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First-principles calculations for mechanical and electronic features of strained GaP nanowires.
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- International Journal of Modern Physics C: Computational Physics & Physical Computation, 2017, v. 28, n. 3, p. -1, doi. 10.1142/S0129183117500395
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First-principles calculations for the structural and electronic properties of GaAsP nanowires.
- Published in:
- International Journal of Modern Physics C: Computational Physics & Physical Computation, 2016, v. 27, n. 3, p. -1, doi. 10.1142/S0129183116500352
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- Article
ADSORPTION SITES OF THE PRODUCTS OF GeH<sub>4</sub> ON ASYMMETRIC Si(100)(2×1) SURFACE.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2004, v. 18, n. 8, p. 1191
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Structural stability and electronic properties of different cross-sectional unstrained and rectangular cross-sectional strained GaP nanowires.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2019, v. 33, n. 4, p. N.PAG, doi. 10.1142/S0217979219500061
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- Article
The electronic band structure of InN, InAs and InSb compounds.
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- Journal of Materials Science, 2008, v. 43, n. 8, p. 2935, doi. 10.1007/s10853-007-1794-4
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- Article