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Investigation of the spatial distribution of silicon donor pairs in a GaAs quantum well.
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- JETP Letters, 2009, v. 90, n. 6, p. 449, doi. 10.1134/S0021364009180106
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- Article
Experimental observation of phase coherence in bilayer systems in the absence of a magnetic field.
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- JETP Letters, 2006, v. 84, n. 4, p. 209, doi. 10.1134/S0021364006160090
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- Article
Coulomb Oscillations of the Current through Spin-Nondegenerate p States of InAs Quantum Dots.
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- JETP Letters, 2005, v. 82, n. 8, p. 526, doi. 10.1134/1.2150874
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- Article
Magnetic-Field-Induced Singularity in the Tunneling Current Through an InAs Quantum Dot.
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- JETP Letters, 2005, v. 81, n. 6, p. 267, doi. 10.1134/1.1931013
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- Article
Spin Splitting of X-Valley-Related Donor Impurity States in an AlAs Barrier.
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- JETP Letters, 2004, v. 80, n. 2, p. 120, doi. 10.1134/1.1804221
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- Article
Anisotropy of Electronic Wave Functions in Self-Assembled InAs Dots Embedded in the Center of a GaAs Quantum Well Studied by Magnetotunneling Spectroscopy.
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- JETP Letters, 2001, v. 74, n. 1, p. 41, doi. 10.1134/1.1402204
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Suppression of the equilibrium tunneling current between slightly disordered two-dimensional electron systems with different electron concentrations in a high magnetic field.
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- JETP Letters, 1999, v. 69, n. 3, p. 255, doi. 10.1134/1.568014
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Tunneling resonances in structures with a two-step barrier.
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- JETP Letters, 1998, v. 67, n. 10, p. 863, doi. 10.1134/1.567762
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- Article
Detection of single photons by a resonant tunneling heterostructure with a quantum dot layer.
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- Journal of Experimental & Theoretical Physics, 2010, v. 111, n. 2, p. 269, doi. 10.1134/S1063776110080194
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- Article
Magnetic-field-induced Fermi-edge singularity in the tunneling current through an InAs self-assembled quantum dot.
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- Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 152, doi. 10.1134/S1063776107070333
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- Article
One-electron spin-dependent transport in split-gate structures containing self-organized InAs quantum dots.
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- Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 145, doi. 10.1134/S106377610707031X
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- Article
Observation of the low-temperature peak in the interlayer tunneling conductance in bilayer electron systems in the absence of the magnetic field.
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- Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 177, doi. 10.1134/S1063776107070394
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- Article
MAGNETIC FIELD DEPENDENCE OF MANY-BODY ENHANCED ELECTRON TUNNELLING THROUGH A QUANTUM DOT.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2009, v. 23, n. 12/13, p. 2974, doi. 10.1142/S0217979209062657
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- Article
Coulomb Correlation Gap at Magnetic Tunneling between Graphene Layers.
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- JETP Letters, 2023, v. 118, n. 6, p. 433, doi. 10.1134/S0021364023602464
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- Article
Strong Effect of the Wavelength of Light on Quantum Oscillations of the Photocurrent and Their Resonant Tunneling Nature in p–i–n GaAs/AlAs Heterostructures.
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- JETP Letters, 2021, v. 114, n. 6, p. 332, doi. 10.1134/S0021364021180089
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- Article
Effect of the Radiation Power on the Modification of Oscillations of the Photocurrent in Single-Barrier p–i–n GaAs/AlAs/GaAs Heterostructures with InAs Quantum Dots.
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- JETP Letters, 2021, v. 113, n. 9, p. 586, doi. 10.1134/S0021364021090113
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- Article
Tunneling in Graphene/h-BN/Graphene Heterostructures through Zero-Dimensional Levels of Defects in h-BN and Their Use as Probes to Measure the Density of States of Graphene.
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- JETP Letters, 2019, v. 109, n. 7, p. 482, doi. 10.1134/S0021364019070051
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- Article
Resonance Tunneling Phenomena in Two-Dimensional Multilayer van der Waals Crystalline Systems.
