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Coulomb Contribution to Shockley–Read–Hall Recombination.
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- Materials (1996-1944), 2024, v. 17, n. 18, p. 4581, doi. 10.3390/ma17184581
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- Article
Polar GaN Surfaces under Gallium Rich Conditions: Revised Thermodynamic Insights from Ab Initio Calculations.
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- Materials (1996-1944), 2023, v. 16, n. 17, p. 5982, doi. 10.3390/ma16175982
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- Article
Polarization Doping in a GaN-InN System—Ab Initio Simulation.
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- Materials (1996-1944), 2023, v. 16, n. 3, p. 1227, doi. 10.3390/ma16031227
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- Article
Role of Metallic Adlayer in Limiting Ge Incorporation into GaN.
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- Materials (1996-1944), 2022, v. 15, n. 17, p. 5929, doi. 10.3390/ma15175929
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- Article
Modeling of the Point Defect Migration across the AlN/GaN Interfaces—Ab Initio Study.
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- Materials (1996-1944), 2022, v. 15, n. 2, p. 478, doi. 10.3390/ma15020478
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- Article
Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells.
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- Materials (1996-1944), 2021, v. 14, n. 17, p. 4935, doi. 10.3390/ma14174935
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- Article
CH4 Adsorption Probability on GaN(0001) and (000−1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films.
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- Materials (1996-1944), 2019, v. 12, n. 6, p. 972, doi. 10.3390/ma12060972
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- Article
DFT Modeling of Unintentional Oxygen Incorporation Enhanced by Magnesium in GaN(0001) and AlN(0001) Growth Surfaces during Metal‐Organic Vapor‐Phase Epitaxy.
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- Physica Status Solidi (B), 2022, v. 259, n. 6, p. 1, doi. 10.1002/pssb.202100430
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- Article