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A Decisive Role of Si and Ge Energy Levels in the Process of Pore Formation during Electrochemical Etching in Hydrofluoric Acid Solutions.
Published in:
Doklady Chemistry, 2020, v. 495, n. 1, p. 178, doi. 10.1134/S001250082011004X
By:
- Khort, A. M.;
- Yakovenko, A. G.;
- Dementeva, A. A.;
- Syrov, Yu. V.;
- Sigov, A. S.
Publication type:
Article
Features of Pore Nucleation in p-Si during Its Electrochemical Etching.
Published in:
Doklady Chemistry, 2019, v. 487, n. 1, p. 165, doi. 10.1134/S0012500819070012
By:
- Abramova, E. N.;
- Khort, A. M.;
- Yakovenko, A. G.;
- Syrov, Yu. V.;
- Tsygankov, V. N.;
- Slipchenko, E. A.;
- Shvets, V. I.
Publication type:
Article
Origin of Porous Silicon Photoluminescence Peaks in the Wavelength Range 460-700 nm.
Published in:
Doklady Chemistry, 2018, v. 481, n. 2, p. 166, doi. 10.1134/S0012500818080037
By:
- Abramova, E. N.;
- Khort, A. M.;
- Yakovenko, A. G.;
- Tsygankova, M. V.;
- Syrov, Yu. V.;
- Sorokin, T. A.;
- Shvets, V. I.
Publication type:
Article
Effect of thermal annealing and chemical treatment on the photolumineecenca of porous silicon
Published in:
Semiconductors, 1998, v. 32, n. 4, p. 443, doi. 10.1134/1.1187412
By:
- Shelonin, E. A.;
- Naidenkova, M. V.;
- Khort, A. M.;
- Yakovenko, A. G.;
- Gvelesiani, A. A.;
- Maronchuk, I. E.
Publication type:
Article
Influence of the Crystallographic Orientation of a Substrate on the Nucleation, Shape, and Evolution of Silicon Pores during its Electrochemical Etching in Hydrofluoric-Acid Solutions.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2018, v. 12, n. 2, p. 217, doi. 10.1134/S1027451018020027
By:
- Abramova, E. N.;
- Syrov, Yu. V.;
- Khort, A. M.;
- Yakovenko, A. G.;
- Prokhorov, D. I.
Publication type:
Article

Found: 5

A Decisive Role of Si and Ge Energy Levels in the Process of Pore Formation during Electrochemical Etching in Hydrofluoric Acid Solutions.

Features of Pore Nucleation in p-Si during Its Electrochemical Etching.

Origin of Porous Silicon Photoluminescence Peaks in the Wavelength Range 460-700 nm.

Effect of thermal annealing and chemical treatment on the photolumineecenca of porous silicon

Influence of the Crystallographic Orientation of a Substrate on the Nucleation, Shape, and Evolution of Silicon Pores during its Electrochemical Etching in Hydrofluoric-Acid Solutions.