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A study of isotype photosensitive heterostructures (intrinsic oxide)- n-InSe prepared by long-term thermal oxidation.
- Published in:
- Semiconductors, 2007, v. 41, n. 9, p. 1056, doi. 10.1134/S1063782607090096
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- Article
Oxide–p-InSe Heterostructures with Improved Photoelectric Characteristics.
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- Semiconductors, 2004, v. 38, n. 4, p. 402, doi. 10.1134/1.1734666
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- Article
Oxide–p-InSe Heterojunctions on (110)-Oriented InSe Crystal Substrates.
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- Technical Physics Letters, 2001, v. 27, n. 5, p. 424, doi. 10.1134/1.1376772
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- Article
Photoelectric Properties of the n-SnSSe–p-InSe Heterojunctions.
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- Technical Physics Letters, 2000, v. 26, n. 9, p. 754, doi. 10.1134/1.1315484
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- Article
p-GaSe-n-Recrystallized InSe Heterojunctions.
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- Technical Physics Letters, 2000, v. 26, n. 1, p. 54, doi. 10.1134/1.1262739
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- Article
Influence of self-oxide formation regimes on the properties of oxide–p-InSe heterojunctions.
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- Technical Physics Letters, 1999, v. 25, n. 7, p. 520, doi. 10.1134/1.1262539
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- Article
Gallium telluride heterojunctions.
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- Technical Physics Letters, 1999, v. 25, n. 1, p. 54, doi. 10.1134/1.1262353
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- Article
Photopleochroism of oxide–p-InSe diode structures.
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- Technical Physics Letters, 1997, v. 23, n. 5, p. 377, doi. 10.1134/1.1261674
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- Article