rods in multicomponent solutions with pentylcyanobiphenyl.
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- Optics & Spectroscopy, 2010, v. 108, n. 6, p. 941, doi. 10.1134/S0030400X10060172
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Fluorescence of semiconductor nanorods in liquid-crystal composites.
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- Optics & Spectroscopy, 2008, v. 105, n. 2, p. 306, doi. 10.1134/S0030400X08080213
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Figures of merit and optimization of a VO2 microbolometer with strong electrothermal feedback.
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- Optical Engineering, 2008, v. 47, n. 7, p. 73603, doi. 10.1117/1.2956386
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