Works by Karavanskiı, V. A.

Results: 12

Anomalous Polarization of Raman Scattering by Transverse and Longitudinal Phonons in Porous Doped GaAs.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 949, doi. 10.1134/1.1393033

By:

Denisov, V. N.;
Mavrin, B. N.;
Karavanskiı, V. A.

Publication type:

Article

Ion implantation of porous gallium phosphide.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 886, doi. 10.1134/1.1187478

By:

Ushakov, V. V.;
Dravin, V. A.;
Mel’nik, N. N.;
Zavaritskaya, T. V.;
Loıko, N. N.;
Karavanskiı, V. A.;
Konstantinova, E. A.;
Timoshenko, V. Yu.

Publication type:

Article

Light absorption and photoluminescence of porous silicon.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 896, doi. 10.1134/1.1187480

By:

Obraztsov, A. N.;
Karavanskiı, V. A.;
Okushi, H.;
Watanabe, H.

Publication type:

Article

The structure of porous gallium phosphide.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 213, doi. 10.1134/1.1187548

By:

Zavaritskaya, T. N.;
Kvit, A. V.;
Mel’nik, N. N.;
Karavanskiı, V. A.

Publication type:

Article

Radiation hardness of porous silicon.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 966, doi. 10.1134/1.1187143

By:

Ushakov, V. V.;
Dravin, V. A.;
Mel’nik, N. N.;
Karavanskiı, V. A.;
Konstantinova, E. A.;
Timoshenko, V. Yu.

Publication type:

Article

Characterization of the Structure of Porous Germanium Layers by High-Resolution X-ray Diffractometry.

Published in:

Crystallography Reports, 2003, v. 48, n. 2, p. 326, doi. 10.1134/1.1564216

By:

Lomov, A. A.;
Bushuev, V. A.;
Karavanskiı, V. A.;
Bayliss, S.

Publication type:

Article

Structure of Porous Surface Layers of Single-Crystal GaAs(001) Wafers from Data of X-ray Diffractometry and Reflectometry.

Published in:

Crystallography Reports, 2002, v. 47, n. 6, p. 1051, doi. 10.1134/1.1523526

By:

Lomov, A. A.;
Karavanskiı, V. A.;
Imamov, R. M.;
Sutyrin, A. G.;
Dravin, V. A.

Publication type:

Article

Study of Surface and Interface Roughnesses in Porous Silicon by High-Resolution X-ray Methods.

Published in:

Crystallography Reports, 2000, v. 45, n. 5, p. 842, doi. 10.1134/1.1312933

By:

Lomov, A. A.;
Bushuev, V. A.;
Karavanskiı, V. A.

Publication type:

Article

Photophysical Processes Stimulated in Nanoporous Silicon by High-Power Laser Radiation.

Published in:

Journal of Experimental & Theoretical Physics, 2000, v. 90, n. 1, p. 121, doi. 10.1134/1.559082

By:

Bykovskiı, Yu. A.;
Karavanskiı, V. A.;
Kotkovskiı, G. E.;
Kuznetsov, M. B.;
Chistyakov, A. A.;
Lomov, A. A.;
Gavrilov, S. A.

Publication type:

Article

Preparation and Study of the Optical Properties of Porous Graphite.

Published in:

JETP Letters, 2001, v. 74, n. 3, p. 186, doi. 10.1134/1.1410227

By:

Karavanskiı, V. A.;
Mel’nik, N. N.;
Zavaritskaya, T. N.

Publication type:

Article

Resonant Radiationless Excitation Transfer to I[sub 2] Molecules Sorbed in Pores of Porous Silicon.

Published in:

JETP Letters, 2001, v. 73, n. 10, p. 510, doi. 10.1134/1.1387516

By:

Zakharchenko, K. V.;
Karavanskiı, V. A.;
Kotkovskiı, G. E.;
Kuznetsov, M. B.;
Chistyakov, A. A.

Publication type:

Article

Observation of Coherent Phonon States in Porous Silicon Films.

Published in:

JETP Letters, 2000, v. 71, n. 7, p. 298, doi. 10.1134/1.568338

By:

Dobryakov, A. L.;
Karavanskiı, V. A.;
Kovalenko, S. A.;
Merkulova, S. P.;
Lozovik, Yu. E.

Publication type:

Article