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- JETP Letters, 2018, v. 108, n. 9, p. 641, doi. 10.1134/S0021364018210142
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- Article
Observation of Spin and Valley Splitting of Landau Levels under Magnetic Tunneling in Graphene/Boron Nitride/Graphene Structures.
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- JETP Letters, 2018, v. 107, n. 4, p. 238, doi. 10.1134/S0021364018040069
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- Article
Resonant Tunneling of Electrons through Virtual Interference States Formed as a Result of Reflection from the Boundary of Strongly Doped Region of GaAs.
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- Journal of Experimental & Theoretical Physics, 2004, v. 99, n. 3, p. 530, doi. 10.1134/1.1809681
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Conductivity and persistent photoconductivity in GaAs epitaxial films containing single and double delta-doped layers.
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- Journal of Experimental & Theoretical Physics, 1998, v. 86, n. 2, p. 383, doi. 10.1134/1.558440
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- Article
Suppression of electron magnetotunneling between parallel two-dimensional GaAs/InAs electron systems by the correlation interaction.
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- Semiconductors, 2013, v. 47, n. 9, p. 1215, doi. 10.1134/S1063782613090091
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- Article
Spin Splitting of the X-valley Donor Impurity States in AlAs Barriers and the Spatial Distribution of the Probability Density of Their Wave Functions.
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- Semiconductors, 2005, v. 39, n. 10, p. 1162, doi. 10.1134/1.2085264
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- Article
Effective Mass Anisotropy of Γ Electrons in a GaAs/(AlGa)As Quantum Well.
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- Semiconductors, 2005, v. 39, n. 4, p. 421, doi. 10.1134/1.1900256
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- Article
Resonant Γ–X Tunneling in Single-Barrier GaAs/AlAs/GaAs Heterostructures.
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- Semiconductors, 2004, v. 38, n. 4, p. 419, doi. 10.1134/1.1734669
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- Article
Zero Bias Anomalies of Transport Characteristics of Single-Barrier GaAs/AlAs/GaAs Heterostructures as a Result of Resonance Tunneling between Parallel Two-Dimensional Electron Gases and Suppression of Resonance Tunneling in a Magnetic Field as a...
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- Semiconductors, 2003, v. 37, n. 6, p. 692, doi. 10.1134/1.1582537
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- Article
Tunneling via Impurity States Related to the X Valley in a Thin AlAs Barrier.
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- Semiconductors, 2001, v. 35, n. 2, p. 199, doi. 10.1134/1.1349932
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- Article
Electron tunneling between two-dimensional electronic systems in a heterostructure with a single doped barrier
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- Semiconductors, 1998, v. 32, n. 5, p. 539, doi. 10.1134/1.1187434
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- Article
ENHANCEMENT OF REDUCED GRAPHENE OXIDE BOLOMETRIC PHOTORESPONSE VIA ADDITION OF GRAPHENE QUANTUM DOTS.
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- Surface Review & Letters, 2021, v. 28, n. 8, p. 1, doi. 10.1142/S0218625X21400114
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- Article
Manifestations of Resonant-Tunneling Processes and Random Potential Fluctuations with the Participation of Quantum-Dot Levels in the Photocurrent Relaxation of p–i–n GaAs/AlAs Heterostructures.
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- Semiconductors, 2021, v. 55, n. 11, p. 835, doi. 10.1134/S1063782621100122
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- Article
On the Role of Structural Imperfections of Graphene in Resonant Tunneling through Localized States in the h-BN Barrier of van-der-Waals Heterostructures.
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- Semiconductors, 2020, v. 54, n. 3, p. 291, doi. 10.1134/S1063782620030082
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Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures.
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- Semiconductors, 2019, v. 53, n. 8, p. 1038, doi. 10.1134/S1063782619080104
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- Article
Quantum Oscillations of Photoconductivity Relaxation in p-i-n GaAs/InAs/AlAs Heterodiodes.
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- Semiconductors, 2018, v. 52, n. 6, p. 739, doi. 10.1134/S1063782618060088
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- Article